查询词典 transistor

So, this paper presents a interleaved two transistor forward with PFC ahead.

因此本文介绍了一种前端带功率因数校正的交错并联双管正激变换器。

Secondly, based on process characteristics and spice tools, this work presents the transistor level of pipelined ADC.

再根据工艺参数和EDA工具设计出了晶体管级电路并进行了全电路性能仿真。

Temperature, doping and electric field dependent parameters including energy band, impurity and carrier distribution, mobility and PN junction, etc are established The models which is demanded in unification and accordance in accurance, simulation speed, effective range and application efficiency are also obtained 3、Some unique or key low temperature physic effects, such as carrier freeze-out or trapping effect, mobility enhancement effect, steepened subthreshold effect, small dimension effect and heavy injection effect, as well as their influence to the device cryogenic performance are discussed and analyzed Based on the completely understanding of the physic nature and characteristics in low temperatures operation, the technique methods to overcome or to utilize the effects are also presented 4、By systematic analysis of carrier transportation, the device physic analytical model for advanced polysilicon emitter transistor with better cryogenic performance that can be used to simulate the quantity relations between device terminal characteristics and internal structure, doping distribution as well as operation conditions is presented.

建立了依赖于温度、掺杂和电场因子，并且包括材料和结构的各参量数学物理模型，主要包括能带、掺杂及载流子分布、迁移率和PN结等模型，在计算精度、速度、应用范围和使用效率等方面达到和谐统一。 3、深入研究了低温条件下一些特有的或起关键作用的低温物理效应，主要包括载流子冻析或陷阱效应、迁移率增强效应、亚阈性能改善效应、小尺寸效应和大注入效应等，并分析其对器件低温性能的影响，在对低温器件工作的物理本质和特点有深入认识和了解的基础上，找出利用或克服低温物理效应的技术措施。

If the output is interrupted for more than 7 seconds, a transistor goes "high" which then activates the solenoid valve to "blow" ballast.

如果输出是中断了700多秒，晶体管云：&高&，然后激活电磁阀，以&打击&镇流器。

The motive of this paper is to investigate the effect of processing parameters on the properties of silicon nitride and the coverage performance of insulator layer, and the effect of the film thickness of interface layer on the conduction current performance of thin film transistor.

本文旨在研究探索工艺参数对氮化硅薄膜的性能(如光禁带宽度、相对介电常数、折射率等)和钝化层氮化硅薄膜台阶覆盖性能的影响，以及栅界面层氮化硅薄膜厚度对薄膜晶体管导通电流性能的影响，制备性能优良的氮化硅薄膜。

The product the company has is as follows: Automatic Bottle Arranging Machine, Two-end Sifting Counting Machine, Photoelectricity Counting Machine, Automatic Stuffing Machine, Automatic Claw Type Cap Unscrewing Machine, Transistor Electromagnetism Induction Hole Enveloping Machine, Non-Dry Tape Marking Machine, Multi-functional Non-dry Tape Marking Machine, Combination Machine of Two-end Sifting Counting and Stuffing, Liquid Canned Machine, etc.

公司现有产品：自动理瓶机、双头筛动式数片机、动塞纸机、自动爪式旋盖机、高速搓式旋盖机，晶体管电磁感应封口机，不干胶贴标机，多功能不干胶贴标机，双头筛动数片塞纸组合机、液体灌装机等产品。

With gate-all-around cylindrical architecture,the transistor is controlled by an essentially infinite number of gates surrounding the entire cylinder-shaped channel.

就圆柱体全包围栅场效应管器件结构而言，该器件由无数多个将圆柱体形沟道全部包围的栅所控制。

With gate-all-around cylindrical architecture,the transistor is controlled by an essen-tially infinite number of gates surrounding the entire cylinder-shaped channel.

就圆柱体全包围栅场效应管器件结构而言，该器件由无数多个将圆柱体形沟道全部包围的栅所控制。

The source diffusion layer and the drain diffusion layer are formed integral with each other, so that the protection circuit on the input end is substantially constituted of one buffer transistor.

源扩散层和漏扩散层相互形成整体，使输入端的保护电路基本上构成一个缓冲晶体管。

The thin film transistor may include a channel layer, a source electrode, a drain electrode, a protective layer, a gate electrode, and/or a gate insulating layer.

本发明公开了一种薄膜晶体管及其制造方法，该薄膜晶体管可以包括沟道层、源电极、漏电极、保护层、栅电极、和/或栅极绝缘层。

A carrier gas such as nitrogen is directed through line 20 and valve 22 to connect with line 26 and mix with the gas sample.

如氮气之类的载体通过管线20和阀22引入，与管线26相通，与气体样品混合。

But for the most part, knaves and parasites had the command of his fortune

然而支配他的家产的大多是恶棍和寄生虫。