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transistor相关的网络例句

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与 transistor 相关的网络例句 [注:此内容来源于网络,仅供参考]

If you are unfamiliar with higher voltage circuit construction, I would recommend making a radio with a transistor or field effect transistor.

如果你不熟悉高乙电下的制作,我建议你制作晶体管或者场效应管的收音机。

The compensation circuit includes a compensation transistor of the same type as the field effect transistor.

所述补偿电路包括一个与场效应晶体管相同型号的补偿晶体管。

The fabrication and analysis of poly-Si thin film transistor and Si nanowires field effect transistor were studied in this thesis.

本论文是有关低温多晶矽薄膜电晶体与矽奈米线场效电晶体之制备与分析。

In order to grasp the characteristic of the field effect transistor, new idea was brought forward for expressing the field effect transistor with digital formula in teaching course.

为学习掌握场效应管的特性,在教学中提出了数字公式表示场效应管规律的新方法。

A control circuit is connected to the field effect transistor and provides a current through a control current path to produce the field effect transistor input voltage.

控制电路连接到场效应晶体管并提供通过控制电流路径的电流以产生场效应晶体管输入电压。

And highlights the DNA field effect transistor sensor of the study process, embodies the DNA field effect transistor sensor is small in size, light weight, easy to implement integration features in the development of multiple genes simultaneously testing has irreplaceable advantages.

并着重介绍了DNA场效应晶体管传感器的实验研究过程,体现了DNA场效应管传感器具有体积小、重量轻、易于实现集成化的特点,在发展多基因同步检测方面有着不可替代的优势。

As-grown ZnO:N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor. The fabricated devices on glasses demonstrate typical field effect transistor characteristics.

接着我们把掺氮ZnO薄膜作为沟道层材料,用Si3N4做栅绝缘层在非晶玻璃上制备了ZnO基薄膜晶体管,ZnO-TFT器件表现出了典型的场效应晶体管的输出特性。

To better match the characteristics of the two PN junctions (the diode junction and the transistor base-emitter junction), a transistor may be used in place of a regular diode, like this

为了更好地匹配两个PN结地特性(二极管PN结和晶体管发射结),可以用晶体管代替二极管,如图。

Analyzing the various problems of current steady-state operation life test standard, it is pointed out that, not measuring and controlling, transistor junction temperature in current transistor steady-state operation life test can lead to fatal inaccuracy of the test results.

在分析了现行标准中晶体管稳态工作寿命试验方法存在问题的基础上,认为在现行的稳态工作寿命试验中没有对晶体管的结温实施测量和控制,是导致试验结果不准确的重要原因。

The change of electrical performances of 1 MeV electron irradiated silicon-germanium heterojunction bipolar transistor and Si bipolar junction transistor was studied.

研究了 1 MeV 不同剂量电子辐照前后 SiGe 异质结晶体管的直流特性,并与 Si 双极晶体管进行了比较。

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