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threshold voltage相关的网络例句

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与 threshold voltage 相关的网络例句 [注:此内容来源于网络,仅供参考]

When a lightning current or over-voltage reaches the threshold value of the zinc oxide resistor, the resistance of the zinc oxide quickly breakover and bleed the lightning current to the earth, thus protecting the circuit.

当有雷电流或者过电压达到氧化锌电阻的阀值时,氧化锌电阻迅速导通,将雷电流泄放到大地,从而对电路起到保护作用。

34C02M8/LM8 Pinout: Short Circuit Current Output Current Transition Time Maximum Transmission Rate 1,000 RS-422 RECEIVER Common Mode Range Differential Input Differential Input Threshold-0.2 Input Voltage Hysteresis30 Input Resistance3 TTL Output Level V V2.4 Maximum Receiving Rate1,000 Short Circuit Output Current POWER REQUIREMENTS V =+12V, 10% V =+5V, 10% V =-12V, 10% ENVIRONMENTAL Operating Temperature -CS0 -MR-55 Storage Temperature-65

34C02M8/LM8引脚说明:短路电流输出电流过渡时期的最大传输速率1000的RS - 422接收器差分输入共模范围差分输入阈值0.2输入电压Hysteresis30输入Resistance3 TTL输出等级V 2.4版本的最大接收Rate1,000短路输出电流电源要求ν= 12五,10%的V =+5 V的,10%的V =- 12V的,10%,环境工作温度- CS0 -议员- 55存储温度- 65

Due to its good effect in the reservation of information of signal abrupt change, mathematical morphology is often applied in the detection and location of short-term power quality disturbance, however, there is still a defect of invalid detection existing in partial detection methods based on mathematical morphology while some zero-crossing disturbances are detected. In this paper three mathematical morphology based disturbance detection and location methods, i.e., the method based on first-order derivation and morphological gradient, the method based on morphological gradient and soft threshold processing and the method based on dq decomposition and top-hat transform, are analyzed, that is, by means of simulation the adaptability of these methods in the analysis on the signals of voltage sag, voltage swell and electromagnetic transient oscillation is compared.

数学形态学因其在保留信号突变点信息方面有很好的效果,因此常用于短时电能质量扰动的检测和定位,但基于数学形态学的部分方法仍存在对某些过零点扰动检测失效的缺点,文章分析了3种基于数学形态学的扰动检测和定位方法,即基于1阶求导和形态梯度的方法、基于形态梯度和软阈值处理的方法、基于dq分解和高帽变换的方法,通过仿真比较了3种方法在分析电压暂降、电压暂升、电磁暂态振荡等信号方面的适应性,结果发现基于dq分解和高帽变换的方法在检测过零点扰动时具有很好的效果,因此选取这种方法对实测扰动数据进行了检测和定位分析。

Requirement for arc voltage during opening of field breaker is higher and higher, for de-excitation with varistor ,generally adopted for large hydraulic generator. In fact, E.M.Fof field winding is required higher than threshold of varistor during opening of field breaker.

大型水轮发电机通常采用的非线性电阻灭磁的方法,对灭磁开关的开断弧压要求愈来愈高,其机理是要求开关开断时,磁场绕组的自感电势大於非线性电阻的残压。

This peak voltage setting becomes the threshold used for calculation of the voltage response curve for the instrument.

这个峰值电压设置为阈值电压,用来计算仪器的电压响应曲线。

It is found that STI corner is the most primary leakage region in high voltage devices after the sub-threshold characteristics and TEM cross-sectional images of the devices are investigated.

在研究了器件的亚阈值特性,并结合TEM的切片结果后,发现了高压器件产生漏电主要区域是在STI corner。

Third, the results also revealed that the toddlers'rhythmicity, intensity of reaction, quality of mood and the parenting style of punishment were always lead to the incidence of the deregulation incidence of social-emotional development. In the end, the binary logistic result told us that toddlers'gender, age, apporoach and withdrawal, persistence, threshold of responsiveness, the parenting of refused, encourage independence and explore and low-voltage-induced all can lead to the incidence of the competence.(2) The degree of effect caused by genetic and environmental factors on the toddlers'social - emotional development were revealed by the structural equation model.

研究结果1。两分类logistic回归分析发现,影响中国幼儿情绪社会性外显问题的生物遗传及环境因素有年龄、性别、活动水平、趋避性及适应性,母亲文化程度、拒绝及惩罚的家庭教养方式;影响内隐问题的遗传及环境因素有年龄、活动水平、趋避性、情绪本质及拒绝、关注与保护、控制施压的家庭教养方式;影响失调问题的遗传及环境因素有节律性、反应强度、情绪本质及惩罚的教养方式;影响能力问题的遗传及环境因素有性别、趋避性、坚持性、反应阈、家庭收入、接纳、拒绝及低压诱导的家庭教养方式。2。

Because energy distribution of interface trap is very important to study degradation of gate oxide we proposed two methods-- sub-threshold swing shift method and sub-threshold gate voltage shift method based on the relaxation spectral technique.

由于界面陷阱的能量分布在超薄栅氧化层退化研究中非常重要,因此基于弛豫谱技术我们提出了两种新的方法(亚阈摆幅漂移方法和亚阈栅电压漂移方法)来提取界面陷阱的密度及能量分布。

Experimental results show that the devices with higher Ge content exhibit excellent properties due to the better carrier confinement. In additional, we give a systematic study of the relations between threshold voltage, subthreshold swing and different gate length.

由实验的结果显示出当具有较高锗含可使载子在通道传输时被局限在形变层内,此外,对界电压、次界摆幅等电性与同闸极长之关系亦给出系统化的讨。

The output and transfer characteristic have small change after soft breakdown as the degradations of drain current and threshold voltage is continuous.

在软击穿后,输出特性和转移特性只有小的改变。在软击穿发生时,漏端的电流和域值电压的退化是连续变化的。

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