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Metalorganic chemical vapor deposition has been used to produce high quality thin films and epitaxial lay...

金属有机化学气相沉积，是一种可制备各种高质量薄膜和外延薄层的技术。

Metalorganic chemical vapor deposition has been used to produce high quality thin films and epitaxial layers.

金属有机化学气相沉积，是一种可制备各种高质量薄膜和外延薄层的技术。

High quality cubic-phase InGaN has been grown on GaAs (001) substrate by metalorganic chemical vapor deposition.

利用LP-MOCVD技术在GaAs(001)衬底上生长了高质量的立方相InGaN外延层。

Blue-laser DVD formats are happening now. All these materials are mainly produced by metalorganic chemical vapor deposition technology.

而蓝光DVD规格的雷射也即将如此，这些所有材料主要是利用金属氧化物化学气相磊晶技术所制成的。

High quality cubic GaN is grown by metalorganic vapor deposition at an increased growth temperature of 900℃,with the growth rate of 1.6μm/h.

利用MOCVD技术在提高生长温度(900℃)下生长出了高质量的立方相GaN，生长速度提高到1.6μm/h。

The stresses, structural and electrical properties of n-type Si-doped GaN films grown by metalorganic chemical vapor deposition are systemically studied.

本文系统性的研究了Si掺杂GaN薄膜的应力、结构和电学特性。

A high temperature AlN template was grown on sapphire substrate by metalorganic chemical vapor deposition.

我们通过金属有机化合物气相沉积系统在蓝宝石衬底上外延生长了高温AlN模板及后续生长的AlGaN外延层的研究。

Nitrogen-doped p-type zinc oxide thin films are deposited on glass substrates by metalorganic chemical vapor deposition.

采用金属有机化学气相沉积方法在玻璃上生长了掺氮的低电阻p型ZnO薄膜。

AlN film is deposited on a nanorod ZnO template by metalorganic chemical vapor deposition.

用金属有机物气相外延在纳米棒ZnO模板上沉积AlN薄膜。

In this thesis, GaN and its ternary were grown by a home-made atmosphere pressure metalorganic chemical vapor deposition and Thomas Swan 6×2 MOCVD systems.

本文在自制常压MOCVD和英国进口MOCVD系统上对III－Ⅴ族氮化物的生长机理进行了研究，对材料的性能进行了表征。

Breath, muscle contraction of the buttocks; arch body, as far as possible to hold his head, right leg straight towards the ceiling (peg-leg knee in order to avoid muscle tension).

呼气，收缩臀部肌肉；拱起身体，尽量抬起头来，右腿伸直朝向天花板（膝微屈，以避免肌肉紧张）。

The cost of moving grain food products was unchanged from May, but year over year are up 8%.

粮食产品的运输费用与5月份相比没有变化，但却比去年同期高8％。