查询词典 structure morphism

Two new concepts, named morphism attribute and morphism event were proposed. The problem of consistency maintenance when multi-resolution models were parallel implemented was researched and a new algorithm was proposed. Then the problem of interaction conflict in MRM was researched. To solve this problem, three methods were given, including mutex locking, conflict detecting and model-oriented method. The affection of morphism interaction to simulation result was analyzed and some basic principles to deal with this problem were given.

提出了同态属性和同态交互的概念；研究了多分辨率模型并发运行时的一致性维护问题，给出了多分辨率模型的一致性维护算法；研究了并发交互冲突的解决方法，包括：加锁方法、冲突检测法和面向模型的方法等；分析了同态交互对仿真结果的影响，给出了处理同态交互的基本原则。

We suppose that C is a category with involution *, a is a morphism of Category C, h and k are inversive symmetrical morphisms of category C. If there is a morphism x, satisfyingthen x is called a general Moore-Penrose inverse of a on morphism h and k .

设C是具有对合*的范畴，α是范畴C的态射，h，k为范畴C的可逆对称态射，如果存在一个态射x，使得则称x为α的关于h，k的广义Moore-Penrose逆，记为α_~+。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

The first part is preface, on the basis of expounding the background, the purpose, the meaning and the thinking of the thesis study, briefly introduce the research achievements of domestic and international urban spatial structure; the second part is summary, expatiate on the connotation, component, research span and space type of urban spatial structure; The third part is theory foundation, mainly introduce the three classical models of city spatial structure in the west country (concentric circles mode, fan-shaped mode and multi-core mode) and the relative city development theories (growth pole theory, dot-axis theory, core-fringe theory, metropolis circle theory and city space evolution theory); The fourth part is general situations of study region; The fifth part is the analysis of Lanzhou city spatial structure evolution, along the historical venation Of city development, on the basis of analyzing industrial structure change, focus on and sumup the characteristics of spatial development and form, meanwhile, analyze factors which influences the spatial development; The sixth part is the analysis of Lanzhou city spatial development trend, put forward the development models of Lanzhou city spatial structure from three space aspects(the core city, the city, region) in the future, they are group gobbet structure, fingers structure, circle structure; The seventh part is to mainly put forward the development strategies for the different spatial structure models.

第一部分为前言，在阐明论文研究背景、目的及意义、思路的基础上，简要介绍了国内外城市空间结构相关研究成果；第二部分为概述，对城市空间结构的内涵、组成要素、研究尺度及其空间类型作以介绍；第三部分为理论基础，主要是对西方城市空间结构的3大经典模型(同心圆模式、扇形模式和多核心模式)以及与本研究相关的城市空间发展理论(增长极理论、点轴理论、核心——边缘理论、都市圈理论和城市空间演化理论)的介绍；第四部分为研究区概况，主要是对研究区域范围的界定及其社会经济发展概况介绍；第五部分是兰州城市空间结构演化分析，顺着兰州城市发展的历史脉络，在分析产业结构变动的基础上，着重对城市空间发展及其形态特征进行归纳总结，并分析了空间发展的主要影响因素；第六部分是兰州城市空间发展趋势分析，从中心城市、市域、区域3个空间层面上提出未来兰州城市空间结构的不同模式，即组团结构、指状结构、圈层结构；第七部分是城市空间发展策略，针对不同的城市空间发展模式提出一些对策建议。

Engineering geological structure classification is divided into macro-, fine-, and microstructure. Macro-structures include alluvium predominated structure, multiple-binary-rhythm structure, thick boulder and gravel structure, saccate buried valley structure and tremendous composite structure, fine structures homogeneous structure, stuffed structure, porphyro-structure, and space frame structure, microstructures cemented, semi-cemented and loose texture.

利用第四纪构造与气候环境演变控制论的观点，在成因分类的基础上，对覆盖层进行了结构工程分类，按沉积相的不同组合特点分为冲积为主的结构、多重二元韵律结构、厚层漂卵石层结构、囊状槽谷结构、巨厚复合加积结构等五种类型；按颗粒组成和结合状态，分为均匀型、充填接触型、斑状型和架空型四种细观结构；按胶结成岩状态分为胶结、半胶结和松散三种微观结构。

We also analyze the mechanism of the initial zinc blende structure and wurtzite structure phase transition in II-VI and III-V compound materials. The results indicate that the transition of zinc blende structure to rocksalt structure due to "chair" structure transform, the transition of wurtzite structure to rocksalt structure due to "chair" and "boat" structure transform.

