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stoichiometrical相关的网络例句

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与 stoichiometrical 相关的网络例句 [注:此内容来源于网络,仅供参考]

N_2 gas added into IBED system during deposition could enhance N/Al ratio (from 0.53∶1 to 0.81∶1) near to stoichiometrical structure and improve dielectric properties of AlN thin films (breakdown field to about 1.42 MV/cm).

它具有许多特殊的物理性能,因此在许多方面已得到广泛应用或具有潜在的应用前景,尤其是作为绝缘材料应用于微电子领域[2~4]。

Therefore, the cultivation by combined fed-batch and L-cysteine addition was no doubt one of the most efficient approaches to improve both GSH production and intracellular GSH content, simultaneously.(10) The metabolic network of C. utilis WSH 02-08 for GSH biosynthesis, with glucose as the sole carbon source, was developed based on the stoichiometrical balance equations.

对于分批发酵来说,在L-半胱氨酸添加前后,GSH的合成量约各占总量的50%,对于流加发酵,最终GSH产量可以高达1150mg·L〓,胞内GSH含量达到3.32%,L-半胱氨酸添加后的平均比GSH合成速率更是高出110%。

The native oxides on CdSe surface could be reduced to elemental Selenium by a HF etching process. Bombardment using 100eV Ar〓 ions with a dosage of about 1×10〓 ions/cm〓 could remove all the elemental Selenium, which results in a normal stoichiometrical surface CdSe.

实验观测到HF刻蚀可以将CdSe半导体表面的Se氧化物还原为元素Se.100eV的Ar〓离子轰击可以除去HF刻蚀后在表面还原生成的元素Se,从而清洁样品表面,保证了表面CdSe的化学计量比。

Investigating the influences of processing parameters on the C/Si molar ratio of resulted nanosized SiC powders indicated that there was a direct pyrolytic reaction from DMS to SiC as well as the previous proposed two-step reaction. Under the optimized processing conditions, the silicon carbide powders of homogeneous particle size distribution, spherical shape and stoichiometrical C/Si molar ratio are obtained. The silicon carbide particle consists of β-SiC crystallite arranged randomly.

论文系统研究了工艺条件对产物粉体C/Si摩尔比、粉体颗粒尺寸和组成粉体的SiC微晶尺寸的影响;研究了粉体制备过程中可能发生的化学反应,提出了反应过程中除了分步进行的生成SiC的反应外,同时在高温区还存在一步完成的生成SiC的化学反应的观点;通过调整工艺参数,制备得到了粉体尺寸分布均匀、呈均匀球状、C/Si摩尔比符合化学计量比的颗粒尺寸为40nm的纳米SiC粉体。

The stoichiometrical preferred-orientation AlN (100) polycrystalline films were deposited on Si (100) wafers with DE=1.0 J*cm-2, PN2=13.333 kPa, Tsub=200℃, V=650 V, f=5 Hz, and dS-T=4 cm.

实验结果表明,当DE=1.0 J*cm-2,PN2=13.333 kPa,Tsub=200℃,V=650 V,f=5 Hz,dS-T=4 cm时,高质量的AlN薄膜被成功地沉积于Si(100)基片上。

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As she looked at Warrington's manly face, and dark, melancholy eyes, she had settled in her mind that he must have been the victim of an unhappy attachment.

每逢看到沃林顿那刚毅的脸,那乌黑、忧郁的眼睛,她便会相信,他一定作过不幸的爱情的受害者。

Maybe they'll disappear into a pothole.

也许他们将在壶穴里消失

But because of its youthful corporate culture—most people are hustled out of the door in their mid-40s—it had no one to send.

但是因为该公司年轻的企业文化——大多数员工在40来岁的时候都被请出公司——一时间没有好的人选。