查询词典 soi-disant

If I tried to go back out onto the secure tarmac area,I certainly would have been machine-gunned down, soI found a gracious airline employee who radioed the bus driver.

如果我回到安全停机坪，我可能会惨死在机器下面，但是我发现了一个亲切的空乘人员，他用无线电通知了司机。

The invention has the technical scheme that SIMOX or SIMNI technology in SOI process is locally used for perpendicular conducting power devices, while in conventional power JFET manufacture process, the buried local insulating layer is formed by insulating barrier layer growing, gate area doping window etching, ion injection and high temperature annealing.

其技术方案是：将SOI工艺中的SIMOX或SIMNI技术思路以局域化的方式用于纵向导电的功率器件，在制造功率JFET的常规工艺流程中，通过安排绝缘阻挡层生长、栅极区掺杂窗口刻蚀、离子注入和高温退火等四个工艺步骤，来实现隐埋局域绝缘层。

The excess nitrogen atoms in WNx films desorbs at temperatures below 766 ?aC. The excess nitrogen in WNx films can cause the effective work function lowering. Weak Fermi-level pinning effect is observed on HfO2 film. In this case, WNx/HfO2 gate stack can be applied to p-type fully-depletion SOI devices but WNx is not suitable to be meal gate of bulk p-type MOSFTEs.

氮化钨中过多的氮元素在温度低於766 oC便会析出，且过多的氮会导致氮化钨有效功函数下降，在氧化铪上会有轻微的费米栓效应，这种情形下，氮化钨可应用於p-型全空乏绝缘层上矽金氧半场效电晶体元件，但不适合当块材 p-型金氧半场效电晶体闸极。

The gettering effect of SIM OX intrinsic defects at BOX is much lower than that of the nanocavities. But no Cu are trapped at the rather perfect BOX interfaces of Smart-cut SOI.

在退火温度不高于1000℃时，Al沉淀在吸杂中占据主导地位，在更高的温度下，纳米空腔吸附的杂质量显著上升。

SOI-substrate ; inductance ; quality factor ; self-resonant-frequence

SOI衬底；电感量；品质因数；自谐振频率

Years (1873～1993) seasonal time series of SOI and NAOI areanalyzed by means of orthogonal wavelet transform.

用正交小波变换方法分析了近121年来季节的南方涛动指数与北大西洋涛动指数的演变特征，结果表明南方涛动指数最显著的变化是周期约为2～7年的年际变化，它们的方差贡献率为55.1%。1920年以前和1960年以后SO年际及年代际变化较强，其余时段较弱。

I'm a tone-deaf,soI do not want to sing in front of our classmates to fool of myself.

我五音不全，可不想在全班同学面前唱歌出洋相。

Experimental results showed that SOI compliant substrates could effectively reduce surface cracks and residual strain of the GaN epilayers.

AFM测试显示其表面粗糙度仅为0.6nm，PL光学性质测试表明柔性衬底上生长的GaN样品含有较少的杂质和缺陷。

The enterprise can be formed as annual production of polycrystalline silicon 1.3 billion, High-purity silicon tetrachloride 1 thousand tons,φ6"—φ12" polishing flake 2.3 million flake, Silicon extension flake 500 thousand flake, SOI silicon Flake 400 thousand flake, all sorts of zone melting grinding silicon flake 3 million flake, High-purity metal and its compound products 100-150 T/year.

十一五&末期，该企业将形成年产多晶硅130吨、高纯四氯化硅1000吨、φ6&—φ12抛光片230万片、硅外延片50万片、 SOI 硅片40万片、各类区熔硅磨片300万片、高纯金属及其化合物产品100—150T/年的生产能力，并将与新兴硅业、乐山安森美等企业形成完整的硅产品产业链和高纯金属产业基地。

SoI'd like to learn about this topic.

我想多了解一些这方面的情况。

But this is impossible, as long as it is engaging in a market economy, there are risks in any operation.

但是，这是不可能的，只要是搞市场经济，是有风险的任何行动。

We're on the same wavelength.

我们是同道中人。