查询词典 tox

Box toe, counter ,and shank.examine tox boe and counter.

套头，套后及铁心，检查套头及查后，弯折鞋子以确定装置铁心。

His tox screen on admission showed a massive amount of chloral hydrate.

他的毒理检验显示大量的水合氯醛

This is your version of a tox screen.

这就是你检测的办法

With over 1.000.000 pages of in-depth, secret revealing exclusive knowledge you want tox download - Right Now!

超过000000页：：在深入、专有知识秘密揭示你想要下载-现在！

Your TOX screen came back positive for...

你的总氧化剂结果阳性。。。

I'll run a tox screen.

我去做毒理检测

Her tox screen's clean, but she's still delusional.

她的毒理测试什么也没有但是她依然产生幻觉

Is that why you also ran three tox screens.

你还为此做了三次毒理检查吗？

His tox screen was negative for illegal drugs.

他的血毒理分析显示为阴性

On CHE programming, the higher coupling ratio of control-gate makes the higher electrical field across TOX in Si than Ge. Also because of the continuity of displacement vector, the higher permittivity of Ge would cause the lower electrical field at interface. We get the higher gate current in Si than Ge. On CFN programming, the higher CT in Ge would show the higher electrical field across TOX. However, the parameters of F-N tunneling are calculated and showing the gate current in Si is larger than Ge. On the same mechanism of F-N tunneling erasing, the parameters also show the higher electrical filed of Si would cause the higher erasing speed. The continuity of displacement vector also explains the higher electrical field at interface for F-N tunneling programming/erasing.

从通道热电子穿隧写入的模拟结果发现，由於控制闸极耦合电容的影响，加上电位移向量在半导体-氧化层界面连续的观念，拥有较高介电常数的锗反而得到较小的等效电场，决定了穿隧电流反倒是不如矽基板；在F-N穿隧写入的模拟中，即便锗基板拥有较大的总耦合电容，使得在浮闸的耦合电压大於矽基板，但仍旧是半导体-氧化层界面的电场扮演了穿隧电流的决定性因素，得到的结果仍旧是矽基板的写入速度高於锗基板；在F-N抹除的模拟中，运用与F-N写入相同的数学模型，仍旧看见在锗基板上未能得到速度上的改善，同时用数学的计算展示了合理的解释。

They weren't aggressive, but I yelled and threw a rock in their direction to get them off the trail and away from me, just in case.

他们没有侵略性，但我大喊，并在他们的方向扔石头让他们过的线索，远离我，以防万一。

In slot 2 in your bag put wrapping paper, quantity does not matter in this case.

在你的书包里槽2把包装纸、数量无关紧要。