查询词典 threshold voltage

Based on the 2-D distribution of channel impurity, the distribution of 2-D electric field and 2-D interaction potential, which is caused by the interaction between the ionized impurity in the depletion layer and radiation induced positive spatial charge, is analyzed by using image charge method. Resolving Poisson equation, the mobility expression of N-type and P-type non-uniform channel MOS and the mathematics expression of the threshold voltage model of DMOS are obtained.

基于沟道杂质的非均匀分布，借助镜像法导出非均匀沟道辐照正空间电荷和沟道中电离杂质的二维场及其作用，给出非均匀沟道DMOS器件辐照正空间电荷与沟道杂质的二维互作用势。

Quantum effects in Si n-MOS inversion layer at high substrate concentration. Solid-State Electron, 1990, 33(12): 1581～15854 Van Dort M J, Woorlee P H, Walker A J, et al. Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFET's.

结果表明：在高衬底掺杂浓度时，即使在弱反型区量子化效应也能导致载流子分布和电流产生明显的降低(例如： 1.5×1018 cm-3时，可降低一个数量级以上)，从而导致开启电压的升高。

A continuous input pulse train triggers the monostable circuit, and a control signal modulates the threshold voltage.

连续的输入脉膊火车引起单稳线路，而且控制信号调整门槛电压。

We also prove the degrading mechanism is independent of the effect of parasitical resistance and explain the change of the threshold voltage and mobility by activation energy extraction under mechanical strain.

我们也做了处於挠曲状态下寄生电阻与活化能的参数萃取分析，证明了应力挠曲所造成的劣化效应与寄生电阻无关以及从活化能的改变上进一步地解释了电子迁移率和临界电压的劣化情形。

Both forming gas and SiN capping can effectively passivate interface states, and result in threshold voltage difference.

氮氢混合气体退火和具有氮化矽覆盖层的元件都可以有效地修补界面的缺陷，但是二者具有不同的临界电压。

In this paper,the threshold voltage,the peak of proportional difference and the interface trap density of NMOSFET are extracted from the output characteristic by the proportional difference method.

在本文中，用比例差分方法从NMOSFET器件的输出特性提取了阈值电压、输出特性的比例差分的峰值和界面陷阱密度。

The relationship between the threshold voltage and the peak of proportional difference,and between the interface trap density and stress time are also acquired.

得到了阈值电压和比例差分峰值，界面陷阱密度和应力时间的关系。

Meantime, the transparent ZnO electrode reduced the spatial separation between the liquid and the underlying electrode, and effectively photoelectric cooperative wetting occurred, with the surface changing from low adhesive to adhesive, which is propitious to develop in this field, such as the feasibility of the patterned photoelectric cooperative wetting, namely, applying a bias lower than the electrowetting threshold voltage, photoelectric cooperative wetting can be realized only at the illumination site, i.e., patterned site.

这一研究有利于拓展这一领域的发展，为开发新型的协同响应的功能浸润性界面材料提供新的思路。同时，浸润性从超疏水到亲水转变过程中，表面从低粘滞状态变为粘滞状态。这一过程为实现光电协同控制的图案化浸润提供了可能性，即在低于电浸润阈值电压的条件下，通过图案化的光照来实现液体图案化浸润。

Patterned wettability transition by photoelectric cooperative and anisotropic wetting was demonstrated on this surface, namely, applying a bias lower than the electrowetting threshold voltage, photoelectric cooperative wetting can be realized only at the illumination site, i.e., patterned site.

在这种薄膜表面，实现了一种通过光电协同控制的各向异性浸润作用来获得液体的图案化浸润的方法，即在低于电浸润阈值电压的条件下，通过图案化的光照来实现液体图案化浸润。超疏水复合氧化锌纳米棒阵列为图案化浸润提供了必要的各向异性浸润环境。

The results indicated that when the devices are exposed to ambient air, with increasing exposure time, both the saturation current and the threshold voltage increased obviously.

结果表明，当器件曝露在空气中时，随着曝露时间的增加，器件的饱和漏电流明显增大，阈值电压逐渐增加。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。