查询词典 threshold voltage

The formulas and simulation results related to the adjustable upper and lower threshold voltage ar...

文中分析了该电路的工作原理，并利用HSPICE仿真验证其高精度以及高稳定性。

Depletion width is analyzed and the expression of the 2D threshold voltage model of DMOS devices is given.

提出了DMOS器件的二维阈值电压模型，分析了耗尽层宽度的变化，并得到了模型的数学表达式。

A good fit on the threshold voltage shift prediction is obtained and confirms our theory.

此模型与临界电压飘移有良好的吻合因此能够证实我们的理论。

However, mobility degradation and threshold voltage instability are the mainly concern.

然而，在高介电常数的介电质中所产生的迁移率衰减与临界电压的不稳定都是其主要的存在问题。

The result shows that the threshold voltage decreases with the increasing Ge Profile and the strained silicon thickness.

研究结果表明阈值电压随应变Si膜中Ge组分的提高和变Si膜的厚度增加而降低。

Regarding reliability issues of devices, we focus on the effect of nitrogen implantation on the shift of threshold voltage.

在可靠性方面，我们著重在氮布植对於起始电压漂移的影响。

This is achieved by adopting a replica transistor with the same threshold voltage as the sampling transistor.

这是通过采用一个与采样MOS开关具有相同阈值电压的"复制"开关得以实现的。

In order to reduce the threshold voltage, it is one of the solutions to use the fully silicided gate.

为了降低临界电压，其中一个方法就是使用完全矽化闸极。

The strength of the reflected light is measured and suitable threshold voltage is set to ensure the reliability and precision of the system.

对反射光强进行测量，以此为依据设置阈值电压以保证系统的可靠性和准确性。

Specifically, we found that at least two mechanisms are responsible for the negative threshold voltage shift detected by monitor transistors.

特别的是，我们在研究过程中，利用此一结构发现了两种会造成临界电压漂移的机制。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。