查询词典 threshold voltage

He Cross-Talk problem of big capacity IPSLCD is same to TNLCD, the TFT method is a effective way to solve this problem, but the design of electrode and store capacity affected the aperture ratio and threshold voltage.

FT-IPS电极设计和存储电容设计对于器件的驱动电压和开口率有很大影响，本文从降低器件的驱动电压和扩大开口率的角度出发，对TFT-IPS电极设计进行优化设计，并设计了新型存储电容，使得开口率提高了22％。

The threshold voltage's shift versus the dose rate was analyzed on this device.

分析了该电路的阈值电压随辐射剂量率的变化关系。

Based on the analysis of operation mechanism and development of the charge pump,as well as the factors limiting its efficiency and speed,a new method using triple-well structure and charge transfer switches is suggested to eliminate threshold voltage drop and body effect.The clock driving circuit is specially optimized to lower output resistance,and speed up the response.

在分析电压泵工作原理和结构演变并指出当前实现方法在驱动和响应上的制约因素的基础上，结合目前先进Flash Memory工作电压和工作要求，提出了结合三阱工艺和CTS方法以消除体效应和阈值电压降从而提高性能的四相位电荷泵设计方法，专门对时钟驱动进行的优化，提高了响应速度。

Different aspects of the CO2 laser were studied including the variations of excitation threshold voltage and output power with discharge current.

通过研究CO2激光器的不同方面，如激励门电压和输出功率等，发现它们随着放电电流的变化而变化。

It is found that the change of threshold voltage value fits in exponential law with absorbed dose,which is caused by the effect of space charge and interface charge.

产生这种现象的原因是场效应管氧化物中的空间俘获电荷与吸收剂量近似成线性变化，对阈值电压变化和吸收剂量有近似线性的改变；而界面态对空间电荷有补偿作用，其对阈值电压的改变与吸收剂量有近似成二次方的关系。

Our results showed that Fick's second law can successfully explain the variations of threshold voltage.

不论是在有无偏压实验条件下，气体扩散模型可以成功解释氨在五苯环薄膜中的扩散行为。

This applicationmodulates the threshold voltage and, thereby, the time delay, of a free-running oscillator.

这样的应用调节阈值电压，从而调节自激振荡器的延迟时间。

The experimental results show that this instable drift of threshold voltage induced by slow interface states is repeatable at each power-on measurement.

结果表明，该种由慢界面态造成的阈电压变化在每次开机测量下具有重复性。

Base on the threshold voltage model presented, an intrinsic drain current model in strong inversion region is developed, which can describe the short-channel effects such as DIBL and charge-sharing effect well, and give special considerations for mobility, velocity saturation, channel length modulation and quantum effect. Based on the front interface surface potential model, a formula of unified inversion charge is derived, and an intrinsic drain current model in middle inversion region is developed.

利用所提出的深亚微米FD器件正、背界面表面势模型，建立了一个能够完整描述深亚微米FD器件本征亚阈漏电流特性的模型，能够准确地描述DIBL效应和背沟道漏电效应；利用所提出的阈值电压模型，建立了深亚微米全耗尽器件的本征强反型电流模型，很好地描述包括DIBL效应、电荷分配效应在内的小尺寸效应，对迁移率、速度饱和效应、沟道长度调制效应和量子效应进行了特别的考虑；利用所提出的深亚微米FD器件正界面表面势模型，推导了统一反型层电荷公式，建立了深亚微米FD器件的本征中反型漏电流模型。

This method can obtain the threshold voltage,mobility of small-dimensional devices and velocity saturation factor, while the resultsobtained by this method includes the short, narrow channel effects, the degradation ofchannel mobility due to gate voltage, velocity saturation effect and the seriesresistance of source terminal.

该方法可提取出小尺寸MOS器件阈值电压、迁移率和速度饱和因子，从而反映出小尺寸器件的短、窄沟效应，迁移率退化效应，速度饱和效应及源漏电阻对器件特性的影响。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。