查询词典 transistors

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

This is good for many years before the motherboard power supply, it is by changing the transistors to achieve the degree of conduction of the transistors of a variable resistor, series circuit in the power supply.

这是好多年以前的主板供电方式，它是通过改变晶体管的导通程度来实现的，晶体管相当于一个可变电阻，串接在供电回路中。

With the development and application of three-terminal devices, a millimeter-wave three-terminal device oscillator has some advantages over a two-terminal oscillator, for instance, operation frequency band, efficiency, stability and integrity. Especially, for PHEMT (pseudomorphic high electron-mobility transistors) oscillator and HBT (heterojunction biplor transistors) oscillator, there is lower noise and better integrity, operate in wider dynamic range and higher frequency band.

随着三端器件的发展，相对于毫米波二端器件振荡器而言，毫米波三端器件振荡器具有工作频带宽、效率高、工作稳定和集成度好等优点，特别是用PHEMT和HBT器件制作的振荡器，具有更低的噪声，更大的动态范围，更好的集成度，可以工作在更高的频段，所以固态器件毫米波振荡器已逐步向三端器件振荡器发展。

Topics include: properties, preparation, and processing of compound semiconductors; theory and practice of heterojunctions, quantum structures, and pseudomorphic strained layers; metal-semiconductor field effect transistors; heterojunction field effect transistors and bipolar transistors; photodiodes, vertical-and in-plane-cavity laser diodes, and other optoelectronic devices.

主要内容包括：化合物半导体的特性、制备与制程；异质接面、量子结构和假晶应变层的理论与实际应用；金属半导体接面场效电晶体；异质接面场效电晶体以及异质接面双极电晶体；检光二极体、垂直和平面共振腔镭射二极体、以及其他光电元件。

Topics include: properties, preparation, and processing of compound semiconductors; theory and practice of heterojunctions, quantum structures, and pseudomorphic strained layers; metal-semiconductor field effect transistors; heterojunction field effect transistors and bipolar transistors; photodiodes, vertical-and in-plane-cavity laser diodes, and other optoelectronic devices.

主要内容包括：化合物半导体的特性、制备与制程；异质接面、量子结构和假晶应变层的理论与实际应用；金属半导体接面场效电晶体；异质接面场效电晶体以及异质接面双极电晶体；检光二极体、垂直和平面共振腔雷射二极体、以及其他光电元件。

There are two parts in this thesis. Part I focuses on the transient effect in InGaP/GaAs hetero-junction bipolar transistors. Part II focuses on the P memory effect and buffer-layer-quality determination using C-V measurement in AlGaAs/GaAs pseudomorphic high-electron-mobility transistors. The characterization of hydrogen passivation for InGaP HBTs grown on semi-insulating GaAs substrates is studied. The transient effect caused by hydrogen passivation results the current gain ?

本论文分两部分，第一部份讨论在磷化铟镓的异质接面双载子电晶体中，由於氢的包覆效应产生的特性之研究，由於氢在此种元件中所造成的载子包覆现象是引起电流增益增加的暂态现象的主要原因，本论文提出一个计算氢包覆比例的模型，并与SIMS量测的结果相比对，经过几次热回火处理，此种暂态效应可以被消除。

In this thesis, the linear power amplifiers used for wireless LAN 802.11a standard are designed and implemented by using the discrete GaAs pseudomorphic high electron mobility transistors and InGaP/GaAs heterojunction bipolar transistors supported by Global Communication Tech.

中文摘要本论文使用分立式砷化镓pHEMT 及GCTC InGaP/GaAs HBT 制程设计应用於IEEE 802.11a 无线区域网路之线性化微波功率放大器。

See Plate 4 in Weste and Eshraghian for another example of legged transistors (the transistors connectedto the pad are legged by a factor of four; a note to this effect appears at the bottom of the plate).

课本彩色图四也是分叉电晶体的另一个例子(连到接脚的电晶体被分叉成四个，这个效应的注解写在图页的下方)。

In 1989, we familiar to ear 80486 chipses be released by the INTEL, the great place of this kind of chip lies in the boundary that it broke 1,000,000 transistors actually, integrating 1,200,000 transistors.80486 clock frequencies raise a 33 MHzs, 50 MHzs gradually from the 25 MHzs.80486 is 80386 help processor with mathematics,80387 and 1 high speed of 8 KBses saves an integration slowly in a chip, and in the 80 X86 the serieses for the very first time adopted a RISC technique, can carry out an instruction in a clock period.

1989年，我们大家耳熟能详的80486芯片由INTEL推出，这种芯片的伟大之处就在于它实破了100万个晶体管的界限，集成了120万个晶体管。80486的时钟频率从25MHz逐步提高到33MHz、50MHz.80486是将80386和数学协处理器80387以及一个8KB的高速缓存集成在一个芯片内，并且在80X86系列中首次采用了RISC技术，可以在一个时钟周期内执行一条指令。

The same better common-base and common-emitter properties were observed. Basically, the all-organic metal-base transistors may also be seen as to be a permeable-base transistors, similar to the inorganic/organic hybrid transistors.

研究表明，全有机金属基极晶体管表现了和无机/有机混合型金属基极晶体管相似的特性，其从本质上说也是一种渗透型金属基极晶体管。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。