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transistor相关的网络例句

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与 transistor 相关的网络例句 [注:此内容来源于网络,仅供参考]

The thin film transistor may include a channel layer, a source electrode, a drain electrode, a protective layer, a gate electrode, and/or a gate insulating layer.

本发明公开了一种薄膜晶体管及其制造方法,该薄膜晶体管可以包括沟道层、源电极、漏电极、保护层、栅电极、和/或栅极绝缘层。

The performances of devices degrade notably when the irradiation dose is larger than these thresholds.(3) The electron-hole pairs in oxides and interface states on Si/SiO〓 induced by radiation, which also can lead the voltage drift of control transistor in pixels, were the chief reason that leads the increase of dark current density in pixels.

3分析认为:辐照在像素的氧化层中诱发的电子—空穴对和Si/SiO〓界面形成的界面态使像素暗电流密度增加;同时也导致转移晶体管的阈值电压漂移,这是造成器件性能退化的主要原因。

We proposed three brand new full adders which is low power and realized in Bootstrapped Pass Transistor Logic.

为了使得有全加器有较低的功率消耗,本论文提出三个全新的全加器电路,其电路架构是以Bootstrapped传输逻辑闸所实现的全加器电路。

W! A4 x+ o x At night he would take a transistor radio to bed where he listened to the local jive-talking deejays.

每天晚上,他都要把他的晶体管收音机抱到床上,听本地电台的音乐节目主持人谈论摇摆乐。

Jockey职业赛马骑师,操作员 At night he would take a transistor radio to bed where he listened to the local jive-talking deejays.

每天晚上,他都要把他的晶体管收音机抱到床上,听本地电台的音乐节目主持人谈论摇摆乐。

The filters are isolated from each other with the same discrete transistor buffer used in the famous 550 series equalizers.

该过滤器是孤立的相同分立晶体管在著名的550系列均衡器使用的缓冲区等。

The etchant gas can be used during a nitride etch step in a process for making a metal oxide semiconductor field effect transistor.

在制造金属氧化物半导体场效应晶体管的工艺中的氮化物腐蚀步骤中,可以使用此腐蚀剂气体。

Q3 and the PNP BJT (bipolar-junction transistor), Q1, effectively buffer the two SDA/SCL lines so that no extra current flows into the open-collector and -drain stages of the I2C devices that connect to the bus when they hold the lines down.

Q3、PNP BJT和Q1有效的缓冲SDA/SCL两条线,所以当连接总线的开集和开漏部分I2C设备的线持续为低时,没有额外的电流流进。

An accumulation channel trench gate insulated gate bipolar transistor is proposed.

提出了一种具有积累层沟道的槽栅IGBT结构。

The thin film transistor may include: a gate insulting layer; a gate electrode formed on the gate insulating layer; a channel layer formed on the gate insulating layer; and source and drain electrodes that contact the channel layer.

具体而言,薄膜晶体管可以包括:栅绝缘层;形成在栅绝缘层上的栅电极;形成在栅绝缘层上的沟道层;以及接触沟道层的源和漏电极。

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