查询词典 transistor

To better match the characteristics of the two PN junctions (the diode junction and the transistor base-emitter junction), a transistor may be used in place of a regular diode, like this

为了更好地匹配两个PN结地特性（二极管PN结和晶体管发射结），可以用晶体管代替二极管，如图。

Analyzing the various problems of current steady-state operation life test standard, it is pointed out that, not measuring and controlling, transistor junction temperature in current transistor steady-state operation life test can lead to fatal inaccuracy of the test results.

在分析了现行标准中晶体管稳态工作寿命试验方法存在问题的基础上，认为在现行的稳态工作寿命试验中没有对晶体管的结温实施测量和控制，是导致试验结果不准确的重要原因。

The change of electrical performances of 1 MeV electron irradiated silicon-germanium heterojunction bipolar transistor and Si bipolar junction transistor was studied.

研究了 1 MeV 不同剂量电子辐照前后 SiGe 异质结晶体管的直流特性，并与 Si 双极晶体管进行了比较。

The design rules of silicon low temperature bipolar junction transistor are obtained from the simulation results. One way is that the concentrations of emitter and base are decreased on the base of the normal bipolar junction transistor. Another way is that base concentration is higher than that of emitter, i.

模拟了普通常温工作的双极晶体管在低温下性能的退变，如电流增益、截止频率、基极电阻和基极-发射极电容等，模拟结果和解析模型分析的结果一致，并与常温的结果作了对比分析。

Simultaneously the model of bipolar junction transistor and CMOS transistor and the basic circuit units such as current mirrors are briefly introduced; with the topology and model circuit ,the principle and feature of the CC are analyzed. The applications of the CC in the fields of the active network and signal process are synthesized.

首先介绍了模拟集成电路在当代社会中的重要性和集成电路研究的必要性，并简要地介绍了双极型晶体管和CMOS晶体管的模型结构以及几种电流镜电路的原理及性能；从电流传送器的拓扑结构入手，在给出其模型电路的基础上，介绍了电流传送器的工作原理。

Modern voltage references are constructed using the energy-band-gap voltage of integrated TRANSISTOR s, buried zener diodes, and junction field-effect TRANSISTOR s.

现代电压基准建立于使用集成晶体管和带状能隙基准、掩埋齐纳二极管和结场效应晶体管。

And the pn-junction diode, the bipolar junction transistor, the metal-oxide-semiconductor capacitor, and the field-effect transistor are covered in 2nd part.

除此之外，针对现在主流的MOS器件与工艺，讨论现代MOSFET的发展趋势。

All, but emphasis on MOS Field-Effect Transistor and Bipolar Junction Transistor

Final Exam 范围包含所有课程，但着重在金氧半导场效电晶体及载子接面电晶体

The first vertical-type transistor we fabricate is static induction transistor, and it provides a current on/off ratio of 4 and a high current output in the order of milliampere.

这可以解释厚度所造成的低注入是由於陷阱所造成的。我们最初的垂直式有机电晶体是静态感应电晶体，它可以提供电流的开/关比为4，以及毫安培等级的电流输出。

In recent years, SiC FET power transistor and GaN high electron movability power transistor represent the third generation semiconductor-wide bandgap semiconductor power devices, have advantages of high breakdown voltage, high power density, as well as high output power, high operation efficiency, high operation frequency, wide instant aneous bandwidth, operation in high temperature environment and strong ability of resisting radiation.

近年来以SiC场效应功率晶体管和GaN高电子迁移率功率晶体管为代表的第三代半导体－宽禁带半导体功率器件具有击穿电压高、功率密度高、输出功率高、工作效率高、工作频率高、瞬时带宽宽、适合在高温环境下工作和抗辐射能力强等优点。

A carrier gas such as nitrogen is directed through line 20 and valve 22 to connect with line 26 and mix with the gas sample.

如氮气之类的载体通过管线20和阀22引入，与管线26相通，与气体样品混合。

But for the most part, knaves and parasites had the command of his fortune

然而支配他的家产的大多是恶棍和寄生虫。