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tetragonal相关的网络例句

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与 tetragonal 相关的网络例句 [注:此内容来源于网络,仅供参考]

The results show that the nanosized tin is β-tin and the tin crystal is a tetragonal lattice structure, the particle size of nanosized tin prepared in the polyglycol solution is smaller than that in the water, and the particles size is smaller than 100 nm.

结果表明,所制备的纳米锡为β-锡,四方晶系,粒度小于100 nm,聚乙二醇溶液中得到纳米锡的粒度比水溶液中小。

The results showed that with the increase of nitride partial pressure in the range of 2. 0~8. 0×10〓Pa, the hardness of NbN, TaN single layer films decreased, but the hardness of TiN films kept unchanged. The crystal structure of TaN films changed from the mixture of tetragonal β-Ta and faced-center cubic δ-TaN to hexagonal TaN and that of NbN films from FCC δ-NbN to hexagonal ε-NbN. The crystal structure of TiN films is FCC in all the range of partial pressure researched.

研究结果表明:在2.0~8.0×10〓pa的氮分压之间,随氮分压的升高,TaN和NbN薄膜硬度下降,而TiN薄膜的硬度值不随氮分压的变化而变化;TaN薄膜的相结构由低氮分压时的正方β-Ta和面心δ-TaN所组成的两相混合物过渡到六方TaN结构,NbN薄膜则由面心立方结构的δ-NbN逐渐过渡到六方结构ε-NbN,而TiN薄膜的晶体结构基本不随氮分压的变化而变化,均为面心立方结构。

Based on the instantaneous motion of the moving platforms, the uncertainty configuration conditions and simplified uncertainty configuration equations are obtained for the widely studied parallel manipulators, such as planar 3-DOF parallel manipulator, spherical 3-DOF parallel manipulator, 6-SPS triangular platform parallel manipulator, three-branch 6-DOF parallel manipulator, twotriangular-platform parallel manipulator, DELTA parallel manipulator, 5-DOF parallel manipulator, two-tetragonal-platform parallel manipulator, pentagonal platform parallel manipulator and Stewart platform parallel manipulator.

采用这一方法,根据国内外常用的并联机器人机构的形式,建立了平面3自由度并联机器人、球面3自由度并联机器人、三角平台并联机器人、三支链6自由度并联机器人、双三角平台并联机器人、DELTA并联机器人、5自由度并联机器人、双四角平台并联机器人、五角平台并联机器人和Stewart平台并联机器人的奇异位形条件方程,除了Stewart平台并联机器人外,这些条件方程均为低于6阶的行列式,机器人结构类型不同,其简化程度各不相同。

In order to study the changing process of Barium strontium titanate Ba(subscript xSr(subscript 1-x) TiO3, BST from cubic phase to the tetragonal phase with Ba doping and the ferroelectric characteristic of BST, the total energy of BST with different mole ratio of Ba/Sr when Ba doped was calculated and the fine structure determined, based on general gradient approximation, by means of ultrasoft pseudopotentials plane wave method.

为了研究钛酸锶(SrTiO3, ST)中随Ba的掺入,其晶体从顺电相到铁电相的变化过程及四方相钛酸锶钡Ba(下标 xSr(下标 1-x)TiO3, BST的铁电性。在广义梯度近似下,利用超软赝势平面波方法计算了不同Ba/Sr摩尔比BST的总能量,确定了BST的精细结构。

We obtain the "misfit strain-misfit strain" phase diagram and energy diagram for BST thin film grown on tetragonal base at room temperature.

得到了室温下生长在四方基底上的BST50/50薄膜的&失配应变—失配应变&相图和能量图。

We obtain the "misfit strain-misfit strain" phase diagram and energy diagram for BST thin film grown on tetragonal base at room temperature.

用朗道-德文希尔理论研究了非平衡双轴失配应变对单畴外延钛酸锶钡薄膜相变的影响,得到了室温下生长在四方基底上的BST50/50薄膜的&失配应变-失配应变&相图和能量图。

The fitting of XRD using the standard Rietveld technique indicates that the samples can be indexed by a tetragonal lattice with space group I4/mmm.

室温XRD测量表明所有掺杂的样品都是Bi-2223相,用Rietveld技术拟合得到所有样品是四方结构的,空间群是14/mmm。

The electron paramagnetic resonance parameters g factors g(subscript //), g(subscript ⊥) and the hyperfine structure constants A(subscript //) and A(subscript ⊥) for the tetragonal KTaO3:Cu(superscript 2+) crystal are theoretically studied in this work.

用基团模型的3d^9离子在四角对称下的高阶微扰公式计算了KTaO3晶体中Cu(上标 2+)杂质中心的g因子g,g和超精细结构常数A和A。

On the basis of the perturbation formulae of the g-factors (fourth-order) and the hyperfine structure constants (third-order) for a 3d^9 ion in tetragonal symmetry, the spin Hamiltonian parameters for the Cu(superscript 2+)-doped LaSrAlO4 crystal are theoretically investigated.

根据晶体场理论,利用3d^9离子在四角对称中自旋哈密顿参量g因子的四阶微扰公式以及超精细结构常数A因子的三阶微扰公式,对掺Cu(上标 2+)的LaSrAlO4晶体的自旋哈密顿参量作出了理论分析。

On the basis of the perturbation formulae of the g-factors (fourth-order) and the hyperfine structure constants (third-order) for a 3d9 ion in tetragonal symmetry, the spin Hamiltonian parameters for the Cu2+-doped LaSrAlO4 crystal are theoretically investigated.

根据晶体场理论,利用3d9离子在四角对称中自旋哈密顿参量g因子的四阶微扰公式以及超精细结构常数A因子的三阶微扰公式,对掺Cu2+的LaSrAlO4晶体的自旋哈密顿参量作出了理论分析。

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