查询词典 thin film

The case of electric field in the ferroelectric thin film is also considered.

说明了解析方法和计算过程是正确的。

In this case, the study of residual stress in ferroelectric thin film is very important.

因此铁电薄膜残余应力研究是关于铁电薄膜制备和性能研究的重要内容。

Along with the preparation technology of thin film development, ferroelectric material with high performance will appear constantly.

随着薄膜制备技术的发展，具有高性能的铁电材料还将不断出现。

The designs of structure and process of ferroelectric thin film micromachines were performed.

完成了铁电薄膜微机械的结构设计和工艺设计。

The reduction in switchable polarization of ferroelectric thin film is a major problem in ferroelectric memories.

铁电薄膜开关过程中可反转的极化随开关次数而降低，即铁电极化疲劳，这是铁电存储器应用中遇到的一个大问题。

Recently , TFT-LCD(Thin-Film Transistor Liquid crystal Display) is very important to major industries in Taiwan . In order to of satisfy the panel manufacture industry requiring large sizes of panel of cell processes , the conventional processes will be replaced with new technology of cell processes : One Drop Filling (Abbreviation:ODF) in the future . It is important to develop UV/Heat curable resin.In this investigations , we focused on Epoxy Acrylate Oligomer which are major components of ODF Sealant materials. The films are exposed to UV by different times , then the absorption peaks of ethylene and epoxy function group were idendifed with Attenuated Total Reflection-Fourier Transform Infrared Spectroscope to discuss curing ratio and reaction condition .

实验中，将探讨以紫外光和热双效硬化型树脂主要组成为寡聚物为主的ODF封胶材料，将其涂布在玻璃基板上形成薄膜，经过紫外光不同曝光时间及在恒温120℃下不同加热时间，再以衰减全反射式傅立叶转换红外线光谱仪(Attenuated Total Reflection-Fourier Transform Infrared Spectroscope)分析乙烯基和环氧基相关官能基在吸收图谱的变化，探讨在不同环境条件下ODF封胶材料硬化反应程度以及分析鉴定的要素。

These high power thin film terminators exhibit excellent high frequency characteristics.

这些高功率薄膜终端表现出优异的频率特性。

Ab initio molecular dynamics are used to study the diffusion mechanism of Li motion in copper thin film.

利用第一性原理分子动力学方法，研究了铜薄膜中锂离子的输运机制。

The homopolymer based on DHOT, PDHOT, had good solubility in many organic solvents, such as CHCl3, toluene, DCB, and had low band gaps of ca. 1.44 e.V in polymer solution and of ca. 1.42 e.V in the thin film.

以DHOT为主的均聚物，PDHOT，在许多有机溶剂中，如 CHCl3， toluene，DCB，呈现好的溶解性，并且具有低能隙之特性，能隙值在高分子溶液中约为1.44 e.V，在高分子薄膜中则约为

Here we review on the thin film chip calorimeter with controllable cooling, as well as heating rates up to 106 Ks^(-1) developed in the last 5 years at the Institute of Physics, Rostock University.

本论文主要介绍在过去的5年中，Rostock大学物理研究所发展起来的可控降温，以及升温速度可以达到10^6Ks^(-1)的薄膜芯片量热仪。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。