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temperature coefficient of resistance相关的网络例句

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与 temperature coefficient of resistance 相关的网络例句 [注:此内容来源于网络,仅供参考]

Thermochromic properties of vanadium dioxide thin films are applied to solar energy materials, photoeletric switch and bolometer materials for the uncooled microbolometers due to their high temperature coefficient of resistance at room temperature.

中文摘要具热致变特性之VO2薄膜因在室温附近有明显的相转变现象,同时发生光电性质的急遽的转变,且在室温之下有较高的电阻温度系数,所以在一系列氧化钒化合物中格外被受瞩目;VO2因这些性质而被广泛应用於太阳能控制材料、电学开关、光学开关及非冷却型辐射热感测器等半导体元件之中。

The temperature coefficient of resistance with tempering temperature and its relationship with non- crystallinity was studied.

研究了这一合金薄膜电阻温度系数TCR随热处理温度的变化以及它与非晶度的关系。

Heat treatment is generally performed by heating to a temperature below 482/538°C (900/1000°F) to obtain a zero temperature coefficient of resistance.

通常的热处理是加热到482/538°C (900/1000°F)以下以得到温度电阻系数为零的指标。

Then,the influences of the argon pressure,substrate temperature,sputtering power,and the annealing temperature on the temperature coefficient of resistance for the sensor is studied.

结合工艺与测试实验,系统地分析了氩气压强、衬底温度、溅射功率、退火温度等工艺参数对电阻温度系数的影响规律。

Thermistors are temperature depender resistors and "PTC" stands for postive Temperature coefficient of resistance.

PTC(Positive Tempperature Coeffcent热敏电阻陶瓷是一类具有正的温度系数的半导体功能陶瓷。

The resistivity, squared resistance and temperature coefficient of resistance in hydrogenated silicon film decrease with the increasing of boron doping concentration.

搭建了半导体噪声测试系统,对非晶、微晶和多形三种氢化硅薄膜的1/f噪声测试分析说明薄膜的晶化使得薄膜结构的有序度更高,晶化降低了薄膜的1/f噪声。

The resistivity of the polysilicon films could be controlled under different dopant concentration and different anneal temperature. The changes of resistance with the temperature were measured. The temperature coefficient of resistance value was about 1‰ when the boron concentration was 5X 10 /cm and the anneal temperature was 900℃.

2制作了不同掺硼浓度和退火温度的多晶硅电阻,测试了阻值随温度的变化,在掺硼浓度和退火温度分别为5×10~(14)/cm~2和900℃时得到了接近1‰的TCR值。

The results show that increasing the solids loading of slurry up to 45% allows minimizing deformation of green sheets during drying and sintering process effectively. When the content of monomers in shurry is 2%-4%, and the content of plasticizer in shurry is 3%-6%, green sheets with good strength and flexibility are obtained. The microstructures and the electric characteristics of PTCR chip thermistors were investigated. A five-layer chip PTCR thermistor with room resistance of 0.8Ω, temperature coefficient of resistance of 13.40%/℃, and ratio of maximum to minimum of resistance larger than 10^5 is successfully fabricated.

研究表明:浆料固相体积分数对坯体的乾燥及烧结行为有较大影响,当浆料固相体积分数在45%以上时,可有效避免制品乾燥和烧结过程中收缩过大而产生的变形开裂缺陷;当有机单体的质量分数为2%~4%,丙三醇的体积分数为3%~6%时,可获得有一定强度和柔韧性的生坯;研究了注凝成型PTCR陶瓷的微观结构及陶瓷元件的PTCR性能,成功地制备了层数为5、室温电阻为0.8Ω、电阻温度系数为13.40%/℃、升阻比大於10^5的多层片式PTCR元件。

The results show that increasing the solids loading of slurry up to 45% allows minimizing deformation of green sheets during drying and sintering process effectively. When the content of monomers in shurry is 2%-4%, and the content of plasticizer in shurry is 3%-6%, green sheets with good strength and flexibility are obtained. The microstructures and the electric characteristics of PTCR chip thermistors were investigated. A five-layer chip PTCR thermistor with room resistance of 0.8 Ω, temperature coefficient of resistance of 13.40%/℃, and ratio of maximum to minimum of resistance larger than 105 is successfully fabricated.

研究表明:浆料固相体积分数对坯体的干燥及烧结行为有较大影响,当浆料固相体积分数在45%以上时,可有效避免制品干燥和烧结过程中收缩过大而产生的变形开裂缺陷;当有机单体的质量分数为2%~4%,丙三醇的体积分数为3%~6%时,可获得有一定强度和柔韧性的生坯;研究了注凝成型PTCR陶瓷的微观结构及陶瓷元件的PTCR性能,成功地制备了层数为5、室温电阻为0.8 Ω、电阻温度系数为13.40%/℃、升阻比大于105的多层片式PTCR元件。

A new making process of PTC small sensors is introduced and technological focal points in operations are detailed PTC small sensors (2 mm×2 mm×0 3 mm)with Curie temperature 120 ℃,resistivity at room temperature about 100 ohm·cm, temperature coefficient of resistance above 15%℃-1 ,rate of rise of resistivity ρ max /ρ min above 10 3 and time constant below 2 seconds have been made by use of new technology of isohydraulic formation, chip cut and scratch.

介绍了一种新的微型PTC元件的制造工艺,并对各个工序的技术重点做了详细阐述。作者采用等静压成型和切片、划片新工艺制成2mm×2mm×0.3mm微型PTC元件,其居里温度为120℃,室温电阻率为100Ω·cm,升阻比ρmax/ρmin大于103,电阻温度系数α≥15%℃-1,时间常数小于2s。

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