查询词典 voltage barrier

This system to dc voltage source as the core, mainly AT89S52 SCM, through the keyboard controller to install dc power supply output voltage, setting stepping class can reach.01v output voltage, the range of 0-9.9 V, the maximum current 330mA for, and can show the actual pipe by digital output voltage values.

论文摘要：本系统以直流电压源为核心，AT89S52单片机为主控制器，通过键盘来设置直流电源的输出电压，设置步进等级可达0.1V，输出电压范围为0—9.9V，最大电流为330mA，并可由液晶屏显示实际输出电压值。系统有过流保护电路，当输出电流过大时功率管自动截至，而且有红色指示灯发出警报。

This system to dc voltage source as the core, mainly AT89S52 SCM, through the keyboard controller to install dc power supply output voltage, setting stepping class can reach.01v output voltage, the range of 0-9.9 V, the maximum current 330mA for, and can show the actual pipe by digital output voltage values.

本系统以直流电压源为核心，AT89S52单片机为主控制器，通过键盘来设置直流电源的输出电压，设置步进等级可达0.1V，输出电压范围为0—9.9V，最大电流为330mA，并可由液晶屏显示实际输出电压值。系统有过流保护电路，当输出电流过大时功率管自动截至，而且有红色指示灯发出警报。

The lead-in voltage and out-of-line voltage of switchbox are detected and converted into frequency signal. The arc voltage signal can be obtained by measuring the two signals. The arc voltage signal and arc light intensity signal are sent to the advanced single-chip microcom puter, PIC16F877, to do synthetic analysis – judgment.

提取配电箱的进线电压和出线电压，分别转换成频率信号进行比较，获得电弧电压信号，并将其和弧光信号一起送入性能先进的PIC16F877单片机，做综合分析判断。

The system voltage instability risk indices that are obtained using the risk assessment method include the voltage instability probability, expected load curtailment to avoid voltage instability, and the relationship between load curtailments and voltage instability probability.

该方法考虑发电机可用发电容量、电网结构及负荷的概率不确定性因素，利用蒙特卡洛模拟法抽样系统样本，并以所提电压稳定校正控制方法来判断样本的静态电压稳定性以及对样本进行电压稳定校正控制。

The transit time and gain characteristics of electrons which travel in the micro-channel plate gated by picoseconds high voltage pulse were simulated. The curves of the transit time versus the voltage pulse width and the voltage amplitude are obtained when the waveforms of the voltage pulse are Gauss, triangle and trapezoid.

对皮秒高压脉冲驱动下微通道板中电子的渡越时间特性和增益特性进行了数值模拟，在电压脉冲波形分别为高斯形、三角形和梯形时，得到了电子渡越时间与电压脉冲宽度、幅度的关系曲线。

Against the models established, the equivalence of DC voltage, OWV and VLF voltage to AC voltage has been widely investigated. It is found that the equivalence factor of OWV is between 1.2 and 1.8, that means OWV has a good equivalence to AC voltage.

针对建立的试验模型，讨论了直流电压、振荡波电压、超低频(0.1Hz)电压与交流电压的等效性，发现振荡波电压的等效系数在1.2-1.8之间，与交流电压等效性较好。

The dielectric barrier corona discharge in a wire-cylinder configuration and the dielectric barrier discharge in a coaxial cylinder configuration are investigated, then the dissipated power and gas gap voltage are calculated by analyzing the measured Lissajous figure.

采用同轴管状反应器产生介质阻档放电，采用同轴线管反应器产生局部电晕放电及介质阻档电晕放电，研究介质阻档放电与介质阻档电晕放电在放电特性与脱硫能耗上的差异。

According to the features of dielectric barrier discharge, the load characteristics of the dielectric barrier discharge type ozonizer were analyzed with the load voltage assumed to be sinusoidal.

实验发现：在铪膜生长时，轰击铪膜的Ar+离子的能量、入射角度和束流密度对薄膜的晶粒取向有很大的影响。

In order to research dielectric barrier discharge characteristics at characteristics at various exciting voltage peak V(subscript P-P and dielectric thickness l(subscript d, a DBD experiment system was established. Using Q-V Lissajous figure method, the effect of exciting voltage peak V(subscript P-P and dielectric thickness l(subscript d on the main discharge parameters were studied.

为了解介质阻挡放电在不同激励电压峰值V和介质厚度l下的放电特性，通过建立介质阻挡放电试验系统，采用Q-V Lissajous图形法研究了激励电压峰值V、介质厚度l对DBD主要放电参量的影响。

Simply inferred the optical-rectification effect in the silicon, discovered the optical electric voltage aeolotropic rule through the experiment of observing the relation between the optical electric voltage and the light wave direction of polarization and the orientation of crystal changing when the Si/Al schottky barrier has been illuminated, and confirm the reason is that the existence of self-field destroy the crystal symmetry, produce second-order nonlinear optical-rectification effect, and the direct-current field which has been produced by the optical-rectification effect and the self-field affect mutually.

推导了硅中的光整流效应，并通过观测Si/Al肖特基势垒受光照时产生的光生电压与光波偏振方向和晶向的变化关系的实验，发现了光生电压的各向异性规律，并确定这是由于内建电场的存在使晶体对称性被破坏，产生二阶非线性效应的光整流，光整流产生的直流电场又与内建电场相互作用的结果。

The shaping method of noncircular part and the tool holder's radial motion characters in noncircular turning process are discussed in detail in the thesis.

论文详细研究了非圆零件的成型方法和加工过程中刀架的径向运动规律。

I have not really liked him,I do not like his this kind of disposition.

我没有真的喜欢他，我不喜欢他的这种性格。