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suboxide相关的网络例句

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与 suboxide 相关的网络例句 [注:此内容来源于网络,仅供参考]

Niobium suboxide anode is prepared with method similar to that for tantalum electrolytic capacitor and its electric property is investigated by electrolytic capacitor anode testing.

采用玛瑙研磨混料-还原焙烧-过筛工艺制备了低价铌氧化物粉末,用正交试验法及方差分析对工艺条件进行了优化,用XRD、SEM测试方法对产物物相、微观形貌进行了研究;按与钽电解电容器相似的工艺将低价铌氧化物粉末制成了阳极,并采用电解电容器阳极测试方法对其电性能进行了研究。

For MOS capacitors, the saturation current is mainly attributed to the electron-hole pair recombination mechanism. But for MOS capacitors, the saturation current is mainly attributed to the electron-hole pair generation mechanism, and is also controlled by interface trap densities, bulk traps, and suboxide.

对於N型矽基板上的氧半电容而言,其饱和电主要为电子电对在界面及空乏区的合机制,但是对於P型矽基板上的氧半电容而言,其饱和电受控於空乏区内电子电之产生与表面陷阱电荷,矽基板内缺陷,还有次氧化层。

The optimal processing conditions are as follows: roasting temperature at 1 000℃, roasting time for 40 min, the ratio of NbH dosage to theoretic dosage at 1.1. The specific capacity of niobium suboxide of preparation by agate grind procedure is 69.50 mF·V·g-1, the loss is 11.25%, the leakage current is 1.8×10-4A·F-1·V-1, and the electrical properties are better than that of the national standard (GB/T 3136-1995) of FTa16-300 tantalum powder for capacitor.

用正交试验法及方差分析对玛瑙研磨工艺进行优化,得到制备低价铌氧化物最佳条件是:焙烧温度为1 000℃,焙烧时间为40 min, NbH用量与理论量之比为1.1,所制得的产物杂质含量低,比容为69.50mF·V·g-1,损耗为11.25%,漏电流为1.8×10-4A·F-1·V-1,其电性能指标高于FTa16—300电容器钽粉国家标准(GB/T 3136—1995)所规定的值。

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