查询词典 transistor

There are transistor faults of conduction through and open easily to be happened in the power unit of generator excited system.

在发电机励磁系统功率单元中最常见的故障有晶闸管直通和晶闸管开路故障。

The basis mechanism and main process flow of metal induced crystallization poly-Si (MIC poly-Si) dynamic gettering are discussed, and its applications are studied for use in poly-Si thin film transistor devices.

首先阐述了MIC薄膜多晶硅材料动态镍吸杂技术的基本机理和主要工艺过程，然后以多晶硅薄膜晶体管(poly-Si TFT)为例研究了动态吸杂技术的应用。

The technologies associated with the headwords "Internet" and "data highway" wouldn't be conceivable without the invention of the transistor by Bardeen and Brattain.

没有巴丁和布拉顿的电晶体的发明与标题字有关的技术&英特网&和&数据公路&不是想得到的。

Its possible causes are: the transistor operating point is not the choice of a good, high-voltage filter capacitor leakage or damage, leakage heat regulator diode, rectifier diode damage.

其可能原因有：晶体管工作点未选择好，高压滤波电容漏电或损坏，稳压二极管发热漏电，整流二极管损坏等。

The design of high-voltage transistor directly determines the performance of chips.

高压晶体管设计的好坏将直接影响芯片性能的优劣。

See also Nozaki et al.,"A 1-Mb EEPROM with MONOS Memory Cell for Semiconductor Disk Application," IEEE Journal of Solid-State Circuits, Vol. 26, No. 4, April 1991, pp. 497-501, which describes a similar element in a split-gate configuration where a doped polysilicon gate extends over a portion of the memory element channel to form a separate select transistor.

还参见Nozaki等人的&A1-Mb EEPROM with MONOS Memory Cell for Semiconductor Disk Application&(IEEE Journal of Solid-State Circuits，第26卷，第4期，1991年4月，497-501页)，其描述了处于分裂栅极配置中的类似元件，其中掺杂的多晶硅栅极在存储器元件沟道的一部分上延伸以形成单独的选择晶体管。

A novel composite-channel Al x Ga1- x N/Al y Ga1- y N/GaN high electron mobility transistor has designed and optimized.

对新型复合沟道Al x Ga1- x N/Al y Ga1- y N/GaN高电子迁移率晶体管进行了优化设计。

A radiation hardened N channel Si power device——VDMNOSFET (Vertical Double Diffused Metal Nitride Oxide Semiconductor Field Effect Transistor) is fabricated by using a double layer (Si 3N 4 SiO 2) gate dielectric and a self aligned heavily doped shallow P + region.

采用 Si3N4- Si O2 双层栅介质及自对准重掺杂浅结 P+区研制出了一种抗辐射加固功率器件—— VDMNOS-FET (垂直双扩散金属-氮化物-氧化物-半导体场效应晶体管)。

The invention discloses a film transistor array, which has several shared wirings to provide storing capacitance for pixel.

一种薄膜晶体管数组，具有多条用以提供像素储存电容的共享配线。

This also means that the polarity of the voltages must be correct for the type of transistor.

这也说明电压极性必须根据晶体管的类型来改变。

No clear conclusions can be made about the predictie alidity of specific measures, they found, except for criteria for the underuse of drugs for cardioascular disease.

除了心血管病不合理用药标准外，对于特定评价方法的预测效度没有明确的结论。

The third and last is that almost all of them, being infinite in number, have been impostures, and by idle and crafty brains merely contrived and feigned after the event past.

第三、即最后一点是：几乎所有这些不胜枚举的预言都是欺人之谈，都是在事件过后由无聊而狡猾的脑筋推测与凭空捏造的。