查询词典 threshold voltage

The main work can be summed up as follows: Firstly, we studied the thermal-field properties of VCSELs, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. Secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of VCSELs, and then studied the influences of the oxide-confining region with different position or thickness, and the different sizes of the gain-guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. Thirdly, we realized the coupling of electricity, optical and thermal-fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, Fermi levels and optical-field. Finally, we gave the equipotential line distributions with considering N-DBR and double oxidized-confining regions, and analyzed theinfluences of N-DBR and double oxide-confining regions on the distributions of the current density, carrier concentration, temperature and optical-field.

具体工作可以概括如下：首先，研究了VCSEL的热场特性，分析了电流扩展，材料参数和工作条件对于温度分布的影响；其次，从电极电压入手，计算出激光器中的等势线分布，并对不同深度处的电压和电流分布进行比较，研究了高阻区的不同位置和不同厚度、限制层和出射窗口半径的大小对电流密度、载流子浓度和温度分布的影响；再次，实现了电、光、热耦合，求出了阈值电压，计算了不同偏置电压下的电流密度分布、载流子浓度分布和热场分布，分析了温度和载流子浓度变化对折射率、费米能级和光场的影响；最后，给出了考虑N-DBR和双氧化限制层时激光器中的等势线分布，分析了N-DBR和双氧化限制层对VCSEL电流密度、载流子浓度、温度和光场分布的影响。

A threshold voltage of the first memory cell is higher than a first verifying voltage.

第一存储单元的阈值电压高于第一校验电压。

A threshold voltage of the second memory cell is higher than a first verifying voltage.

第二存储单元的阈值电压高于第一校验电压。

This test apparatus is able to measure the drain-source breakdown voltage, static drain-source on resistance, gate threshold voltage, forward transconductance and input capacitance of power MOSFET accurately, which has been applied in practice.

所设计的功率MOSFET测试仪可以进行功率MOSFET的耐压、沟道电阻、开启电压、跨导及输入结电容几个参数的精确测量，并已实用化。

Furthermore, the threshold voltage and subthreshold swing shift of a-Si:H TFT under DC operation is discussed and measured.DC voltage stress causes a constant Vt shift ,but subthreshold swing isn't change much.

另外，考量元件稳定度的加速实验，尝试分析偏压时间对於临界电压偏移量以及次临界摆幅的影响，结果显示长时间的直流偏压只会对临界电压偏移量造成影响，对於次临界摆幅的影响很小。

The output voltage and the detector threshold voltage can be set individually for each IC by laser trimming.

输出电压和阈值电压检测器可以设置为每个单独的激光微调集成电路。

The results show that for unoriented ZnO nanowire thin films, the electric field intensities corresponding to the turn-on voltage and threshold voltage of field emission are 4.7 and 7.6V/μm, which are much lower than those of aligned nanowire arrays.

结果显示，非取向生长的ZnO纳米线薄膜场发射的开启电压和阈值电压所对应的场强分别为4.7和7.6V/μm，场增强因子达10^3量级，具有较阵列生长的ZnO纳米线更为优异的场发射能力。

The effective channel mobility of4H-SiC MOSFETs is increased significantly by high temperature anneals in nitric oxide.4H-SiC MOSFET with hydrogen postoxidation annealing has a lower threshold voltage of3.1V and a wide gate voltage operation range in which the inversion channel mobility is more than100cm 2 /Vs.

SiC的雪崩击穿电场是Si的十倍，因此，理论上SiC单极功率器件的导通电阻可以比Si器件的低400倍，但在6H-SiCMOS结构中，由于反型层的电子迁移率较小，沟道迁移率测量值仅为40～50cm2/Vs，远远低于6H-SiC的体迁移率400cm2/Vs眼1熏2演，限制了SiC功率MOSFET的导通电阻Ron。

A novel MOS-only voltage reference is presented, which is based on the threshold voltage difference between p-type and n-type MOSFETs. Its precision is improved by the cancellation of the process variation.

提出了一种新的纯MOS结构的基准电压源，它利用pMOS和nMOS的阈值电压差来抵消工艺偏差，提高了基准的精度。

A novel MOS-only voltage reference is presented, which is based on the threshold voltage difference between p-type and n-type MOSFETs. Its precision is improved by the cancellation of the process variation.

提出了一种新的纯MOS结构的基准电压源，它利用PMOS和nMOS的阈值电压差米抵消工艺偏差，提高了基准的精度。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。