查询词典 transistors

Compensate current sources are added to the tail current transistors of each dummy input differential pairs for lower gm variation.

低电压、高共模输入范围使电路适应不同的共模偏置，并满足模拟与数字混合集成电路的应用需要。

One has noted that small conjugated molecules, single- and multiple-wall carbon nanotubes and macromolecules such as DNA possess many useful device characteristics, for instance, molecular switch, molecular memory, negative differential resistance and single-molecule transistors.

人们发现小的共轭分子、单层或多层碳纳米管、大的有机分子具有功能器件的特性，例如：分子开关、分子存储器、负微分电导、分子场效应管等特性，并且对此进行了论证报道。

In semiconductor technology the manufacture of transistors and integrated circuits,involving microcircuit patterns on a silicon wafer,is required.

半导体技术的晶体管和集成电路制造、晶圆的模式包括微电路，是必要的。

At that time we were talking about five micron transistors and a hundred to two, three hundred gates.

在那个时候我们谈论5微米晶体管和100两个， 300门。

Of transistors.The chips enabled engineers to miniaturize the circuits contained in all electronic devices.

这些芯片有指甲般大小能容纳数百个晶体管使的工程技术人员能够将所有电子装置含有的电路微型化。

The nanotube transistors exhibited n-type semiconductor characteristics, and the conductance of nanotube FETs can be modulated by more than 4 orders of magatitude at room temperature.

显示了纳米器件实际应用的可能性。7利用单根CNx／C纳米管作为半导体材料制备了n型的场效应晶体管，器件的电子密度在105～106 cm-1之间，亚阀值斜率为300-800mV／decode之间，开关比约为10000。

The circuits, including 4 value TTL, NOR gate and NAND gate and AND OR NOT gate and five state gate, are designed by use of bipolar transistors. They have good I/O characteristics, great load capacity and robust noise immunity, and their noise margin may reach±0.6V.

采用双极型晶体管设计出了四值TTL"或非"门、"与非"门和"与或非"门电路及五态门，这些电路均具有较好的输入输出特性、较强的负载能力和抗干扰能力，噪声容限可达到± 0 。6V。

Application of avalanche transistors in nanosecond pulse driver.

雪崩晶体管在纳秒脉冲驱动电路中的应用。

Furthermore, by using Natori theory on the field-effect transistor we study the current-voltage characteristics of deformed carbon nanotube field-effect transistors.

在紧束缚理论的基础上，推导出轴向拉伸和扭转形变时碳纳米管的能带公式。

Furthermore, by using Natori theory on the field-effect transistor we study the current-voltage characteristics of deformed carbon nanotube field-effect transistors. For strain deformation, the conductivity of zigzag nanotube presents different characteristics with the remainder of n and 3. For armchair nanotubes, the conductivity does not change with the strain parameter. However, for torsion deformation, the conductivity rapidly increases, specially for the armchair tube. It has many obviously different conductivity behaviors between zigzag tubes and armchair tubes.

进一步应用场效应晶体管Natori理论模拟计算形变碳纳米管场效应晶体管的电流-电压特性的影响，zigzag碳管根据n 与3的余数关系表现出不同的电流变化趋势，而对于armchair碳管轴向拉伸不改变电流；在扭转形变时，碳管电流急剧升高，特别是armchair管。zigzag和armchair管的电流随扭转角度和外电压行为明显不同。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。