查询词典 thin layer

Want to know, the person's skin can be divided into three-layer of cuticular, dermal, subcutaneous tissue about; All maintaining the limits that tastes generation action is in only cuticular layer, in thin thin divided in the cuticular layer that is less than one centimeter 4, quintuplicate cell, be located in the bottommest for base layer, full vivid cell can grow ceaselessly reach dissension, slowly when upgrade is advanced, the cell can squash gradually, at the same time evaporate, nutrient, until most the corneous layer outside, already was flowing do not have the corneous layer cell of life however.

要知道，人的肌肤约可分成表皮、真皮、皮下组织三层；所有保养品产生作用的范围都仅在表皮层，在薄薄不到一公分的表皮层中分了四、五层的细胞，位于最底部为基底层，布满的活细胞会不断生长及分裂、慢慢往上推进时，细胞会渐渐变扁，同时失去水分、养分，直到最外的角质层，就已是平滑却没有生命的角质层细胞了。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

RESULTS: The following changes were found under light microscopy in keratoconus:thin epithelium and stroma,local rupture or destruction in basement membranes and Bowman"s layer,basal cell swollen,stroma disarrangement,ruptures or folds in the Descemet"s membrane and thin endothelium layer.

结果 光镜观察结果，圆锥角膜上皮层、基质层变薄，基底膜及前弹力层局限性断裂或破坏，上皮基底细胞水肿，角膜基质排列紊乱，后弹力膜皱褶或断裂，内皮细胞变薄。

The invention relates to an organic thin-film transistor of three-layer composite film insulated gate which comprises a substrate (1), a metal electrode (2), a organic semiconductor layer (6), a source/leakage electrode; and also comprises: a low dielectric constant polymer layer (3), a high dielectric constant oxide layer (4), a low dielectric constant polymer layer (5), three-layer composite film insulated gate is composed of the (3) layer, the (4)layer and the (5) layer.

本发明涉及三层复合膜绝缘栅的有机薄膜晶体管，包括衬底(1)，金属电极(2)，有机半导体(6)层，源/漏电极(7)；还包括：低介电常数聚合物层(3)，高介电常数氧化物层(4)，低介电常数聚合物层(5)，所述的(3)、(4)和(5)层构成三层复合膜绝缘栅。

Design the structure of high performance Low-E film including its material and thickness of every layer according to basic optical theory. Carry out an innovative work to calculate its optical performance by characteristic matrices and optical admittance. Compare the results with those we get by traditional measurement.3. Prepare Low-E films with RF magnetron controlled reactive sputtering. The result shows that in the visible region (380nm-780nm), the highest transmittance is 82.4% while the average value is 75%. In the NIR region (780nm-2500nm), the average transmittance is 16.2%. These characters can fit the demand of the glass used in architecture and cars, and also in other applications.4. We novelly use the material Titanium as protective layer to solve the problem that Ag layer would disappear when depositing the second TiO_2 layer. As the protective layer, Ti does not increase the number of targets so as to lower the costs. The thickness of the protective layer Titanium is adjusted by controlling of sputtering time. Results shows the Low-E films get the best optical character when the sputtering time of Titanium is 20 seconds5. We novelly proposed a new transmittance quality factor Q=_·(?_-__ to evaluate the performances of Low-E films, which makes it easier to judge the qualities of Low-E film.6. The photocatalysis of Titanium dioxides is researched and introduced into Low-E films. Sb-doped TiO_2 thin films are prepared. Its photocatalysis and hydrophilicity are measured.

论文的工作主要有：1、总结了低辐射薄膜的制备方法，性能，以及国内外最新研究进展和应用，并对两种类型的低辐射薄膜进行了比较。2、从光学基本理论开始，设计了离线低辐射薄膜的结构，包括每一层的材料和厚度，并创新性的用特性矩阵和光学导纳理论计算了该离线膜的光学性能，利用软件对其进行了仿真，与实际制备的薄膜所测量的性能相比较。3、完成在实验室仪器上制备低辐射薄膜，掌握其工艺条件，解决了超薄金属膜的制备问题，所制备的低辐射薄膜在可见光区(380hm-780hm)最高可达82.4%，平均透射率为75%；在近红外区(780nm-2500nm)的平均透射率为16.2%，其性能达到建筑物幕墙玻璃，汽车前挡玻璃等应用标准，并为进一步的大规模生产打下基础。4、针对中间银层在镀上层膜时易被氧化这一工艺难题，本研究创新性的提出用Ti膜作为保护膜，没有增加新的靶材，提高了生产效率，并节约了生产成本。

