查询词典 type metal

Through above improvement with perfect on antetype equipment foundation have made NMP-Ⅰtype metal nanometer particle preparation installation, so to have established material foundation for prepare metal and alloy nanometer particle.

通过以上的改进和完善在原型设备基础上制作了NMP-1型金属纳米微粒制备装置，从而为制备金属与合金纳米微粒奠定了物质基础。

The invention further discloses a preparation method of the high-voltage N-type metal oxide semiconductor.

本发明还公开了高压N型金属氧化物半导体管的制备方法。

In order to improve electric conductivity of the ZnO n-type semiconductor, the proper metal of choosing to enhanced carrier concentration is a feasible and effective method.

为了获得较多的自由电子并增进n-type半导体的导电性，选择适当金属掺杂至氧化锌薄膜来增加载子数量是可行而有效的方法。

SnO2 is an important n-type metal oxide semiconductor with broad energy levels and widespread apply in gas detection electrode photocatalysts etc.

SnO2是一种重要的宽能级n型半导体金属氧化物，在气体检测、电池电极、光催化剂等方面具有广泛的应用。

The invention further discloses a preparation method of the high-voltage P-type metal oxide semiconductor.

本发明还公开了高压P型金属氧化物半导体管的制备方法。

The finite element model of DN200 type metal bellow was set up,based on the finite element theory.

基于有限元理论建立了DN200型金属波纹管的仿真模型。

Lithium ion battery, Ni-MH (Nickel-Metal hydride) battery, F uel cell , Metal hydride (AB5 type metal hydride, Mg-based metal hydride, NaBH4 etc.) and its application, Syntheses and measurement of structural material and catalyst, Inorganic chemistry, Applied e le ctrochemistry

锂离子电池；镍氢电池；燃料电池；金属氢化物（ AB5型稀土系合金，镁基合金，硼氢化物等）及其应用；催化剂和结构材料；无机化学；应用电化学

The coupling reactions of Suzuki between the transitional metal-catalyzed phenylo boric acid and benzene halide and the Suzuki-Type between phenylo boric acid and carboxylic acid derivatives are two kinds of important reactions in constructing C-C bond.

过渡金属催化的苯硼酸与卤代苯之间的Suzuki和与羧酸衍生物之间的Suzuki-Type偶联反应是构建C-C健的两种重要反应。

The invention discloses a high-voltage P-type metal oxide semiconductor, including a P-type substrate, a deep N-well is arranged on the P-type substrate, an N-well drift region and a P-type drift region are arranged on the deep N-well, an N-type contact hole, a P-type source and a field oxide layer are arranged on the N-well, a P-type drain and the field oxide layer are arranged on the P-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the N-well is smaller than the grid oxide layer part which is positioned above the P-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly.

本发明公开一种高压P型金属氧化物半导体管，包括P型衬底，在P型衬底上设有深N型阱，在深N型阱上设有N型阱和P型漂移区，在N型阱上设有N型接触孔、P型源及场氧化层，在P型漂移区上设有P型漏及场氧化层，其特征在于位于N型阱上方的栅氧化层部分的厚度小于位于P型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层。

The invention discloses a high-voltage N-type metal oxide semiconductor, including a P-type substrate, a P-well drift region and an N-type drift region are arranged on the P-type substrate, a P-type contact hole, an N-type source and a field oxide layer are arranged on the P-well, an N-type drain and the filed oxide layer are arranged on the N-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the P-well is smaller than the grid oxide layer part which is positioned above the N-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly, a P-type impurity injection region is arranged in the P-well, and the P-type impurity injection region is positioned below the thin grid oxide layer.

本发明公开一种高压N型金属氧化物半导体管，包括P型衬底，在P型衬底上设有P型阱和N型漂移区，在P型阱上设有P型接触孔、N型源及场氧化层，在N型漂移区上设有N型漏及场氧化层，其特征在于位于P型阱上方的栅氧化层部分的厚度小于位于N型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层，在P型阱内设有P型杂质注入区且该P型杂质注入区位于薄栅氧化层的下面。

For a big chunk of credit-card losses; the number of filings (and thus charge-off rates) would be rising again, whether

年美国个人破产法的一个改动使得破产登记急速下降，而后引起了信用卡大规模的亏损。

Eph. 4:23 And that you be renewed in the spirit of your mind

弗四23 而在你们心思的灵里得以更新