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transistor相关的网络例句

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与 transistor 相关的网络例句 [注:此内容来源于网络,仅供参考]

The design rules of silicon low temperature bipolar junction transistor are obtained from the simulation results. One way is that the concentrations of emitter and base are decreased on the base of the normal bipolar junction transistor. Another way is that base concentration is higher than that of emitter, i.

模拟了普通常温工作的双极晶体管在低温下性能的退变,如电流增益、截止频率、基极电阻和基极-发射极电容等,模拟结果和解析模型分析的结果一致,并与常温的结果作了对比分析。

Simultaneously the model of bipolar junction transistor and CMOS transistor and the basic circuit units such as current mirrors are briefly introduced; with the topology and model circuit ,the principle and feature of the CC are analyzed. The applications of the CC in the fields of the active network and signal process are synthesized.

首先介绍了模拟集成电路在当代社会中的重要性和集成电路研究的必要性,并简要地介绍了双极型晶体管和CMOS晶体管的模型结构以及几种电流镜电路的原理及性能;从电流传送器的拓扑结构入手,在给出其模型电路的基础上,介绍了电流传送器的工作原理。

Modern voltage references are constructed using the energy-band-gap voltage of integrated TRANSISTOR s, buried zener diodes, and junction field-effect TRANSISTOR s.

现代电压基准建立于使用集成晶体管和带状能隙基准、掩埋齐纳二极管和结场效应晶体管。

And the pn-junction diode, the bipolar junction transistor, the metal-oxide-semiconductor capacitor, and the field-effect transistor are covered in 2nd part.

除此之外,针对现在主流的MOS器件与工艺,讨论现代MOSFET的发展趋势。

All, but emphasis on MOS Field-Effect Transistor and Bipolar Junction Transistor

Final Exam 范围包含所有课程,但着重在金氧半导场效电晶体及载子接面电晶体

The first vertical-type transistor we fabricate is static induction transistor, and it provides a current on/off ratio of 4 and a high current output in the order of milliampere.

这可以解释厚度所造成的低注入是由於陷阱所造成的。我们最初的垂直式有机电晶体是静态感应电晶体,它可以提供电流的开/关比为4,以及毫安培等级的电流输出。

In recent years, SiC FET power transistor and GaN high electron movability power transistor represent the third generation semiconductor-wide bandgap semiconductor power devices, have advantages of high breakdown voltage, high power density, as well as high output power, high operation efficiency, high operation frequency, wide instant aneous bandwidth, operation in high temperature environment and strong ability of resisting radiation.

近年来以SiC场效应功率晶体管和GaN高电子迁移率功率晶体管为代表的第三代半导体-宽禁带半导体功率器件具有击穿电压高、功率密度高、输出功率高、工作效率高、工作频率高、瞬时带宽宽、适合在高温环境下工作和抗辐射能力强等优点。

The common-anode junction of all the twelve LEDs is connected to the collector of pnp transistor T2 and the emitter of transistor T2 is directly connected to the positive terminal of 6V battery.

在所有12个LED的共阳极交界处,是连接到T2的集电极PNP晶体管的发射极和T2晶体管是直接连接到6V的电池正极。

A power transistor sometimes has an associated sense transistor.

有时一个功率管会有一个相关的敏感管。

There is sufficient margin for a collector loss in a power transistor, and the high speed high fT transistor which was moreover excellent in the high region property is adopted.

的截止频率是90MHz的数量,并抑制这种晶体管的开关失真是无法避免公司一流的,而且,还实现了平坦的高区域相反应。

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