查询词典 transistors

Effective mobility and Field effect mobility would also present in comparison to the universal curve related to Si-based transistors at last.

压轴出现的是锗基板上等效载子迁移率( effective mobility， meff )以及场效载子迁移率( field effect mobility， mEF )与矽基板电晶体的宇宙曲线比较结果。

A voltage comparator implemented with AlGaAs/GaAs heterojunction bipolar transistors is reported in this paper.

本文对异质结双极晶体管电压比较器进行了理论分析，设计并制作了国内第一个AlGaAs/GaAs HBT电压比较器电路。

However, the voltage drop of regulating transistors should be controlled at lower level because they work in linear region.

但因为调整管工作在线性区，这种方案有一个必须考虑的关键问题：线性调整管的管压降应控制在一定范围内以保证没有显著的损耗。

Emphasis is placed on the use of organic thin films in active organic devices including organic LEDs, solar cells, photodetectors, transistors, chemical sensors, memory cells, electrochromic devices, as well as xerography and organic non-linear optics. How to reach the ultimate miniaturization limit of molecular electronics and related nanoscale patterning techniques of organic materials will also be discussed.

课程重点是放在主动有机元件内使用的有机薄膜，包括有机LED、太阳能电池、光子侦测仪、电晶体、化学感应器、记忆单元、电致色装置，以及影印技术和有机非线性光学；亦将讨论如何达到分子电子学和有机材质相关的奈米级制像技术的微缩极限。

The chlorion sensitive field effect transistoris made by a core with two field effect transistors,one as Ref-ISFET by polyimide membrane as Ref-gate,another as Work-ISFETby silver chloride membrane as sensitive gate.

本文采用两个场效应管并联的芯片，在其中一个的栅区以聚酰亚胺膜作为参比膜，另一个的栅区以氯化银膜作为氯离子敏感膜，制成氯离子敏感场效应晶体管。

X9313U-WS Pinout: The coupler consists of a AlGaAs LED that is optically cou- pled to a dielectrically isolated photodiode array which drives two series connected high voltage MOS transistors.

X9313U-WS引脚说明：该耦合器由一个砷化铝镓发光二极管是光凑发光二极体为介质隔离光电二极管阵列的驱动两个串联的高压MOS晶体管。

On the silicon substrate an epitomical layer is made,where IC components are formed subsequently.In an CVDprocess,the silicon substrates places in a vacuum crystal tube are first heated to 1,600°C by high-frequency radio power and then H⒉Cl⒉Si and certain gaseous compounds of As or P is injected into the tube to make a deposit of several um on their surface.Ions of As or P are impurity deliberately added to the singl-crystalline silicon structure to supply electrons that transmit "negative"current in the silicon crystals,which is called n-type silicon.Bcan be added as impurity to produce p-type silicon that supplies holes for transmitting "positive"current.Whether a p--type of an n-type silicon substrate is needed depends on what type of transistors is expected to be manufactured on it:n-p-n type of p-n-p type

对硅衬底上的一个epitomical层了，而IC零件形成subsequently.in一个CVD法（化学气相depsition ）过程中，硅衬底的地方在真空晶体管均先加热至1600 ° C时，由高频率的无线电功率，并然后h ⒉氯⒉硅和某些气态的化合物，砷或P ，是注入试管，使存款的几位嗯对他们surface.ions的作为或P是杂质刻意添加到单结晶硅的结构，以供应电子传递的&负面&目前，在硅晶体，即所谓N型silicon.b ，可以增加一条，作为杂质产生的p型硅供应孔转递&积极& current.whether一个P -类型的一个n型硅衬底，是需要靠哪些类型的晶体管预计将在制造上它： NPN型的PNP型

So it is significant for the futural battery-powered mobile devices to have better energy efficiency supplied with the limited energy consumption. 2 For high performance computer systems, in order to achieve higher performance, more and more transistors are integrated, which sharply increases the power dissipation.

与半导体技术的发展速度相比，电池技术发展缓慢，未来的移动设备必须在有限的能量供应下发挥更大的效能。2对于高性能计算机系统来说，为了提高处理器的性能，晶体管的集成度越来越高，导致功耗急剧地增长。

This paper proposes a novel loadless 4T SRAM cell composed of nMOS transistors.

提出了一种新颖的无负载4管全部由nMOS管组成的随机静态存储器单元。

In recent years, low temperature polycrystalline thin film transistors were the key devices in display applications.

近年来，低温复晶矽薄膜电晶体是在显示技术应用中的关键元件。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。