查询词典 transistors

By using the process, the logic and/or linear and memory transistors are made with different sidewall insulating layers.

藉由使用该处理，该等逻辑电路及/或线性电路晶体管与存储晶体管具有不同的侧壁绝缘层厚度。

This generation is characterized by more and more transistors being contained on a silicon chip.

这一代计算机的特征是一个芯片上包含越来越多的晶体管。

In this work, the effect of hydrogen species on the performance and reliability of deep submicron transistors with SiGe gate was studied.

在本研究中，我们探讨了不同氢含量对於具有矽锗闸极的深次微米电晶体的性能影响和可靠度分析。

Though point-contact transistors were tantalizingly close to an ideal active element, something better was needed.

尽管人们急于把点接触晶体管制成为理想的有源元件，但是，人们需要一些更好的器件。

Log-domain companding technique takes advantage of the exponential I/V characteristics of the active devices such as bipolar junction transistors, compressing the dynamic range of the input sigal and reducing internal voltage amplitudes, it can maintain large dynamic range and high operating frequency under low supply voltage , the main area of application for this technique is the implementation of continuous-time fully integrated filters with low voltage, wide dynamic range, high-frequency, and wide tenability.

对数域压扩技术利用BJT晶体管等有源器件的指数Ⅰ-Ⅴ特性，对信号作对数压缩处理，大大降低了电路内部节点电压的摆幅，能在低电源电压下保持大信号动态范围和高工作频率，该技术的主要应用是设计具有低电压、宽调谐范围、高工作频率和宽动态范围特性的连续时间全集成滤波器——对数域滤波器。

In this thesis, we investigate the vertical-type organic thin film transistors.

在此论文中，我们将研究垂直式有机薄膜电晶体。

IN this thesis, we modify the functional groups to obtain diversity of organic thin-film transistors gas sensing ability.

在此论文中，我们藉由修改官能基来得到有机薄膜电晶体气体变化感觉能力。

Recently, low temperature polycrystalline silicon thin-film transistors have been investigated extensively for their wide applications.

近年来低温复晶矽薄膜电晶体已经引起大量的研究，其应用的方向是相当广泛的。

Specifically, we found that at least two mechanisms are responsible for the negative threshold voltage shift detected by monitor transistors.

特别的是，我们在研究过程中，利用此一结构发现了两种会造成临界电压漂移的机制。

Based on the special design requirements of high frequency circuits in communication systems, the simulations of the process flow and physical characteristics of small-scale (the base width is under 100 nm),ultra-high frequency(the characteristic frequency is upon 15 GHz) bipolar transistors were simulated.

基于通信系统中射频电路设计的特殊要求，对小尺寸(基区宽度低于100nm)、超高频(特征频率高于15GHz)双极晶体管工艺制程和器件的物理特性进行了模拟，为工艺线流片进行可行性研究。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。