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vanadium oxide相关的网络例句

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In part one, the properties of catalysts such as iodine, platonic complex, transitional metal oxide and vanadium-containing heteropolyacid were studied in oleum and the process conditions were also analyzed.

催化剂开发中,制备了系列铂配合物催化剂和含钒杂多酸系列催化剂,并对制得的含钒杂多酸系列催化剂进行了XRD、IR、TG表征,确证了催化剂的组成、结构等,考察了催化剂中含钒量不同的催化剂其催化性能与含钒量的关系。

In this paper, the acetalization of benzylaldehyde and 1,3-propanediol in the presence of vanadium phosphorus oxide catalyst was studied.

研究了苯甲醛与1,3-丙二醇在钒磷氧催化剂作用下的缩醛化反应,考察了反应时间、醇醛比、催化剂用量、带水剂种类和用量等因素对苯甲醛1,3-丙二醇缩醛收率的影响。

Firstly, the molybdenum based catalysts modified by silver, phosphorus, vanadium using aluminum oxide as carrier were studied. The results showed that its catalytic performance for 1,2-propane glycol oxidation to methylglyoxal is good.

论文首先对以氧化铝为载体,在银、磷、钒修饰下的钼系催化剂进行了研究,通过实验发现该催化剂对丙二醇氧化制备丙酮醛具有高的催化活性和较好的选择性。

This paper introduces the fundamental theory and technology feasibility of using molybdic oxide instead of molybdenum iron and vanadium slag instead of vanadium iron to smelt ZG20CrMoV steel.

介绍了采用氧化钼代替钼铁、钒渣代替钒铁直接合金化冶炼ZG2 0CrMoV钢的基本理论及工艺技术。

Initially, vanadium oxide V2O3 was prepared through direct reduction using high purity hydrogen.

其中,三氧化二钒是通过氢气直接还原五氧化二钒来生成的。

Vanadium oxide thin film was prepared on K9 glass by ion-sputtering and annealing.

1958年,Morin[1]在贝尔实验室发现了钒的氧化物具有半导体—金属相变特性。

Two kinds of multi-layer structure of VO_x/PS/Si and VO_x/Si were fabricated, and the effects of porous silicon on the composition of vanadium oxide thin films were analysed.

对比了VO_x/PS/Si结构与VO_x/Si结构中氧化钒薄膜电阻对温度的热敏感性能,研究了多孔硅基底温度升高对氧化钒薄膜组分的影响。

The effects of SiO_2 substrate and Si_3N_4 substrate on composition of vanadium oxide thin films deposited using direct current facing targets magnetron sputtering at high substrate temperature were investigated.

高的电阻温度系数和良好的绝热结构是获得高性能微测辐射热计的前提。

The authors have prepared vanadium oxide films by plasma-enhanced chemical vapor depostion and pulsed laser deposition.

鉴于氧化钒是应用于锂充电电池的最有希望的电极材料之一,采用等离子体增强化学气相沉积法和激光溅射沉积法,制备了不同的氧化钒薄膜,并研究了它们的电化学性质。

Vanadium oxide thin films with thickness of 80nm, 440nm and 1μm were deposited on normal glass substrate by reactive DC magnetron sputtering method.

采用直流反应磁控溅射法,在平整光滑的普通玻璃基片表面沉积了厚度分别为80nm、440nm和1μm的氧化钒薄膜。

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