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The research for the mechanism of field plate operation in this paper can offer some theoretic guidance for applying field plate in high voltage MOSFET. Measuring for layout design rule has practical directions to the layout design of high voltage MOSFET and provides basis to setting idiographic parameters of parameterized cells in device model library.

本文对场板工作机理的研究，对高压MOSFET中场板结构的应用具有一定的理论指导作用；版图设计规则的测量对高压MOSFET版图设计具有实际性的指导意义，并为器件模型库中参数化单元的具体参数设定提供了依据。

Insulation Resistance meauring: rated voltage of 100 V and above, use of 1000 V Megohmmeter; rated voltage below 100 V, use 500 V Megohmmeter.

绝缘电阻的测定：额定电压为100V及以上者，使用1000V兆欧表；额定电压为100V以下者，使用500V兆欧表。

AC voltage endurance test of secondary circuit:voltage for test is 1000V,when insulation resistance of circuit is above 10M,we can use megohmmeter of 2500V for replacing,test time is 1 minute,take measures to prevent overvoltage and dielectric puncture during test.

3.10.1.3 二次回路交流耐压试验：试验电压为 1000V，当回路绝缘电阻在 10M 以上时，可用 2500V 兆欧表代替，试验时间为 1min，试验时应采取措施防止过压击穿。

A threshold voltage of the first memory cell is higher than a first verifying voltage.

第一存储单元的阈值电压高于第一校验电压。

A threshold voltage of the second memory cell is higher than a first verifying voltage.

第二存储单元的阈值电压高于第一校验电压。

The divider consists of a pulsed resistor voltage divider and a high voltage mica capacitor.

高储能密度的脉冲高压电容器的放电特性，对于脉冲功率源系统的电特性影响很大。

In reality, we fabricate the metal field plate termination structure and its breakdown voltage is 300 V. After adding poly resistor, the breakdown voltage of the termination structure is 2000V and leakage current is in microampere.

实际制作出的单一金属场板终端结构可耐压约300伏特，加入了复晶矽电阻，耐压可提升至2000伏特，漏电流约在微安培等级。

Is 1000 ℃ diagraph scopes to 0~, adoption thermocouple, such as Nie chrome thermocouple, cent degree is an EU, it outputs the signal as 0~41.32 mVs, is changed to send a machine by milli- Fu, output a 0~10 mas, then convert into the 0~5 V electric voltage signal after the electric current-electric voltage transformation electric circuit.

对于0~1000℃的测量范围，采用热电偶，如镍铬热电偶，分度号为EU，其输出信号为0~41.32mV，经毫伏变送器，输出0~10mA，然后再经过电流——电压变换电路转换为0~5V电压信号。

The voltage across RL1 is the picoammeter voltage burden, normally less than one millivolt, so the resulting current will be quite small.

RL1上的电压为皮安计的输入端压降，通常小于 1mV，所以产生的电流是相当小的。

Disturbing Voltage is estimated equivalently according to the measurement of the typical numerical values between the leakage voltage and leakage resistance from the equipment of the oscillograph and the millivoltmeter based on the working frequency disturbance model.

在工频干扰模型基础上，通过对示波器和毫伏表的电源变压器漏电阻和等效漏电压典型值的测量，估算了工频干扰电压的幅度，从而说明电子测量系统各设备间共地连接的必要性，并介绍了共地方式在交流电桥等实践中的应用实例。

Nowadays, most of research are to build a transmutative Petri Nets through adding controlling place sets, controlling arc sets and controlling policy to the basic Petri Nets, while the Controlled Petri Nets could be used to argue many controlling theory problems conveniently and to induce many logically and physically supervisory and solve the Event Feedback Controlling Problems and State Feedback Controlling Problem in DEDS supervisory theory.

目前大多数的研究表现为在变形后的受控Petri网基础上，利用各种方法求得各种逻辑型、结构型控制器，解决DEDS监控理论中的事件反馈控制问题与状态反馈控制问题。

On one hand, there are discussions with the works council and union about extension of short time working up to the end of September.

一方面，有讨论，工程理事会和联盟关于延长工作时间短至9月底。