In the paper, the writer analyses, discusses and researches the factors which influent the seismic reflection features of all kinds of thin-bedding medium above and, firstly, sums up systemically the laws by which the parameters of the thickness of thin-bedding, the thickness of single layer in the thin-bedding group, the thickness of minor structure, the number of layers in the thin-bedding group, type of incident wavelet, main frequency and decay coefficient influent thin-bedding 〓smic reflection features.

作者在论文中还对影响上述各种薄互层介质地震反射特征的因素进行了详细地分析讨论和研究，首次较全面系统地总结出了薄互层的厚度、薄互层中单层厚度、子结构厚度、薄互层的互层数、入射子波的类型、主频、衰减系数以及地震勘探的采样率等参数对薄互层地震反射特征的影响规律，由此得出以下几点看法和结论

The invention discloses a high-voltage P-type metal oxide semiconductor, including a P-type substrate, a deep N-well is arranged on the P-type substrate, an N-well drift region and a P-type drift region are arranged on the deep N-well, an N-type contact hole, a P-type source and a field oxide layer are arranged on the N-well, a P-type drain and the field oxide layer are arranged on the P-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the N-well is smaller than the grid oxide layer part which is positioned above the P-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly.

本发明公开一种高压P型金属氧化物半导体管，包括P型衬底，在P型衬底上设有深N型阱，在深N型阱上设有N型阱和P型漂移区，在N型阱上设有N型接触孔、P型源及场氧化层，在P型漂移区上设有P型漏及场氧化层，其特征在于位于N型阱上方的栅氧化层部分的厚度小于位于P型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层。

The invention discloses a high-voltage N-type metal oxide semiconductor, including a P-type substrate, a P-well drift region and an N-type drift region are arranged on the P-type substrate, a P-type contact hole, an N-type source and a field oxide layer are arranged on the P-well, an N-type drain and the filed oxide layer are arranged on the N-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the P-well is smaller than the grid oxide layer part which is positioned above the N-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly, a P-type impurity injection region is arranged in the P-well, and the P-type impurity injection region is positioned below the thin grid oxide layer.

本发明公开一种高压N型金属氧化物半导体管，包括P型衬底，在P型衬底上设有P型阱和N型漂移区，在P型阱上设有P型接触孔、N型源及场氧化层，在N型漂移区上设有N型漏及场氧化层，其特征在于位于P型阱上方的栅氧化层部分的厚度小于位于N型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层，在P型阱内设有P型杂质注入区且该P型杂质注入区位于薄栅氧化层的下面。

The SBT thin films with STO seeded layer on MFIS structure also appear prefer (115),(006) orientation and good crystallinity. The seeded layer of STO effectively resists the diffusion of Bi into Ir bottom electrode on MIM structure. The remanent polarization and leakage current density of Sr0.8Bi2.6Ta2O9+x thin films with STO seeded layers are significantly improved. In MFIS structure, the Sr0.8Bi2.6Ta2O9+x thin films with STO seeded layer are improved memory window and lead to lower leakage current at low voltage.

在具有STO晶种层基材上沉积之钽酸锶铋铁电薄膜於700℃淬火后，无论在MIM和MFIS结构上皆可得完美(115)方向之SBT结晶相，而STO的种晶层在MIM结构中确实可以有效的阻止铋原子扩散进入底电极，而降低漏电流，在MFIS结构中虽然得到一较小极化值，但由於铁电层所分配到的电场值反而因介电常数值降低而增加，因而得到较大的记忆窗。

This paper reports the karyotypes and thin layer isoelectric fccusing of the lens proteins of the sand boas from Dunhuang in Kansu,To- ksun and Kutun in Xinjiang.

本文在传统分类的基础上，又从染色体组型和晶状体蛋白聚焦电泳两方面，对分布于我国新疆和甘肃的沙蟒进行了研究。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。