查询词典 thin film

" The one hint of the future to be found among still familiar older senses of the word, such as "a thin skin or membranous coating" or "an abnormal thin coating on the cornea, is the sense of film used in photography, a sense referring to a coating of material, such as gelatin, that could substitute for a photographic plate or be used on a plate or on photographic paper.

在当中发现的对未来的提示仍然同这个词的旧有意思相近，例如"一层薄的皮或覆盖的薄膜"或"角膜上一种不正常的薄的覆盖物"，就是film 用于摄影的含义，意思指覆盖物，如胶，可以代替感光板或用于感光板上或在相纸之上。

The thin film semiconductor device has a thin film transistor 3 formed on a glass substrate 1 containing alkali metal.

该薄膜半导体器件具有在含有碱性金属的玻璃基片1上形成的薄膜晶体管3。

XRD shows: when the value of x is between 0.1 and 0.3, the alloying thin film remains the structure of hexagonal wurtzite and the angle of (002) diffraction peak becomes bigger as the value of X increases; The photoluminescence spectra at room temperature shows that the PL spectra of the alloying thin film is composed of the stronger UV emission band and weaker visible band, and UV emission peak will have the blue shift with the content of Mg increasing and the visible emission weakened.

XRD衍射测试表明：在0.1＜x＜0.3范围内，合金薄膜仍然保持氧化锌六角型纤锌矿结构，(002)衍射峰位随x的增大向大角度方向移动，在X≥0.3的范围内，合金薄膜的结构则为氧化锌和氧化镁的混合结构；室温光致发光谱表明：ZnMgO合金薄膜PL谱都是由较强的紫外发射带组成，且随着Mg含量的增加紫外发射峰位发生蓝移，同时可见发射增强。

The results of theoretical analysis and experiments indicate that in the frequency band of 10 to 3 000 MHz and voltage range of 0.1 to 2 V,the uncertainty is 0.25% to 0.7% and the confidence level is 99.73%. Metrology ; Voltage standard ; Bolovac ; Thin film bolometric bridge with resistance regulation network circuit ; Double thin film bolometer ; RF mount ; Uncertainty evaluation

在近期的技术改造[2]中，我们研制出电阻臂可变的自动平衡电桥，重新研制了双薄膜测热电阻，建立了射频电压自动校准系统，从而使该基准的计量性能有了很大提高，其主要技术指标如下：测量范围为0·1~2·0V；频率范围为10~3 000MHz；不确定度为0·25%~0·7%(k=3)；工作方式为自动测试。2工作原理和构成2.1工作原理射频电压基准是建立在功率替代原理的基础

A 125W UV lamp (365nm) was used as light source. The photoelectrochemical system consisted of three electrodes. As follows, Ti/TiO2 thin film was used as the working electrode, graphite electrode as the counter electrode and saturated calomel electrode as the reference electrode. Methyl orange was used as the objective substance. The photoelectrocatalytic degradation of Methyl orange on the Ti/TiO2 thin film was studied .The effects of some factors such as external bias potential, ventilation were also observed.

并以125W紫外线高压汞灯为光源，Ti/TiO2薄膜为工作电极，石墨电极为辅助电极，饱和甘汞电极为参比电极，建立了三电极的光电催化体系，甲基橙溶液为降解对象，并对其在Ti/TiO2薄膜电极上的光电催化降解进行了研究，观察外加电压、通空气等外加因素对甲基橙降解速率的影响。

The micro movement of deposited cluster and the microstructure evolution of thin film have been studied in dimension of atom-cluster in this paper. There are some important applications to do deeply research on the migration, coacervation and nucleation of atom cluster, to optimize the deposition process, to enhance the characteristics of thin film.

在原子尺度上揭示膜层形成初期粒子的微观变化过程及膜层微观结构的演化规律，对深入了解表面粒子的迁移、吸附和成核，对改进和优化薄膜生长工艺、提高薄膜质量、改善薄膜性质具有重要意义。

Fter preparing porous thin film by doctor blade, carbon counter electrode was prepared by sintering porous thin film at low-temperature.

bstract 以廉价的炭黑掺杂石墨粉，氯化聚乙酸乙烯醋为胶黏剂制成导电浆料，在柔性基底上用丝网印刷技术制备薄膜，低温热处理后即得碳对电极。

The work done previously is experiential. To this day, the researches on silicon nitride thin film prepared by PECVD stay initial stages, so it is necessary to further develop PECVD. On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.

前人做的工作大多也都是经验性的，至今人们对PECVD 氮化硅薄膜的研究还很不成熟，尚处于研究探索的阶段，从而在理论上有必要对PECVD 法氮化硅薄膜做进一步的研究；与此同时，制备高质量的栅绝缘层用氮化硅薄膜也是制备高性能薄膜晶体管这一课题的需要。

In the TFT ARRAY need multi thin film process.The first gate electrode metal is very important about upper thin film coverage.

中文摘要在TFT ARRAY制程中需经历多次成膜，而第一层之闸极金属对后续绝缘层或金属层之覆盖性相对重要。

Based on the thin film investigate,thin film transorformer and inductor have been developed.

本文报道了高性能软磁薄膜的溅射工艺，纳米晶化和性能改进的途径。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。