查询词典 thin film

Glancing angle deposition technique was used to deposit ZnS birefringent sculptured thin film by electron beam evaporation, and the oblique angle varied from 60° to 85°.

使用倾斜角沉积的电子束蒸发技术，制备了倾斜角度在60°～85°之间的ZnS双折射雕塑薄膜。

Tripp from the Department of Infectious Diseases at the University of Georgia, fabricated a hetero-structured silicon/gold nanorod array by the glancing angle deposition thin film method and functionalized it with anti-Salmonella antibodies and organic dye molecules.

Tripp博士通过双折射薄膜界面的方法而结构一个硅/金的异质结构的纳米棒列阵薄膜，并整合上抗沙门氏菌的抗体与组织染色分子发扬作用。

Tripp from the Department of Infectious Diseases at the University of Georgia, fabricated a hetero-structured silicon/gold nanorod array by the glancing angle deposition thin film method and functionalized it with anti- Salmonella antibodies and organic dye molecules.

Tripp 博士通过双折射薄膜界面的方法而构造一个硅/金的异质结构的纳米棒列阵薄膜，并整合上抗沙门氏菌的抗体与组织染色分子发挥作用。

We have fabricated and tested high-T SQUID planar gradiometer patterned from YBCO thin film deposited on a SrTiO3 bicrystal substrate.

我们在10×10平方公厘的SrTiO3双晶基片上，设计并制备了YBCO双晶结dc-SQUID一阶平面式梯度计。

The results of SRGID with different grazing incidence angles indicate that the crystal relaxation along the c-axis in ZnO thin film is not uniform.

通过计算得到ZnO薄膜的泊松比为0.504， ZnO薄膜与单晶6H-SiC衬底在平行于衬底表面a轴方向的实际晶格失配度为5.84%。

A linear relation between the logarithm of the differction intensities from the substrate InI and the grazing incidence angle function f was deduced, and the slope of the line is just the product of linear absorption coefficient of the thin film and its thickness.

导出了基体某一晶面的衍射强度的对数InI与掠入射角函数f之间的线性关系，发现该直线的斜率即为薄膜的线吸收系数与其厚度的乘积。

X-ray diffraction, reflection high energy electron diffraction and Phi scan of grazing incidence X-ray diffraction with synchrotron radiation were employed to investigate the structure properties of ZnO thin film.

利用X射线衍射，反射式高能电子衍射和同步辐射掠入射X射线衍射φ扫描等实验技术研究了ZnO薄膜的结构。

Meanwhile, thin film production also recorded solid growth, up 123% in 2008 to reach 0.89 GW.

同时，薄膜生产也稳步增长，增长123 ％， 2008年将达到0.89万千瓦。

In chapter 2, heat conduction and the output response of voltage of a ferroelectric thin film pixel are analyzed.

基于以上的简单综述，对于智能材料结构内的信号响应，以及相关的脱层问题都很值得研究。

AlN MSM devices were fabricated on AlN epitaxial thin film deposited on GaN/Sapphire substrates using helicon sputtering system at the low temperature of 300°C. The device characteristic was found to be improved by in situ metallization of Al electrodes. The extremely low dark current (1.39pA at 20V), the ideal factor (1.0125) and the Schottky barrier height (0.916eV) are superior compared to those of AlN MSM in the literature. When the device was illuminated by the 150W D2 lamp, the ratio of the induced photocurrent to dark current is more than 2 orders of magnitude. The illumination effect also shows the linear relationship between the radiation power and the photo current for the MSM devices, indicating the potential applicability for deep UV sensors.

氮化铝金属-半导体-金属光侦测器则是用In situ metallization制程，利用低温回旋溅镀法在氮化镓/蓝宝石基板上沉积之氮化铝，再直接溅镀金属铝作为指叉电极，比较目前文献制作出来的氮化铝MSM元件，可得到很好的元件金半接面之理想因子1.0125，算出萧特基能障高度为0.916eV，并有很低的暗电流为1.39 pA，提升了元件的特性，使用150 W氘灯入射，光暗电流差距可到两个order，且元件之光电流与入射光功率呈线性，显示所制作之氮化铝MSM元件，很适合针对深紫外光波段侦测。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。