查询词典 toll-gate

Finally, the paper studies the application of reinforced cushion in melioration on building groundwork relying on the projects of Chao Tian City Gate and Lin Zhang City Gate.

最后，以泉州市朝天门和临漳门城楼的工程实例为依托，总结分析加筋垫层在处理建筑物地基中的应用情况。

Get on bus at Tianwai Village to the Midheaven Gate, walk or by Cableway via Cloud-Cut Sword, Yunbu Bridge, Five-Men Pine, Eighteen Bending Stops, South Gate of Heaven to the peak scenic area which includes Sky Street, Viewing-Wu Saint Ruins, Bixia Temple (5 yuan for every person, pay by yourself), Tang Stone Inscription, Jade Emperor Temple, Gongbei Rock etc..

D2、早餐后游览五岳独尊泰山：天外村乘车赴中天门，步行或缆车登山，经斩云剑、云步桥、五大夫松、十八盘、南天门至岱顶景区：天街、望吴胜迹、碧霞祠（5元/人，门票自理）、唐摩崖石刻、极顶——玉皇庙、拱北石等，晚住莱芜。

Opens the gate, music resounds, closes the gate music to stop the musical box the function: What the musical box is most common is 18 sounds and 30 sound 2 kinds!

打开门，音乐响起，关上门音乐停音乐盒的功能：音乐盒最常见的是18音和30音2种！

Once we can build an inverter, building an AND gate is easy just invert the outputof a NAND gate.

一旦我们可以建立一个转换，建立一个AND是很简单的，只需要转换NAND的输出。

The difference between the NOR and OR gate, on the one hand, and the NAND or AND gate, on the other, is to be noted.

为了减少代码在传输、接受以及其他处理过程中出现的错误，可以利用奇偶校验法来检查错误。

Much the same as the procedure for making a NOR gate behave as a NAND, we must invert all inputs and the output to make a NAND gate function as a NOR.

大致相同的程序让或非门表现为一个与非门，我们必须颠倒所有输和输出，使一个与非门的作为或非门。

NAND gate 403 is a logic gate that performs a NAND Boolean logic function on the UP and DN signals to generate a voltage signal VIN.

NAND门403是对UP和DN信号执行NAND布尔逻辑功能以生成电压信号VIN的逻辑门。

To prove that we can construct any boolean function using only NAND gates, we needonly show how to build an inverter, AND gate, and OR gate from a NAND (sincewe can create any boolean function using only AND, NOT, and OR).

为了证明使用NAND门我们能够构造任何布尔函数，我们只需要展示如何从一个NAND建立一个转换，与门，或门（因为我们可以用AND，OR，NOT建立任何布尔函数）。

Moreover, the optimum thickness of ONO stack performs excellently for almost no gate disturbance, no read disturbance and long data retention. Even after 10K P/E cycling stress, the error bit wouldn't happen in such device's sensing window. As a result, the WSG-SONOS memory with split-control gate in NAND array is very adapted for the 2 bit/cell mode with multi-level operation.

此外，利用最佳化的ONO厚度可以达到非常优秀的抗闸极扰动、抗读取扰动与长时间资料保存的能力；即使经过一万次的重覆写入/抹除的操作后，仍能够保有原始的临界电压窗差值并在位元感测区间的范围之内，而不会有位元判断错误的结果发生。

For the first time, we propose the novel Wrapped-Select Gate SONOS memory with split-control gate in NAND architecture. The memory process is not only simple but also compatible with embedded non-volatile memory in conventional standard logic CMOS products. In this thesis, we demonstrate the physical mechanism and elimination of 2nd bit effect in 2 bit/cell operation.

我们提出一种新颖的分离式闸极结构於含有隐藏式选择性闸极之半导体─氧化层─氮化矽─氧化层─半导体记忆体元件於NAND电路阵列结构上，此记忆体元件不仅制程简单也能符合一般数位逻辑CMOS产品中的嵌入式非挥发性记忆体应用。

Hanna: That's over now, isn't it?

都结束了，对吗

You must be ill. You look so pale.

你一定是病了，你的脸色苍白。