查询词典 transistor

The invention relates to an amplifier circuit containing a high-frequency transistor (1) and having a circuit (2) for adjusting the operating point, which provides a base current for the high-frequency transistor (1) according to the voltage released at a resistor (3) which is connected in the collector ring of the high-frequency transistor (1). The circuit (2) has a differentiating unit (20), fed by the supply voltage, which compares the voltage released at the resistor (3) with a reference voltage.

带有高频晶体管(1)的放大器电路具有一个用于工作点调整的电路(2)，其依赖于在连接在高频晶体管(1)的集电极电路中的电阻(3)上下降的电压为高频晶体管(1)提供基极电流，电路(2)具有一个由供电电压馈电的差分节(20)，其把在电阻(3)上下降的电压与基准电压比较。

The ion-sensitive field effect transistor was first introduced by P.

Ion-sensitive field-effect-transistor最早是由P。

One circuit of APF using IGBT(Insolate Gate controlling Bipolar Transistor) is introduced in this paper, the Simulation approach about the protection of IGBT is present. Some good results are given.

本文介绍了一种使用IGBT(Insolate Gate controlling Bipolar Transistor)的电力有源滤波电路，并从保护电力电子器件的角度对电路进行了仿真研究，得到一些有益的结论。

One circuit of APF using IGBT(Insolate Gate controlling Bipolar Transistor) is introduced in this paper, the Simulation approach about the protection of IGBT is present. Some good results are given. r 35lAI--http://www.cn-pe.cn8cMt4c

本文介绍了一种使用IGBT(Insolate Gate controlling Bipolar Transistor)的电力有源滤波电路，并从保护电力电子器件的角度对电路进行了仿真研究，得到一些有益的结论。

Moreover, FSA-TFTs can effectively suppress the floating-body effect and parasitic bipolar junction transistor action compared with conventional TFTs.

而且，它可以有效地抑制浮接基体效应(floating-body effect)和寄生双极性接面电晶体效应(parasitic bipolar junction transistor action)。

Thus, the output will always be driven by a single transistor, either P- channel or N-channel. Since they are as closely matched as possible, the output resistance of the gate will always be the same, and signal behavior is therefore more predictable. Fig. 3.4 CMOS NAND gate One of the main problems with CMOS gates is their speed. They cannot operate very quickly, because of their inherent input capacitance. B-series devices help to overcome these 24 Lesson 3 CMOS Logic Circuit 25 limitations to some extent, by providing uniform output current, and by switching output states more rapidly, even if the input signals are changing more slowly. Note that we haven't gone into all of the details of CMOS gate construction here. For example, to avoid damage caused by static electricity, different manufacturers developed a number of input protection circuits to prevent input voltages from becoming too high. [3] However, these protection circuits don't affect the logical behavior of the gates, so we won't go into the details here. New Words and Phrases 1. CMOS abbr.

略语互补金属氧化物半导体(complementary metallic oxide semiconductor)逻辑，逻辑学，逻辑性，推理方法补充的，补足的，互补的电池供电的门电路，逻辑门，闸门，控制栅，大门，通道，门口，入口伏特，环骑，闪避基础的，基本的，主要的基本原则，基本原理增强型金属氧化物半导体场效应晶体管(metallic oxide semiconductor field effect transistor)反相器，反用换流器，变极器来源，水源，消息来源，原始资料，发起者源，源极排水沟，消耗，排水漏极排出，喝干，耗尽排水，流干，耗尽相同的，相配的，匹配的匹配有效地，有力地，事实上，实际上无限的东西无穷大无穷的，无限的，无数的，极大的接地的正向偏置的，正偏的或非 25 2。

An analog control, in accordance with corresponding changes in the load modulation transistor gate of the base or bias, to achieve the output transistor switching power supply or transistor turn-on time of change in this way can the power supply output voltage in the workplace Conditions of constant change.

一种模拟控制方式，根据相应载荷的变化来调制晶体管栅极或基极的偏置，来实现开关稳压电源输出晶体管或晶体管导通时间的改变，这种方式能使电源的输出电压在工作条件变化时保持恒定。

In this paper, based on high-power switching devices insulated gate bipolar transistor, a novel sinusoidal signal generator applied to UHV-FTRTPS is developed. The generator possesses plenty of merits: uncompounded structure, less components and easy maintenance.

提出采用大功率开关器件绝缘栅双极晶体管(insulated gate bipolar transistor，IGBT)来代替模拟器件产生特高压试验所需的正弦信号，结构简单、元器件数目少、易维护。

To the liquid-crystal display from its structure, the principle as well as the classification has carried on the introduction, twists to the row (TN-Twisted Nematic); Ultra distortion to row (STN-Super TN); Double-decked ultra distortion to row (DSTN-Dual Scan Tortuosity Nomograph); The thin film crystal (TFT-Thin Film Transistor), introduced the thin film crystal liquid-crystal display with emphasis.

对液晶显示器从其结构，原理以及分类进行了介绍，扭曲向列型(TN-Twisted Nematic)；超扭曲向列型(STN-Super TN)；双层超扭曲向列型(DSTN-Dual Scan Tortuosity Nomograph)；薄膜晶体管型(TFT-Thin Film Transistor)，重点介绍了薄膜晶体管型液晶显示器。

Voltage Source and Current Source, Thevenin Theory, Trouble Shooting, Characteristic Curve of Diode, Diode Models, Rectifier Circuits, Input Filtering Capacitor, Voltage Multiplier Circuits, Limiter and Clipper Circuits, DC Clampers and Peak-to-peak Detectors, Zener Diode, Zener Diode Rectifier, Photoelectric Devices, Collector-Emitter Junction, Transistor Characteristics of common-emitter, Base Bias, LED Dirver, Establishing a Stable Q-point, PNP Transistor Biasing, Transistor Biasing, Coupling and By-Pass Capacitors, AC Emitter Resistance, Common-Emitter Amplifier, Other Common-Emitter Amplifiers, Cascaded Common-Emitter Amplifiers, AC Load Line, Emitter Follower, Class B Push-pull Amplifiers, JFET Characteristic Curve, JFET Biasing, JFET Amplifier, VMOS Circuit, Differential Amplifier, Operational Amplifier, Non-inverting Feedback, Negative Feedback.

电子学实验( S0704)(1，1)/应用电子学实验( S0472)(1，1)电压源和电流源、戴维宁定理、故障排除、二极体特性曲线、二极体近似模型、整流电路、电容-输入型滤波器、倍压电路、限制器电路和峰值检测电路、直流定位器与峰对峰检测器、齐纳二极体、齐纳二极体整流器、光电元件、集射极接面、集极特性曲线、基极偏压、LED驱动器、建立一个稳定的工作点 Q 、 PNP 电晶体偏压、电晶体偏压、耦合及旁路电容、交流射极电阻、共射极放大器、其他 CE 放大器、串接共射极放大器、交流负载线、射极随耦器、 B 类推挽式放大器、 JFET 特性曲线、 JFET 偏压、 JFET 放大器、 VMOS 电路、差动放大器、运算放大器、非反向电压回授、负回授。

When gets in the home, dismounts all camouflage, orfelt perhaps unusual lonely, I continuously all am not happy camper!

等到回到家里，卸下一切的伪装，还是感到异常的孤独，或许我一直都不是个快乐的人吧！

From the view of power management, this thesis begins with a deep investigation of Low Drop-Out voltage regulator's application and characterizations.

本文从电源管理的角度出发，深入调研了低压降电源调节器(Low Drop-Out)的应用与特性。