查询词典 transistors

We first propose our low power low swing static edge-triggered latch which is very suitable for the register-exchange SMU design due to its less clock loading and fewer transistors number at power and area domain.

首先本论文提出一个新的暂存器架构：低功率低摆幅静态边缘触发闩锁暂存器；由於该暂存器具有较低之时脉节点电容及较少电晶体数目两样特徵，在功率以及面积方面的考量都非常设合於本残存记忆单元的设计。

Issues added: GTO below the opening of the process and shutdown process: Located GTO anode forward voltage electric pressure, when the increase in positive gate trigger current IG, through N1P2N2 transistors amplification makes its collector current IC2 and emitter current IK increase.

问题补充：下面分析GTO的开通过程和关断过程：设GTO阳极电压力正向电压，当在门极加正向触发电流IG后，通过N1P2N2晶体管的放大作用使得其集电极电流IC2和发射极电流IK增加。

In the power supply circuit, series power supply and the adjustment of the series load, the load current flows through all of the adjustments, and transistors Guozainaili worse, once output overload or short circuit, the input voltage increases in the full set of adjustment an emitter, the current surge to adjust the fierce heat, if not over-current protection measures at this time, the adjustment will be burned, power Zhengliuguan also will be greatly threatened or damaged.

中文摘要：在稳压电源电路中，串联型稳压电源的调整管与负载串联，负载电流全部流经调整管，而晶体管的过载能力较差，一旦输出端过载或短路，输入电压全部加在调整管集---射极间，其电流剧增，使调整管猛烈发热，如果此时没有过流保护措施，调整管就要被烧坏，电源整流管也将受到巨大威胁或损坏。

In this study, AlGaN/GaN hetero-junction photo-transistors in detecting ultraviolet spectra have been fabricated and characterized. One of the HPTs features as low-temperature grown GaN insertion layer between based and emitter layers to reduce dark current. The internal gain and response time are also studied for the HPTs with and without the LT-GaN layer.

中文摘要本论文针对氮化镓/氮化铝镓系列异质接面光电晶体作为紫外光波段侦测器之相关制作与研究，包括於磊晶结构中有无插入一层低温成长氮化镓层之两种异质接面光电晶体，并比较其元件讯号放大效果以及响应时间的改变。

In Figure 8, transistors Q1 to Q4 perform the switching of the excitation voltage.

在图8，晶体管Q1到Q4的激励电压的运行转换

In this thesis, the low-temperature (25℃-250℃) sputtered aluminum nitride film was deposited as the gate insulator in organic thin film transistors.

本论文中，低温(25℃-250℃)溅镀氮化铝薄膜被沉积当作有机薄膜电晶体上的闸极绝缘层。

Normal working hours, B2-B1 between the need to add a positive voltage, E-B1 between the PN junction forward biased if the Canadian single-junction transistors that turn, after turn-on, E-B1 between the resistance will soon be reduced, to B2-B1 between the current rapid increase in current increase, so that the resistance between the E-B1 further reduced, so the formation of a strong positive feedback.

正常工作时，B2—B1间需加正电压，E—B1间的 PN结若加正向偏置，单结晶体管即导通，导通后，E—B1间的电阻会很快降低，使B2—B1间的电流迅速增加，电流的增加，又使E—B1间的电阻更进一步的减小，如此形成了强烈的正反馈。

Rather than conserve transistors for core processing functions, he developed a computer that would frivolously throw them at such silly things as drawing icons, windows, pointers and even animations on the screen.

他没有把时间花在为核心的处理功能而保育那些晶体管上，而是去开发了一部计算机，这项工作很容易让他们陷入诸如画图标、窗口、指针，甚至制作屏幕上的动画等繁琐工作中。

Rather than conserve transistors for core processing functions, he developed a computer concept — the Dynabook — that would frivolously deploy silicon to do silly things: draw icons, windows, pointers, and even animations on the screen.

他没有保藏晶体管的中央处理性能，而是打造出一种新的计算机概念—— Dynabook——肆意挥霍晶体管，去做些稀奇古怪的事情：画图、视窗、指示器，甚至电脑动画。

As an example, in the design of a 4-bit ripple carry adder, the second and fourth full adders do not use output inverters for carry generation. one inverter delay is eliminated for every two full adders in the adder chain, and four transistors are reduced. Similarly, in complex designs like the multiplier, the output inverters for generating sum and carry can be used in alternative stages, thereby improving speed and reducing area.

例如，在4位行波进位加法器中，第2级和第4级的加法器不需要用输出反向器进行进位产生，因此，加法器链上的反向器延迟每两级全加器抵消一次，因此可以减少4个晶体管，类似的，在乘法器这样的复杂设计中，用于产生"和"以及"进位"的输出反向器可以用于其它方面，因此可以改善电路的速度和减小面积。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。