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transistor相关的网络例句

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与 transistor 相关的网络例句 [注:此内容来源于网络,仅供参考]

Often divided into two types:(1) sine wave oscillator, according to the network oscillation frequency of the different loop selected further divided into RC sinusoidal oscillator, LC sinusoidal oscillators, quartz crystal oscillators, voltage-controlled oscillator, voltage-controlled crystal oscillator and other forms;(2) non-sinusoidal oscillation device, also known as relaxation oscillator, is the use of capacitor charging and discharging and active device (transistor, FET, single-junction transistor, etc.) to generate the pulse-off square wave, rectangular wave, triangle wave, sawtooth wave, or these basic waveforms synthetic waveform and its frequency by the LC time constant charge and discharge circuits to decide.

常分两大类型:(1)正弦波振荡器,根据振荡环路中选频网络的不同,又分为RC正弦波振荡器、LC正弦波振荡器、石英晶体振荡器、压控振荡器、压控石英晶体振荡器等多种形式;(2)非正弦波振荡器,又称张弛振荡器,是利用电容充放电及有源器件(晶体管、场效应管、单结晶体管等)的通断来产生脉冲方波、矩形波、三角波、锯齿波或这些基本波形的合成波形,其工作频率由LC充放电电路的时间常数来决定。

However, because of the obvious snapback breakdown characteristic of NMOS transistor and the layout geometry effect on the distributed base resistance of each parasitic lateral bipolar transistor, multi-finger NMOS cannot be triggered on uniformly under ESD stress.

然而由於N型金氧半电晶体具有明显的骤回崩溃特性,以及布局上每根指状N型寄生横向双载子电晶体之等效基极电阻之不同,造成多指状结构N型金氧半电晶体在静电放电轰击下,并不会均匀的导通来排放静电放电电流,而是集中於某些指状N型金氧半电晶体。

Taking frequency conversion of semiconductor transistor as an example, the basic principles and some problems related are introduced in the article, integrating emitter-injected frequency conversion circuit of transistor, which is often used in superheterodyne to discuss about it.

分析了变频的基本原理和设计变频器的有关注意问题;从三极管输入回路和输出回路的信号入手,讨论了超外差式收音机常用的变频电路的工作原理。

The design for impedance converting circuit of input current,transistor amplifying circuit and converting circuit of output current is presented.The telegrapher equations are adopted to determine the impedance of transmission-line transformer,which is used to convert circuit impedance between signal source and transistor.

讨论了放大器输入回路阻抗变换电路、晶体管放大电路以及输出回路阻抗变换电路的设计思想,运用电报方程从理论上推导出用于信号源和晶体管之间阻抗变换的传输线变压器输入输出阻抗计算公式,由此设计出模拟信号处理电路中非常重要的AB类高功率放大器。

This is achieved by adopting a replica transistor with the same threshold voltage as the sampling transistor.

这是通过采用一个与采样MOS开关具有相同阈值电压的"复制"开关得以实现的。

Because the upper transistor is an emitter follower (gain =~1); and the lower transistor is a variable resistor.

其增益大约为1,这大约为1的增益,不是晶体管放大所得,而是晶体管等效为电阻的结果。

Anisotropically etched insulative sidewall spacers are formed over opposing sidewalls of individual of said transistor gate lines within the peripheral circuitry area prior to forming anisotropically etched insulative sidewall spacers over opposing sidewalls of individual of said transistor gate lines within the memory array area.

在所述存储器阵列区域内的所述晶体管栅极线中的个别者的相对侧壁上形成各向异性蚀刻的绝缘侧壁隔离物(40)之前,在所述外围电路区域内的所述晶体管栅极线中的个别者的相对侧壁上形成各向异性蚀刻的绝缘侧壁隔离物(34)。

Secondly,two regulatable current sources for exicitation of magenetic powder dynamic brake are studied respectively with buck and interleaving two-transistor forward topology. In the power supply with interleaving two-transistor forward topology design,simulations are implemented with Saber simulator,thus the best parameters are achieved which ensured the stability and dynamic characteristic.

二、分别用 BUCK 式和交错并联的双管正激式电路拓扑,研制了磁粉制动器的直流励磁电流源,其中对于交错并联双管正激式的电路进行了基于 Saber 的仿真,确保了电路参数的选取能够保证电路稳定性与动态性能要求。

However, since the capacitor forces an ac ground at the emitter of the output transistor, the capacitor charging currents are proportional to the antilog of the voltage at the base of the output transistor.

然而,由于电容器部队在一个输出晶体管发射极交流接地,电容器的充电电流在输出晶体管的基成正比的电压反对数。

In one embodiment, a memory device comprises a first memory cell and a second memory cell, wherein the first memory cell comprises a first transistor coupled to a bit line and the second memory cell comprises a second transistor coupled to a bit line bar.

在一实施例中,一种存储装置包含一第一存储单元及一第二存储单元,其中该第一存储单元包含一耦接至一位线的第一晶体管,而该第二存储单元包含一耦接至一位线棒的第二晶体管。

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