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When the temperature of a substrate is 250 DEG to 650 DEG C, the proportion of antimony doping to ZnO is controlled by adjusting the carrier gas flow rate of antimony metallorganic and zinc metallorganic to grow p type ZnO.

在衬底温度为250℃～650℃时，通过调节锑的金属有机物与锌的金属有机物源的载气流量来控制锑掺入ZnO的比例进行p型ZnO的生长。

The experimental results show that the metallurgically bond was formed between the coating and substrate.

结果显示涂层和基体之间形成冶金结合，XRD显示主要的相是γ-Ni周溶体，以及Fe2B、Fe3B相和M23C6、M7C3相。

The experimental results indicate that on the condition of Ni/C ,Zr added,the clad layers are metallurgically bonded to the substrate with fine shape and free of pores and cracks.

在楔横轧模具钢55Mn表面采用同轴送粉CO2激光熔覆WE—TiCp／镍基合金复合粉末，在增碳、锆条件下可获得成形好、无裂纹、与基体冶金结合的熔覆层。

The coatings formed on Q235 steel possess microcrystalline structure, with a thickness about 100 m. The micro-crystal line structure is achieved due to the high cooling rate during deposition. The quality of the coatings is enhanced by using Ar to protect samples from oxidation. The coatings are metallurgically bonded to the substrate without obvious interface.

采用振动式电脉冲沉积技术沉积涂层时，铝电极与工件瞬时接触放电，可以达到很高的温度，从而形成了铁铝金属间化合物涂层，而且涂层与基体为冶金结合；涂层冷却速度很快，由此获得微晶结构涂层；流动的氩气可有效地保护涂层的质量。

The results indicate that the plasma clad cermet composite coating has a rapidly solidified fine microstructure consisting of7C3 primary particles uniformly distributed in the γ-Fe matrix and is metallurgically bonded to the Q235 steel substrate.

结果表明：涂层显微组织为7C3初生相均匀分布于γ-Fe基体上，具有快速凝固的特点，涂层与基材之间为完全冶金结合。

A Ni-Cu based cladding was thus deposited, where the powdered Ni1015 was provided for the laser cladding process to form a smooth surface layer bonded metallurgically with Cu substrate, whose grain-refining microstructure is homogeneous, compact, void-free and crack-free.

用5 kW CO2激光器，通过优化激光工艺参数，在结晶器用铜合金表面预置添加SiC晶须的镍基自熔合金(Ni1015)粉，制备出表面平整、组织均匀致密、无气孔和裂纹等缺陷、与基体为冶金结合的Ni-Cu激光熔覆层。

High quality cubic-phase InGaN has been grown on GaAs (001) substrate by metalorganic chemical vapor deposition.

利用LP-MOCVD技术在GaAs(001)衬底上生长了高质量的立方相InGaN外延层。

A high temperature AlN template was grown on sapphire substrate by metalorganic chemical vapor deposition.

我们通过金属有机化合物气相沉积系统在蓝宝石衬底上外延生长了高温AlN模板及后续生长的AlGaN外延层的研究。

High quality GaN is grown on GaN substrate with stripe pattern by metalorganic chemical vapor deposition by means of epitaxial lateral overgrowth.

采用侧向外延方法，在制作了条形掩膜图形的GaN衬底上用MOCVD生长高质量GaN。

Direct growth of GaN films on Si(001) substrate at low temperatures (620～720℃) by electron cyclotron resonance microwave plasma enhanced metalorganic chemical vapor deposition.The crystalline phase structures of the films are investigated.

研究了用电子回旋共振等离子体增强金属有机物化学气相沉积技术在Si(001)衬底上，低温(620～720℃)下GaN薄膜的直接外延生长及晶相结构。

And Pharaoh spoke to Joseph, saying, Your father and your brothers have come to you.

47：5 法老对约瑟说，你父亲和你弟兄们到你这里来了。

Additionally, the approximate flattening of surface strip using lines linking midpoints on perpendicular lines between geodesic curves and the unconditional extreme value method are discussed.

提出了用测地线方程、曲面上两点间短程线来计算膜结构曲面测地线的方法，同时，采用测地线间垂线的中点连线和用无约束极值法进行空间条状曲面近似展开的分析。