一氮化物

Acid deposition is a process that begins with the emission of SO^ or N0^.

酸性物质是一种以硫化物或氮化物的排放为过程而形成的物质。

Azide:a chemical compound that contains the group N.

叠氮化物：一种化合物，包含基团N。

A compound containing nitrogen with another more electropositive element, such as phosphorus or a metal .

氮化物一种含有氮和另外一种更具正电性元素的化合物，如磷或金属的化合物

The present invention relates to a nitride micro light emitting diode with high brightness and a method of manufacturing the same.

本发明涉及一种高亮度的氮化物微发光二极管及其制造方法。

It Was found that a complex ordered carbonitride is formed on hot-rolling and continuous cooling by the precipitation of Nb and V together with C and N in which the contents of Nb and V are changeable.

利用透射扫描电镜和能谱仪对Nb-V微合金化钢中Nb和V析出相进行了研究，发现Nb和V在高温形变和连续冷却中，与C，N形成一种复杂的有序碳氮化物，其中Nb与V的含量是可变的，其浓度比值C_(Nb/C_V随着析出颗粒尺寸的减小而递减，化学式可写成C_(1-x，N_(1-y)。

In order to find biologically active urea compounds,seven new N-[5-(3-pyridyl)-1,3,4-thiadiazol-2-yl]-N'- urea derivatives were synthesized by the reaction of 2-amino-5-(3-pyridyl)-1,3,4-thiadiazole with aroylazides,which were prepared starting from carboxylic acids,ethyl chloroformate and sodium azide by one-pot procedure.

为了寻找高生物活性的脲类化合物，通过2-氨基-5-(3-吡啶基)-1，3，4-噻二唑与酰基叠氮化物反应，设计合成了7个新的N-[5-(3-吡啶基)-1，3，4-噻二唑-2-基]-N'-取代苯基脲，其中芳酰基叠氮化物是以芳酸、氯甲酸乙酯、叠氮化钠为起始原料采用&一锅法&所制得。

A chemical vapor depositionmethod for depositing high quality conformal tantalum/tantalum nitridebilayer films from inorganic tantalum pentahalide(TaX5)precursors and nitrogen is described.

描述了一种从无机五卤化钽(TaX 5 )前体和氮气中沉积形成高质量的保形钽/钽氮化物双层膜的化学气相沉积法。

Recently, ''click'' reaction has been regarded as a simple and versatile coupling strategy for the functionalization of nanoparticles.12 It is a green and ecient coupling approach, utilizing the copper-catalyzed 1,2,3-triazole formation between azides and terminal acetylenes.

近来，&点击&反应已经被看作一种用于纳米粒子功能化的简单而万能的偶联策略。[12] 它是一种绿色而有效的偶联方法，利用叠氮化物和端乙炔之间的铜催化1，2，3三氮唑的形成。

A radiation hardened N channel Si power device——VDMNOSFET (Vertical Double Diffused Metal Nitride Oxide Semiconductor Field Effect Transistor) is fabricated by using a double layer (Si 3N 4 SiO 2) gate dielectric and a self aligned heavily doped shallow P + region.

采用 Si3N4- Si O2 双层栅介质及自对准重掺杂浅结 P+区研制出了一种抗辐射加固功率器件—— VDMNOS-FET (垂直双扩散金属-氮化物-氧化物-半导体场效应晶体管)。

Another good review article on the wide bandgap nitrides.

另一篇不错的宽能隙氮化物系列的论文。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。