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transistor相关的网络例句

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与 transistor 相关的网络例句 [注:此内容来源于网络,仅供参考]

With its base voltage 0,transistor Ql will be cut off.

Q1就截止若基极电压为零,晶体管Q1就截止。

It is therefore the purpose of this paper to offer a detailed analysis on the frequency stability of transistor feedback oscillators.

本文将对晶体管反馈振荡器的频率稳定性能作比较详细的研讨。

Feedback method for the reset to the charge sensitive preamplifier. The reset transistor, which is typically used

100CR采用了一种新的反馈方法,淘汰了大部分其他系统中常用的重置晶体管,取而代之的是通过探

A fine-grain sleep transistor insertion technique based on our simplified leakage current and delay models is proposed to reduce leakage current.

首先给出一种泄漏电流和延时的简化模型,并且在此基础上提出了一种降低泄漏电流的细粒度休眠晶体管插入法。

Recently , TFT-LCD(Thin-Film Transistor Liquid crystal Display) is very important to major industries in Taiwan . In order to of satisfy the panel manufacture industry requiring large sizes of panel of cell processes , the conventional processes will be replaced with new technology of cell processes : One Drop Filling (Abbreviation:ODF) in the future . It is important to develop UV/Heat curable resin.In this investigations , we focused on Epoxy Acrylate Oligomer which are major components of ODF Sealant materials. The films are exposed to UV by different times , then the absorption peaks of ethylene and epoxy function group were idendifed with Attenuated Total Reflection-Fourier Transform Infrared Spectroscope to discuss curing ratio and reaction condition .

实验中,将探讨以紫外光和热双效硬化型树脂主要组成为寡聚物为主的ODF封胶材料,将其涂布在玻璃基板上形成薄膜,经过紫外光不同曝光时间及在恒温120℃下不同加热时间,再以衰减全反射式傅立叶转换红外线光谱仪(Attenuated Total Reflection-Fourier Transform Infrared Spectroscope)分析乙烯基和环氧基相关官能基在吸收图谱的变化,探讨在不同环境条件下ODF封胶材料硬化反应程度以及分析鉴定的要素。

It haa certain and regulation instruction meaning to the later device design.This text morrow carried on the design of device. I re-designed the landscape and craft parameter, then went on the actual craft experiment and carried on a test, analyzed the experiment result and simulation result, end got conclusion. From it, investigated the function mechanism of the electrostatic induction transistor and predicted its applied foreground.

本文紧接着进行了SIPT器件的设计,重新设计版图和工艺参数,再经实际工艺投片实验,并对其电参数进行测试,分析了实验结果和模拟结果,最后得出了结论,从中探索静电光敏感应晶体管的光电作用机理以及预测其应用前景。

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