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thin film相关的网络例句

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After this dissolusion of cover-layer, the micro-holes with nanometer diameter appear and a thin film of AlPO〓·XH〓O on the porous alumite film is formed which can be found by using electronic diffraction technology.

电子衍射分析表明,经磷酸处理后,铝阳极氧化膜表面形成了一层AlPO〓·XH〓O薄膜。

The original WO〓 film showed no response to the visible-light excitation. However, VLP was observed from WO〓 thin-film after it had been cathodically polarized in KNO〓/propylene carbonate solution.

初始薄膜对可见光照射没有反应,但将其在KNO〓/碳酸丙烯酯电解质溶液中进行阴极极化产生微弱变色后,则会产生强烈响应,变为深蓝色。

Organic electroluminescent thin-film is a sort of the film which can transform electric energy into light energy.

有机电致发光薄膜是一种把施加的电能转化为光能的电能转化膜。

The LiTaO3 thin film was chosen as infrared sensing film and prepared by a sol-gel process using lithium acetate and tantalum ethoxide as starting materials. The fabrication process of device is discussed in details.

用醋酸锂和乙醇钽作为起始反应物,通过溶胶凝胶工艺生成了对红外敏感的钽酸锂薄膜,并详细讨论了基于钽酸锂薄膜的红外探测器件制备工艺。

The contact angles of water and hexadecane on the resulting ultra thin film were measured so as to investigate the hydrophobic hydrophilic properties of the film.

结果表明:所制备的自组装膜的表面自由能很低,具有很好的疏水-疏油性,其对水的接触角高达 1 1 0°;二甲基-γ-全氟辛酰氧丙基硅烷组装膜可以降低基片的摩擦系数,而且在较低负荷下具有很好的耐磨性

In order to improve the fire safety and reliability of an explosive device, a butterfly metal film bridge was prepared by adopting a magnetron sputtering technology with a mask. The bridge surface was smeared by 15-20 mg lead styphnate. The current safety testing, antistatic testing and the bridge wire comparative testing were used to study its properties of safety and ignition. Infrared thermal imaging technology was used to verify the heat distribution of the thin film bridge.

为了提高火工品的安全性及点火可靠性,采用掩模法,利用磁控溅射技术制备了一种蝶形金属薄膜桥,在薄膜桥表面涂15~20 mg斯蒂芬酸铅,进行了安全电流试验、抗静电试验及与桥丝的对比试验,研究了其安全性能和点火性能,并利用红外热成像技术验证其发火时桥区的热分布。

The element Sb exists in many forms in the film: transpositional atoms and compounds such as Sb2O3, Zn7Sb2O14 etc. ZnO crysal grains grow in mixing directions. The lattice relaxation and content of second phases increase when more Sb is doped. The UVA absorption of doped ZnO thin film obviously increases. The ultraviolet absorption peak narrows, the absorption intensity increases, the absorption margin becomes steep and moves to shorter wavelength about 5 nm, and the visible absorption increases in some sort.

薄膜中Sb以多种形态存在:替位原子和化合物(Sb2O3、Zn7Sb2O14)等,ZnO呈混晶方式生长;随着Sb含量的增加,其引起的晶格畸变和次晶相的含量逐渐增加;掺杂薄膜在远紫外波段的吸收显著增强,UV吸收峰变窄,强度增大,吸收边变得陡峭且向短波方向移动达5nm,在Vis波段的吸收有所增强。

Based on consumption of evaporation extended film region responsible for transferring total heat,combination of energy and momentum conservation equation and consideration of effect of disjoining pressure and viscous force,the analytic solution of radial dryout point for thin film evaporation was presented.

假设热量全部通过蒸发扩展液膜区传递,联立能量守恒方程和动量守恒方程,考虑了脱离压力和粘性力的影响,建立了热管微槽蒸发器槽道侧壁面上薄液膜蒸发的径向干点位置的解析解。

Film cooling provides protection from excessive heat by introducing a thin film of coolant or propellant through orifices around the injector periphery or through manifolded orifices in the chamber wall near the injector or chamber throat region.

气膜冷却提供保护,从过多的热量通过引入薄膜的冷却剂或推进剂通过口周围的喷油器周边或通过manifolded开口在会议厅内的墙壁附近的喷油器或分庭喉咙地区。

The motive of this paper is to investigate the effect of processing parameters on the properties of silicon nitride and the coverage performance of insulator layer, and the effect of the film thickness of interface layer on the conduction current performance of thin film transistor.

本文旨在研究探索工艺参数对氮化硅薄膜的性能(如光禁带宽度、相对介电常数、折射率等)和钝化层氮化硅薄膜台阶覆盖性能的影响,以及栅界面层氮化硅薄膜厚度对薄膜晶体管导通电流性能的影响,制备性能优良的氮化硅薄膜。

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