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If a transformer receives energy at a low voltage and delivers it at a higher voltage ,it is called a step-up transformers.

如果得到能源变压器在低电压，并提供它在更高的电压，这是所谓的升压变压器。

In single stage power factor correction converters, the voltage on the storage capacitor is not controlled, its wide voltage range has detrimental effect on the circuit performance.

中文摘要：在单级功率因数校正变换器中，不能控制储能电容电压，而且电压变化很大降低了电路的性能。

The realization of AVC needs coordination and unification of subarea control in the same voltage grade and interlayer control of different voltage grade.

AVC的实现应是同一电压等级下的分区控制及不同电压等级间层间控制的协调、统一。

The dynamic equation describing the relationship between surface charge density and voltage is established. The constants of voltage／field strength A and B are introduced.

建立了电压与绝缘子表面电荷分布的动态方程，分析了直流电压作用下表面电荷的积聚过程，并给出了绝缘子表面电荷动态分布的近似表达式。

Measure character: Frequency limits: CH1:dResolution of C ～ 225MHz frequency: 10 / second time-interval resolution : N/A measures speed: Can amount to 200 times measure / the second mixes in limits of the voltage on GPIB sensitivity : DC ～ 100MHz: 200MHz of ～ of 5Vac+dc 100MHz of 20mVrms ～±: 225MHz of ～ of 5Vac+dc 200MHz of 30mVrms ～±: Input of 5Vac+dc of 40mVrms ～± adjusts:(CH1 chooses) impedance, coupling: 1M Ω or 50 Ω, ac or Dc are low connect filter: 100kHz, but switch attenuation:× 1 or reference of × 10 exterior time base inputs: 1, 5, 10MHz sparks: CH1, to rising / drop the edge sparks, the percentage that uses signal n or absolutely voltage install n, setting sensitivity mixes to low, medium or tall gate start: Automatic, the hand is moved (setting gate time or resolution digit); Exterior, defer interface: Standard GP-IB(IEEE 488.1 and 488.2), take; of SCPI compatible language to say RS-232 power source only: 10 ％ of 100-120VAC ±, 50, 60 or 10 ％ of 400Hz ± 10 ％ of 220-240VAC ±, 50 or 10 ％ of 60Hz ± are suttle: 3kg dimension: 348.3mm of × of 212.6 × 88.5H

测量特征：频率规模：CH1：dc～225MHz 频率分辨率：10位/秒时候距离分辨率：N/A 测量速度：可达200次测量/秒在GPIB上电压规模和灵敏度： DC～100MHz： 20mVrms～±5Vac+dc 100MHz～200MHz：30mVrms～±5Vac+dc 200MHz～225MHz：40mVrms～±5Vac+dc 输入调节：(CH1选择)阻抗，耦合： 1MΩ或50Ω，ac或dc 低通滤波器： 100kHz，可切换衰减：×1或×10 外部时基参考输入： 1，5，10MHz 触发： CH1，对回升/回升沿触发，用信号电平的百分数或相对电压设置电平，设置灵敏度至低、中或高闸门和启动：主动，手动(设置闸门时候或分辨率位数)；外部，延迟接口：尺度GP-IB(IEEE 488.1和488.2)，带SCPI兼容说话；只讲RS-232 电源：100-120VAC±10％，50，60或400Hz±10％ 220-240VAC±10％，50或60Hz±10％净重：3kg 尺寸：212.6×88.5×348.3mm

By controlling the bias voltage sweep in certain fast sweep rate range,a novel current peak is observed in the current-voltage characteristics measured on individual GeSi quantum dots.

在量子点的I-V特性曲线中，有明显的电流峰产生，对应的载流子充放电过程速度极快，只能在快速的扫描过程中才能捕获到，因此在一般常规的稳态扫描中观察不到。

The numerical results revealed the following phenomena: For the linear sweep voltage, the field-enhanced effect retards the progress of the MOS capacitance, and the lower voltage sweep rate, the larger influence of fieldenhanced effect.

数值分析首次揭示了下述现象：对于线性电压扫描作用下MOS结构的电容瞬态特性：电场增强产生效应阻碍着MOS结构电容的下降，这种作用在较低的电压扫描率下更明显。

After hot carrier stress, devices were evaluated by using positive bias temperature instability test. With different trends in the time evolution of threshold voltage shift and sub-threshold swing degradation, it is found that electron trapping in the HfO2 is the major reason for the threshold voltage variation. Compared to control devices, devices with fluorine and nitrogen exhibit good passivation at the interface. Devices were measured at an elevated temperature.

在热载子效应后，接著进行正偏压温度不稳定的量测方法，从随时间变动的临界电压以及次临界摆幅，发现临界电压的变动趋势与临界摆幅变动趋势不符合，表示二氧化铪的原生缺陷补捉是造成临界电压变动的主因，而临界摆幅的变动也可得知有氟，氮处理元件具有比较好的介面可靠度。

Furthermore, the threshold voltage and subthreshold swing shift of a-Si:H TFT under DC operation is discussed and measured.DC voltage stress causes a constant Vt shift ,but subthreshold swing isn't change much.

另外，考量元件稳定度的加速实验，尝试分析偏压时间对於临界电压偏移量以及次临界摆幅的影响，结果显示长时间的直流偏压只会对临界电压偏移量造成影响，对於次临界摆幅的影响很小。

It is also a necessary accessory for high-voltage switch box, circular circuit cabinet, high/low voltage top-loading transformer substation

这也是配套使用高压开关箱、电路内阁通告，高/低电压最高负荷变电所

The work of this paper is as follows: 1. Looking back the progressing history of the linear motor, introducing the features of the elevator driven by linear induction motor, radicating the topic of this paper "the digital frequency variable control of the elevator bi-side direct driven by linear induction motor". The research of this paper covers the conventional VVVF control, space vector based VVVF control, vector control and DTC.

本文主要开展了以下几个方面的工作： 1 回顾了直线电机发展历史，电机的驱动技术演变，特别是针对直线电机的驱动，简要介绍了直线感应电机驱动电梯的优点和不同结构类型，对传统的v／f控制，基于空间矢量法的v／f控制，矢量控制，和基于电压空间矢量的直接转矩控制进行了比较，确立了本课题的研究主题：直线感应电机双边直推式驱动电梯的全数字变频控制。

The article combines with the treatment of a superficial civil air defense work to introduce how the grouting method to improve the performance of the backfill soil.

文章从治理漂浮人防工事的角度提出了注浆技术在改善回填土性质方面的应用，并详细阐述了注浆技术的施工流程。