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vapor相关的网络例句

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与 vapor 相关的网络例句 [注:此内容来源于网络,仅供参考]

Mg-doped GaN layers prepared by metalorganic chemical vapor deposition were anealed at temperatures between 550 and 950℃.

用MOCVD技术生长GaN:Mg外延膜,在550~950℃温度范围内,对样品进行热退火,并进行室温Hall、光致发光谱测试。

All these materials are mainly produced by metalorganic chemical vapor deposition technology.

這些所有材料主要是利用金屬氧化物化學氣相磊晶技術所製成的。

The ZnCdSe/ZnSe QD structures were prepared in Stranski-Krastanow mode by metalorganic chemical vapor deposition technique.

针对半导体量子点研究中的热点问题,本论文主要对ZnCdSe量子点的制备和表征进行了研究,取得的主要结果如下: 1。

High quality GaN is grown on GaN substrate with stripe pattern by metalorganic chemical vapor deposition by means of epitaxial lateral overgrowth.

采用侧向外延方法,在制作了条形掩膜图形的GaN衬底上用MOCVD生长高质量GaN。

ZnO films with mosaic structure are grown on Ag-Si(111) templates by atmospheric-pressure metalorganic chemical vapor depositon.

采用常压金属有机化学气相沉积法,在Ag/Si(111)衬底上成功地生长出马赛克结构的ZnO薄膜。

In this thesis, the growth mechanism of InN nanodots on GaN, grown by metalorganic vapor phase epitaxy, at 650oC with different coverages were investigated comprehensively in terms of surface morphological parameters and optical properties.

本篇论文主要是利用原子力显微镜及萤光光谱等实验技术来研究关於InN奈米粒在不同覆盖厚度的过程中的长晶动力学,以及对形貌和发光特性的研究。

Plane GaN films were grown on r-plane sapphire substrates by metalorganic chemical vapor deposition with a two-step AlN buffer layer.

采用MOCVD技术在;面蓝宝石衬底上采用两步AlN缓冲层法外延制备了α面GaN薄膜。

The desired tensile strain value is achieved by only changing the TMGa source flow during low-pressure metalorganic vapor-phase epitaxy.

在低压金属有机化学气相外延的过程中,只需调节三甲基Ga的源流量便可获得所要求的张应变量。

Laser technique ; polarization insensitive ; semiconductor optical amplifier ; strained quantum well ; metalorganic vapor phase epitaxy

激光技术;偏振无关;半导体光放大器;应变量子阱;金属有机化学气相外延法

Flow patterns,spatial distribution of temperature and chemical species,and growth rates during growth processes of GaN in planetary metalorganic chemical vapor deposition reactor are simulated three-dimensionally based on computational fluid dynamics theory.

基于计算流体力学在三维空间中模拟了水平行星式金属有机物化学气相沉积反应器生长GaN材料的流场、热场、反应物与生成物的分布以及材料生长速率等重要物理参数。

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推荐网络例句

As she looked at Warrington's manly face, and dark, melancholy eyes, she had settled in her mind that he must have been the victim of an unhappy attachment.

每逢看到沃林顿那刚毅的脸,那乌黑、忧郁的眼睛,她便会相信,他一定作过不幸的爱情的受害者。

Maybe they'll disappear into a pothole.

也许他们将在壶穴里消失

But because of its youthful corporate culture—most people are hustled out of the door in their mid-40s—it had no one to send.

但是因为该公司年轻的企业文化——大多数员工在40来岁的时候都被请出公司——一时间没有好的人选。