查询词典 transistor

Monolithic Microwave Integrated Circuit; Pseudomorphic High Electron Mobility Transistor; GaAs; Nonlinear Model; Power Amplifier

微波单片集成电路；赝配高电子迁移率晶体管； GaAs；非线性模型；功率放大器

ABSTRACT In this dissertation, the device physics, optimum structures, material design and growth and fabrication of Si/SiGe heterojunction bipolar transistor , as well as the physical parameter models for pseudomorphic Si〓Ge〓 layers grown on Si substrate have been studied systematically.

本文在Si/SiGe HBT器件物理、优化结构、材料的结构设计与生长、器件的实验研制以及外延在Si衬底上的Si〓Ge〓赝晶层的材料参数模型等方面进行了较。。。

A 5 GHz phase-locked loop chip based on 0.2μm GaAs PHEMT (pseudomorphic high-electron-mobility transistor) technology has been realized and characterized.

给出了基于0.2μm砷化镓赝晶高电子迁移率器件工艺设计的高速锁相环芯片的电路结构、性能分析与测试结果。

Using 0.15-micron-gate-length GaAs pseudomorphic high-electron-mobility-transistor device technology, the power amplifier covers the 17 to 25 GHz frequency bands and has a signal gain of 20 decibels with +28 dBm P1dB compression point.

采用0.15微米的高电子移导率场效晶体管器件技术的这一功率放大器的频率范围为17～25 GHz，增益为20分贝(相对+28 dBm P1dB压缩点)。

For airbridge fabrication, tungsten nitride was chosen as the diffusion barrier for copper-airbridged pseudomorphic high electron mobility transistor due to its compatibility with the conventional airbridge process.

在本实验中，空气桥制作上使用氮化钨作为铜导线高电子迁移率电晶体之扩散障碍层，这是由於氮化钨和传统制程上有高度的相容性。

A 2.6 GHz power amplifier is designed and implemented in hybrid microwave integrated circuit using GaAs pseudomorphic high electron mobility transistor for WiMAX applications.

本论文采用砷化镓拟态高电子移动率电晶体研制应用於全球互通微波存取系统之2.6GHz功率放大器混成微波积体电路。

A 2.6 GHz highly linear low-noise amplifier is designed and implemented in hybrid microwave integrated circuit using GaAs pseudomorphic high electron mobility transistor for WiMAX applications.

本论文采用砷化镓拟态高电子移动率电晶体研制应用於全球互通微波存取系统之2.6 GHz高线性度低杂讯放大器混合式微波积体电路。

Compound semiconductor devices are key parts of RF communication applications because they have advantages of high electron mobility, high working frequency, low RF loss, high linearity and low noise. It is so-called "pHEMT" for full name "Pseudomorphic High Electron Mobility Transistor".

中文摘要Ⅲ-Ⅴ族化合物半导体材料所制成之元件，具有高载子迁移率、工作频率高、射频损耗低、高线性度、低杂讯等优势，使得Ⅲ-Ⅴ族化合物半导体元件成为现今射频通讯应用之关键部份。pHEMT为假晶高电子迁移率电晶体之简称。

A novel lightly-doped channel approach for linearity improvement of InGaP/InGaAs pseudomorphic high-electron-mobility transistor device was presented. Light doping in the channel region of the conventional δ-doped InGaP/InGaAs PHEMT was adopted to provide a uniform and symmetric electron distribution in the channel region to achieve flat extrinsic transconductance distribution under different gate bias conditions.

本次实验在传统矽平面掺杂元件结构的通道区域中加入微量的杂质浓度掺杂，使得电子在元件通道层中的分布更为均匀及对称，以期望在不同的闸极偏压条件下得到较为平坦的转导值分布曲线，改善磷化铟镓/砷化铟镓假晶式高电子迁移率电晶体的线性度表现。

An integrated laser and optical modulator driver for ultra-high speed optic-fiber communication systems is designed and fabricated in a 0.2m gate length AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor process.

采用0.2m GaAs PHEMT工艺设计并实现了超高速光纤通信系统用激光二极管／调制器集成驱动器电路。

No clear conclusions can be made about the predictie alidity of specific measures, they found, except for criteria for the underuse of drugs for cardioascular disease.

除了心血管病不合理用药标准外，对于特定评价方法的预测效度没有明确的结论。

The third and last is that almost all of them, being infinite in number, have been impostures, and by idle and crafty brains merely contrived and feigned after the event past.

第三、即最后一点是：几乎所有这些不胜枚举的预言都是欺人之谈，都是在事件过后由无聊而狡猾的脑筋推测与凭空捏造的。