查询词典 transistor

So we're going to use a little transistor radio and we're going to plug our connector from our transmitter into the radio...

现在，我们会用到一台小晶体管无线电并要将从传输器拉出的接头插入无线电中。。。

The Rancher is easy to start, thanks to its full transistor ignition with electronic advance.

该牧场主很容易开始，感谢充分发挥其晶体管的电子点火提前。

Another; my company long-term acquisition of the following in-line DIP, SMD SMD components: integrated circuits, the second transistor, voltage regulator tubes, electrolytic capacitors inductors resistors, tantalum capacitors, thyristor, VCD/DVD/MP3 laser head, infrared emission receive, line pipe, BGA chips, Hall element, LED, Crystal, Relays, tongue tongue reed pipe reed relays and other electronic components, the volume of a large number of small open!

另；我公司长期收购以下直插DIP，贴片SMD元器件：集成电路、二三极管、稳压管、电解电容电阻电感、钽电容，可控硅、VCD/DVD/MP3激光头、红外发射接收、行管、BGA芯片，霍尔元件、发光管、晶振，继电器，舌簧管舌簧继电器等各种电子元器件，量大量小不限！

Apply to transistor , thermal converter , temperature sensor , car refrigerator etc..

应用于电晶体、热变换器、温度感知器、汽车冰箱等。

Callbacks or repeated repairs due to wrong transistor replacement will cost you extra money and a waste of time.

回调或反复维修，是由于错误的晶体管替换将耗资你额外的金钱和时间的浪费。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

Using 60Co γ-rays and 70～180 keV X-rays,the test results show that saturation characteristics of the cavity ionization chamber meet the requirement of DIS detector. Direct Ion Storage detector,tissue-equivalent cavity ionization chamber,MOS field effect transistor,saturation characteristic curve

本文从探测器原理出发，设计与研制DIS探测器中组织等效空腔电离室，重点从壁材料、气体成分、腔体形状和尺寸、壁厚度以及绝缘材料等角度，测试电离室辐射性能，以为研制新型DIS探测器奠定基础。1DIS探测器原理图1直接电

Through studying distribution regularity of switching angle in SHET and the problem found when improving quality and efficiency of output waveform, optimal strategies that double switching angles and minimum pulses are ignored are proposed, the goal that hardware circuit is convenient to be made and more harmonics are eliminated by using less loss switching transistor is reached.

通过对特定消谐技术中开关角的分布规律及在提高输出波形质量和效率时所遇问题的研究，提出了省略开关角对及省略窄脉冲的优化策略，达到了便于硬件实现、功率开关管的损耗较小、而消除的谐波次数较多的目的。

In February 1956, with financing from Beckman Instruments Inc., he founded Shockley Semiconductor Laboratory with the goal of developing and producing a silicon transistor.

在1956年的二月，靠着贝克门仪器公司的资金支持，他创立了以研发和生产硅晶体管为目标的萧克利半导体研究室。

Shockley had been part of the Bell Labs team that invented the transistor.

肖克利已部分团队，贝尔实验室发明了晶体管。

A carrier gas such as nitrogen is directed through line 20 and valve 22 to connect with line 26 and mix with the gas sample.

如氮气之类的载体通过管线20和阀22引入，与管线26相通，与气体样品混合。

But for the most part, knaves and parasites had the command of his fortune

然而支配他的家产的大多是恶棍和寄生虫。