查询词典 threshold voltage

Voltage of 555IC fanout or assistant fanout feeding back to input for voltage apron string,forms deferent DS feedback,and holds threshold voltage inside two comparators to float along with.

把555IC输出端或辅助输出端的电压反馈到电压控制输入端，形成输出的数字信号反馈，使内部2个比较器的阈值电压随之浮动。

The experimental results have shown that the impact of TFT threshold-voltage variation on the biasing circuit can be reduced from 30% to 5% under biasing voltage of 3 V.

因此，在第六章中，本论文提出具有临界电压补偿功能之偏压电路设计技术，此技术可以大幅降低元件的变动对偏压电路的影响，提高类比电路在玻璃基板上之可行性。

The brownout detect comparator has a detect threshold voltage of 1.21 V. This pin senses the voltage of the bulk capacitor through a resistor divider network to determine the brownout event.

掉电检测的比较有一个电压检测阈值的1.21五，该引脚通过一个电阻分压器感官网络上的大电容电压来确定掉电事件。

We got high drive current, low threshold voltage and low sub-threshold slop to improve the performance of device obviously.

将可得到高驱动电流、低临界电压和低次临界斜率，大大提升了元件的特性。

These materials have excellent chemical and thermal stability, high melting point, high thermal conductivity, high breakdown voltage and large carrier mobility rate especially the smaller electron affinity and potential or even a negative electron affinity, and the situation has greatly reduced the market launch of the threshold voltage, therefore, Field emission of such material will have a very vast potential for development and application prospects.

这些材料具有良好的化学与热稳定性、高熔点、高热导率、高击穿电压及大的载流子迁移率，特别是较小的电子亲和势甚至是负的电子亲和势，大大降低了场发射的阈值电压，因此，这类场发射材料将有着极为广阔的发展潜力及应用前景。

From this model, we can find how the channel length, channel doping concentration, the thickness of silicon film and gate oxide influences the threshold voltage, and the variation of threshold voltage is independent on back-gate bias.

从模型中可以容易地分析阈值电压与沟道浓度、长度、SOI硅膜层厚度以及栅氧化层厚度的关系，并且发现△V与背栅压的大小无关。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

After hot carrier stress, devices were evaluated by using positive bias temperature instability test. With different trends in the time evolution of threshold voltage shift and sub-threshold swing degradation, it is found that electron trapping in the HfO2 is the major reason for the threshold voltage variation. Compared to control devices, devices with fluorine and nitrogen exhibit good passivation at the interface. Devices were measured at an elevated temperature.

在热载子效应后，接著进行正偏压温度不稳定的量测方法，从随时间变动的临界电压以及次临界摆幅，发现临界电压的变动趋势与临界摆幅变动趋势不符合，表示二氧化铪的原生缺陷补捉是造成临界电压变动的主因，而临界摆幅的变动也可得知有氟，氮处理元件具有比较好的介面可靠度。

For example, the threshold voltage of the driving TFT will be ununiform over the whole screen or the output current is sensitive to threshold voltage shift of the driving TFT.

AMOLED显示屏是在简单矩阵结构的基础上，为每个OLED像素配置了薄膜晶体管和信号存储电容。

Our experimental results shown that threshold voltage related hot only with the number of hecical turns ,hut a boundary-induced contraction or dilatation of the pitch also has a strong influence on it, at each regin, belong to a fixed n,the threshold voltage increases as the contraction of the pitch and the thieshold volage decreases as the dilatation of the pitch.

实验结果表明：阀值电压不仅与螺距数有关，而且与边界条件引起的螺距收缩和伸展有关，在螺距数不变的情况下，螺距的收缩使阀值电压提高，而螺距的伸展使阀值电压减小。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。