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transistor相关的网络例句

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与 transistor 相关的网络例句 [注:此内容来源于网络,仅供参考]

Methods of forming the above-described transistor are also provided.

还提供了制作上述晶体管的各种方法。

In this paper the practical structure of Amorphous Silicon Thin Film Transistor–Based Uncooled Infrared Detector is considered, two mathematical models to calculate infrared absorptance are described and the optical properties are studied in use of Optical admittance Matrix Method.

2本文针对非晶硅薄膜晶体管室温红外探测器的实际结构,提出了两种计算红外吸收率的数学模型,并结合光学导纳矩阵法研究了它的光学特性。

This circuit contains a transistor operating in active region and a diode biased in forward direction.

利用这个电路来求漂移管在一个共基极电路中脉冲工作下的储存时间。

In this article,the authors analyze the aiguille voltage of the whole-bridge DC source converter circuit according to the mathematics model when the MOSFET transistor is shut and the instant voltage equations are obtained.

对直流电源变换器的常用电路型式进行了具体工作过程分析;根据所建立的数学模型,分析MOS管关断瞬间的尖峰电压,得出其瞬间电压方程,并应用PSPICE软件的仿真结果对其进行验

The thin film semiconductor device has a thin film transistor 3 formed on a glass substrate 1 containing alkali metal.

该薄膜半导体器件具有在含有碱性金属的玻璃基片1上形成的薄膜晶体管3。

Are you familiar with the performance of this type of transistor amplifier ?

你熟悉这类晶体管放大器的性能吗?

The article introduced the principle and apply of the transistor avalanche through four example of transistor oscillator、 avalanche oscillator、 audio signal generator 、 flash metronome.

本文介绍了晶体管的雪崩原理,通过张弛振荡器、崩振荡器、音频信号发生器和闪光节拍器四个例子介绍了雪崩晶体管的应用。

The present invention relates to an inrush current limiter device for limiting inrushing current to a connectable load comprising: at least one switchable IGBT (Insulated Gate Bipolar Transistor)-based limiter unit for selectively limiting the inrushing current, having at least one current limiting conductor element for limited leading of current, and at least an IGBT-based switch, whereby the IGBT(Insulated Gate Bipolar Transistor)-based switch (Q2) is used as well as a controlled current limiter and as a by-pass element, and at least one control device for controlling the IGBT-based switch, whereby the control device comprises at least one IGBT-based switch supply and means for realizing a smooth flank of an output signal at the selected conductor element.

本发明涉及一种用于限制针对可连接负载的浪涌电流的浪涌电流限制器设备,包括:至少一个可开关的基于IGBT的限制器单元,用于选择性地限制浪涌电流,其具有至少一个限流导体元件,该限流导体元件用于有限引导电流,和至少一个基于IGBT的开关,其中基于IGBT的开关(Q2)用作受控电流限制器和旁通元件,和至少一个控制设备,用于控制基于IGBT的开关,其中控制设备包括至少一个基于IGBT的开关电源和用于实现选定导体元件处的输出信号的平滑侧面的装置。

It also requires less load capability of high-voltage pulse power supply, and allows using avalanche transistor or MOS transistor to replace expensive krytron and unstable spark gap. That has simplified the whole system and improved reliability, stability and flexibility.

降低了对脉冲高压驱动电源负载能力的要求,允许用雪崩管或MOS管代替极其昂贵的冷阴极管和稳定性差的高压火花隙,提高了可靠性和稳定性,简化了系统,增加了灵活性。

Change in oscillation of the transistor circuit to gain, or transfer large transistor operating point.

调换振荡回路中各晶体管,使其增益提高,或调大晶体管的工作点。

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