查询词典 threshold voltage

The good performance is related to the low work-function metal, Ytterbium, makes the threshold voltage lower successfully and small equivalent oxide thickness by high κ dielectric material.

这些良好的特性是因为拥有低功函数的镱可以成功的将临界电压降低，还有高介电系数介电层闸极可以得到较薄的等效氧化层厚度。

pseudomorphic high electron mobility transistors ; enhancement-mode ; depletion-mode ; threshold voltage ; GaAs

国家自然科学基金(批准号：60276021)；国家重点基础研究发展规划(批准号：G2002CB311901)资助项目

Strained Si PMOSFET with Polycrystalline SiGe gate can enhance its performance for improvement of carrier mobility and turnable threshold voltage without impurity scattering to carrier.

应变Si pMOSFET以多晶SiGe做栅，既能提高空穴的迁移率，又能调节器件阈值电压而不会对载流子引入杂质散射，因而提高了器件性能。

By analyzing standard deviations of parameters' differences, it is found that the interdigitated method is indeed superior than the original. Besides, Vth and Muo are inversely proportional to the interdigit's finger numbers, especially the threshold voltage. Therefore, a model is proposed to predict the performance of the interdigitated method, which has high accuracy with the real data.

藉由分析元件参数差值的标准差，我们发现叉合方法比传统方法具有更优良的特性，其中位障电压与迁移率差值的标准差与叉合数目呈现反比，特别是位障电压，因此我们提出一个公式以准确预测叉合方法的效能。

The non-uniform channel impurity, the non-equal surface potential for the changing of balance energy band and the gate capacitor by the edge effect is thought about; the mathematics expression of the deep sub-micron non-uniform channel DMOS threshold voltage model is obtained.

计及沟道区杂质的二维非均匀分布、平衡态能级对沟道各点表面势的影响和栅电容的边缘效应，给出深亚微米DMOS的阈值电压二维解析式。

It was concluded that charge injection and recombination would restrict the field electron emission, and increase the threshold voltage of flashover and decrease its scattering.

发生在绝缘体表层的电荷注入和复合过程能够在一定程度上抑制场致电子发射，从而提高沿面闪络电压，并降低闪络电压值的分散性。

Gate recess is widely used in III-V compound transistors to modify the threshold voltage and optimize the device performance through adjusting the gate to channel distance.

闸极掘入是改变闸极与电流通道的距离而使截止电压改变，进而使电晶体的表现最佳化，闸极掘入的技术已经广泛的应用在三五族半导体里。

Enhanced threshold voltage shift and transconductance reduction were observed after CHE stress for the nitrided devices.

在通道热电子压迫测试之后，可以发现更严重的临界电压偏移与转导值降低现象。

It indicates that the changes of threshold voltage and the gradient are related to the display stability of LCD,whose display contr...

经分析得出：在60～100 Hz区间，所测试的液晶光阀陡度随频率变化相对较小，显示特性较稳定。这为设计液晶显示器件，提高其显示稳定性提供了依据。

FIG. 8 depicts an example set of threshold voltage distributions in a multi-state device with two-pass programming from the erased state to a programmed state.

图8描绘多状态装置中关于从经擦除状态到经编程状态的双通过编程的阈值电压分布的示范性集合。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。