查询词典 transistor

Note 4: Assumes that the external PNP pass transistor has negligible B-E reverse-leakage current when the emitter is biased at 0V and the base is biased at 4.2V.

注4：假设的外部PNP晶体管已经成为微不足道的反向漏电流时，发射器是在0V和有偏见的基础是偏颇于4.2V。

This constant emitter current, multiplied by a constant α ratio, gives a constant collector current through Rload, provided that there is enough battery voltage to keep the transistor in its active mode for any change in Rload's resistance.

这个恒定的发射极电流，乘以恒定的系数α，就得到流过负载Rload的恒定的集电极电流。前提是电池电压足够高，不论Rload如何变化，晶体管都能工作在放大区。

Well, the α ratio works similarly: if emitter current is held constant, collector current will remain at a stable, regulated value so long as the transistor has enough collector-to-emitter voltage drop to maintain it in its active mode.

系数α的作用与之类似：如果发射极电流保持恒定，只要集电极－发射极电压足以使其保持在放大区，集电极电流也将稳定保持。

If you change the diode current by changing the resistance value of Rbias, then the transistor's emitter current will follow suit, because the emitter current is described by the same equation as the diode's, and both PN junctions experience the same voltage drop.

正因为发射极和二极管的电流用同一个方程描述，而且两个PN结共用同一个电压，每当你通过改变Rbias改变了晶体管电流，晶体管发射极电流也必将随之同样改变。

In paper the phase noise L of the transistor is taked as function of Te, Re and R_(L1) for the first time, where Ie is emitter current, Re is resistor of emitter degeneration feedback and R_(L1) is aseismatic resistor on the collector.

文中得出了晶体管的发射极电流I_e、发射极反馈电阻R_e和集电极防振电阻R_(L1)与相位噪声L或Sφ

Those next ten years say the introduction of the transistor, which would become a vital part of the inner workings of the computer, the ENIAC 1 computer, as well as many other types of systems.

未来十年说这些引进的晶体管、这将成为一项重要的内部运作的计算机，计算机eniac，以及许多其它类型的系统。

This thesis described the etching characteristics of silicon nitride passivation films in the thin-film transistor structure using an enhanced capacitive-coupled high-density plasma etcher. The main parameters used in these experiments were RF source power, RF bias power, chamber pressure, SF6, O2 and He gas flow rates.

中文摘要本研究以加强型电容耦合式高密度电浆蚀刻机台来研究蚀刻氮化矽结构，实验操作参数为射频电浆源功率、射频偏压源功率、SF6、O2、He气体流量和腔体压力。

Finally, some effective measures to protect the high-power transistor are presented by simulation, which provides the theoretical guidance for the modified design of the exciter of the generator.

因此必须对该类故障产生的机理进行分析，查明影响因素，为励磁系统的改进设计提供理论依据，提高发电机系统

In this paper ,the failure analysis of a type of high frequency power transistor is introduced .

介绍了对某型号高频大功率晶体管进行的失效分析。

The voltage stabilizing circuit includes a bipolar transistor, a capacitor module and an operation amplifier for feedback control.

该稳压电路包含有：一双极结型晶体管，一包含有电容的电容模块，以及一作为反馈控制的运算放大器。

A carrier gas such as nitrogen is directed through line 20 and valve 22 to connect with line 26 and mix with the gas sample.

如氮气之类的载体通过管线20和阀22引入，与管线26相通，与气体样品混合。

But for the most part, knaves and parasites had the command of his fortune

然而支配他的家产的大多是恶棍和寄生虫。