对II-VI族和III-V族初始相为闪锌矿或纤锌矿的压致结构相变机制进行的分析表明，闪锌矿结构到岩盐矿的相变是因为"椅式"结构的变化，纤锌矿结构到岩盐矿的相变是因为"椅式"和"船形"两种结构的变化。

Sedimentation anyslys of soil under the action of deadweight; 2 Sedimentation anyslys of structure in using; 3 Endogen force anyslys of structure in using; 4 Soil remolding type anyslys; 5 Homogenous flush works anyslys; 6 Anyslys of the structure sedimentation effects of different flushing amount at the same place; 7 Anyslys of the structure sedimentation effects of different flushing places; 8 Anyslys of the structure sedimentation effects of different horizontal flushing places; 9 Anyslys of the structure sedimentation effects of different vertical flushing places; Getting the different between the endogen force of common structure and that of slant structure.

对掏土纠偏过程做了以下9个方面的分析：1、土体在自重作用下的沉降分析； 2、建筑物在使用阶段的沉降分析； 3、建筑物在使用阶段的内力分析； 4、土体受扰动类型分析； 5、均匀冲水施工过程分析； 6、同一个地方冲水量大小不同对建筑物沉降影响分析； 7、不同沉井冲水对建筑物沉降影响分析； 8、进深不同的土层冲水对建筑物沉降影响分析； 9、不同埋深土体冲水对建筑物沉降影响分析。

The sedimentary process of debris flow which has fundamental dynamic mechanism of flowing and creeping formed mainly various flowing structures, such as half-ring flowline structure, divided-flowing structure, bag-shaped flowline structure, divided-flowing structure, bag-shaped flowine structure, loaded structure, multiple-layered structure, washed gravel bed and lenssoiled-bed structure.

以流动和蠕动为基本动力机制的泥石流堆积过程多形成各种定向的流动构造，例如，半环状流线构造，分流构造，袋状流线构造、载荷构造、多层状构造、冲刷砾石层和透镜状土层构造。

①Location of WD gene in Ch inese: Using pairwise linkage analysis and multipoint linkage analysis method, w e constructed a genetic map of DNA markers within D13q14.2-3 which refined the location of WD gene by restriction fragment length polymorphism and microsatellite polymorphism analysis;②Screen for mutations of WD gene in Chinese people: we detected the structure of 21 exons of WD ge ne in 45 patients from 39 pedigrees by PCR-SSCP(Single strand conformation poly morphism) and PCR-DNA sequencing technology, found a new mutation in exon 5 and nuclcotide sequence analysis showed it is a T insertion. We also conformed the Arg778Leu in exon 8, the highest frequence mutation point in Chinese people, wit h mutation rate 22.8%in total;③Carrier detection and presymptomatic diagnosi s of WD: Based on DNA recombination technology, we peformed successfully the gen e diagnosis in all individuals of 79 families with WD and built up a helpful spe cific enzyme cut method (PCR-Msp1) to detect the carrier and presympomatic patients in Chinese pe ople with WD.

①WD的基因定位研究：通过RFLP及微卫星多态性分析，应用两位点及多位点连锁软件，建立了中国人WD基因在D13q14.2-3区域的精细遗传连锁图谱，从而首次对中国人WD基因进行了精确定位；②WD基因突变研究：应用PCR-SSCP及DNA测序技术，对39个家系45名WD患者进行该致病基因的21个外显子突变筛选，发现WD基因5号外显子存在新的T插入突变，并证实中国人WD基因的突变热点为8号外显子，突变形式为Arg778Leu，其频率为22.8%；③WD的症状前诊断和杂合子检出：应用DNA重组技术对79个家系进行基因诊断，成功地进行了WD的症状前诊断和杂合子检出，并建立了WD的基因筛选的PCR-Msp 1酶切方法。

In mathematics, a morphism is an abstraction derived from structure-preserving mappings between two mathematical structures.

数学上，一个态射是两个数学结构之间保持结构的过程的一种抽象。

" I' d like to get some rough idea about music in the baroque ear, please."

请简要介绍一下巴罗克时期的音乐，好吗？

The results showed that the peak latency and pattern of SEPs elicited by electrical needling in LI-l1 and MP were similar. The amplitude of SEPs elicited by electrical needling in LI-l1 was higher than that of MP. There was no obvious SEPs generation when MM was electrical needling.

结果显示，电针刺激曲池穴和其邻近桡侧伸腕长肌运动点诱发性脑电波的波形和波峰时间是类似的，只是穴位的诱发性脑电波波幅较大，而电针刺激非穴位点并没有明显的诱发性脑电位。