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transistor相关的网络例句

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The company was founded in 2000 dedicated to various brands of electronic components distribution, Main: ALTERA, Sanyo, Roma, Toshiba, Samsung, Philips, Pu-cheng, KEC, JRC, NEC, ST, OKI , Hetai, Motorola, RATO, AUK various brands of the world, such as in-line, SMD: IC, II, transistor, varactor, sound of tubes, field effect transistor, single bi-directional Thyristor and various photoemission tube to receive first-class components, widely used in car audio, car amplifier, car / home DVD, VCD, CD, MP3, Tuner tuner, LCD displays, and other fields.

本公司成立于二零零零年,致力于经销各种品牌电子元器件,主营:ALTERA ,三洋、罗姆、东芝、三星、飞利浦、普诚、KEC、JRC、NEC、ST、OKI,合泰,摩托罗拉,RATO,AUK等世界品牌的各种直插、贴片:IC、二、三极管、变容管、音响对管、场效应管、单双向可控硅及各种光电发射管、接收头等元器件,广泛应用于汽车音响、汽车功放、车载/家用DVD、VCD、CD、MP3、高频头调谐器、液晶显示器等领域。

METHODS: On the basis of PMT passive voltage biasing circuit, Bipolar Transistor or Field Effect Transistor were used. Additionally,"adjustable constant current technology" was adopted to avoid the effect of temperature on circuit.

在电阻型光电路倍增管偏置电的基础上,增加双极型晶体管或场效应晶体管构成有源光电倍增管偏置电路;并采用可调恒流技术,以解决温度对电路的影响。

The principle is using thefast breakover of avalanche transistor drive the electron tube. The full time of 4200Vvoltage is about 20ns. The circuit can normally work under 100kHz frequencies.Design an extra fast Q-switch circuit by series arrangement of avalanche transistor.

本论文主要做了以下几方面工作:1、推导了重复率激光基本参数(脉冲能量、脉冲宽度和峰值功率)与周期的关系,并且分析了重复率激光系统运转的稳定性。2、设计了雪崩管-电子管退压电路,由雪崩管驱动电子管开关,4200V高压退压沿20ns左右,能够在100kHz频率下工作。

Main technical specification and inspection condition: Main sound track output≥10W, Input resistance≥47KΩ, Frequency20Hz~20KHz, Load resistance8Ω, Total wave distortion≤1%, Ultra bass channel output≥20W, Frequency≤100Hz,uses the transistor and giving up field effect tube and electron tube and reduction transistor and so on carries on the discussion.

其主要技术指标及考核条件为:主声道的输出功率≥10W,输入电阻≥47KΩ,频率响应20Hz~20KHz,负载电阻8Ω,总波失真≤1%,超低音通道输出功率≥20W,频率响应≤100Hz,,同时采用全晶体管的设计。

Therefore, if we have a way of holding emitter current constant through a transistor, the transistor will work to regulate collector current at a constant value.

于是,只要我们能让晶体管的发射极电流保持恒定,它就能保持发射极电流为恒定值。

For weak nonlinear distortion, the expressions of total harmonic distortion, the second order intermodulation distortion(IM2 ), the third order intermodulation distortion(IM 3) and intercept point(IP 3) are deduced. With the aid of software Multisim, we simulate transistor common emitter amplifier, transistor common emitter amplifier with resistor in emitter, differential amplifier and differential amplifier with resistor between emitters. The simulational results and theoretical analyses are almost the same.

针对弱非线性失真,推导了总谐波人、二阶互调失真( IM2 )、三阶互调失真( IM3)和截点( IP3)的表达式,借助于 Multisim软件,对晶体管共发放大器、发射极带反馈电阻的失发放大器、差分放大器和发射极间带反馈电阻的差分放大器进行了仿真,并与理论结果作了比较,结果令人满意。

In Two-Transistor Flyback Converter circuit, a power semiconductor device in Flyback Converting circuit has been replaced by two power semiconductor devices which parallel connected with an ultra-fast diode with soft recovery characteristics. Two-Transistor Flyback Converter can reduce greatly the switching stress of the power switch and does not need to degausser, suitable for high input voltage Switching Power Supply.

反激变换是从Buck-Boost变换演变而来的,将反激变换电路中的单个功率开关管用两个替代,并在每个功率开关管上并联一十箝啦的快恢复二极管而形成的双晶体管反激变换电路,能大大降低功率开关管承受的开关应力,且不需要消磁电路,非常适用于高输入电压的开关电源。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业,不在行,求高手帮忙。谢谢!具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

Each transistor is independently mounted and easily config- ured for either dual transistor or cascode operation.

每个晶体管是独立安装,容易配置,在双晶体管或级联操作被保险。

Figure 1-14 shows an NPN transistor and a PNP transistor in the feedback path to provide dual polarity operation.

图1-14示出反馈通路采用一个NPN晶体管和一个PNP晶体管来实现双极性工作。

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