查询词典 temperature coefficient of resistance

In addition, a negative temperature coefficient of resistance can be observed in Sb nanowire arrays with diameter of 40nm while applying a 7T magnetic field perpendicular to nanowire axis.

研究了电参数变换对Sb纳米线的结晶态、择优生长方向、晶体生长速度的影响，研究了不同直径的单晶Sb纳米线的获得条件，探讨了这种方法对其它金属纳米线生长的普适性，讨论了脉冲电沉积控制晶体生长的机理。

The temperature coefficient of resistance may be positive or negative.

电阻温度系数有正有负。

Especially since Haayman et al discovered the property of Positive Temperature Coefficient of Resistance of BaTiO〓 ceramics in 1955, a new field of their development and application was created.

特别是海曼等人发现BaTiO〓陶瓷的正温度系数特性以来开创了BaTiO〓陶瓷发展和应用的一个新领域。

E. , a positive temperature coefficient of resistance .

随烧结温度的升高，材料的电阻率均有降低，TiO〓加入量即TiN含量处于临界值附近（20％TiO〓）的材料降低幅度最大。

Vanadium oxide thin films are widely used in the field of uncooled IR detecting and imaging for its high temperature coefficient of resistance.

氧化钒薄膜由于具有高电阻温度系数，近年来被广泛应用于非制冷红外探测及红外成像领域。

The VO x(x.5) film has a negative temperature coefficient of resistance of (-1~-4)%K -1 ,and an activation energy of 0.078eV~0.110eV.

对不同温度退火后氧化钒薄膜在10～100℃范围内测定了薄层电阻随温度的变化，得到的电阻温度系数值为(-1～-4)%K-1。

It is found that CO2 laser irradiation results in a drsmiatic decrease in the resistivity and remarkable increases in the insulator-metal transition temperature T(subscript P and the temperature coefficient of resistance TCR.

与传统的高温退火类似，经CO2激光辐照后，样品的电阻率从1.3mΩ？cm下降到0.5mΩ？cm，绝缘态－金属转变温度和温度电阻系数分别从255K和7.9%？

Two Chinese Invention Patents, which titled " Manganin thin film ultra-high pressure sensors" and "Preparation method of manganin thin films with low temperature coefficient of resistance", have been applied based on the above original work of this thesis.

以上第l～3创新点及第5创新点已经分别申请了两项中国发明专利："薄膜式锰铜超高压力传感器"和"低电阻温度系数锰铜薄膜的制备方法"。

Vanadium oxide thin films deposited on slide glass substrates are prepared by facing-target magnetron sputtering.The effect of sputtering conditions on temperature coefficient of resistance is analyzed by orthogonal experiment,and the optimum process recipes are achieved,including Ar∶O2=48∶0.4,gas pressure is 2 Pa,substrate temperature is 27 ℃,sputtering power is 180 W.

利用对靶磁控溅射法在玻璃基片上制备VOx薄膜，采用正交实验方法研究了镀膜条件对VOx薄膜电阻温度系数的影响，得到优化的镀膜工艺参数，主要包括Ar∶O2为48∶0.4、工作压力恒定为2 Pa、基底的温度为室温27℃、溅射功率保持在180W，在此基础上，进行不同温度条件的真空退火，得到薄膜TCR在-2.5%~-4.5%范围。

Two Chinese Invention Patents, which titled " Manganin thin film ultra-high pressure sensors" and "Preparation method of manganin thin films with low temperature coefficient of resistance", have been applied based on the above original work of this thesis.

以上第l～3创新点及第5创新点已经分别申请了两项中国发明专利：&薄膜式锰铜超高压力传感器&和&低电阻温度系数锰铜薄膜的制备方法&。

Neither the killing of Mr Zarqawi nor any breakthrough on the political front will stop the insurgency and the fratricidal murders in their tracks.

在对危险的南部地区访问时，他斥责什叶派民兵领导人对中央集权的挑衅行为。

In fact,I've got him on the satellite mobile right now.

实际上 我们已接通卫星可视电话了