查询词典 soi-disant

The interdigitated SOI DTMOSFET's, and SOI DTMOS-based invertors and ring oscillators are also designed. By fabricating these experimental devices and circuits, a set of submicron thin film SOI CMOS and SOI DTMOS process technology, which can meet the aerospace application requirements, has been developed.

为满足航天用微电子电路的抗辐射、高速、低功耗、高可靠的要求，开展了适于超低压工作的SOI DTMOSFET的研究工作，对DTMOS器件的微观工作机理进行了分析和讨论，揭示了SOI DTMOS器件电学性能优于常规SOI MOS器件的物理本质，以及DTMOS器件与电路在航天领域的巨大应用潜力。

A novel SOI high voltage device with a compound dielectric buried layer is proposed,and an analytical model for its electric field and potential is established.A unified criterion of RESURF condition for CDL SOI and a uniform dielectric buried layer SOI device is given.

提出复合介质埋层SOI(compound dielectric buried layer SOI，CDL SOI)高压器件新结构，建立其电场和电势分布的二维解析模型，给出CDL SOI和均匀介质埋层SOI器件的RESURF条件统一判据。

In this way,the vertical breakdown voltage of SOI LDMOS with 2μm thickness SOI layer can be improved by 43%.The on-state resistance is lowered by 24% because of the higher impurity concentration of the SOI surface.

采用这种方法制得的SOILDMOS的纵向击穿电压提高了43%，导通电阻降低了24%，这是因为它的表面浓度更高。

Fine lump of a woman all the same, the soi-disant townclerk Henry Campbell remarked, and plenty of her.

240"不管怎样，反正是个漂亮的大块头，"这位自封的市公所秘书长亨利。

The soi-disant Pipe Capital of the World, Saint Claude is largely a single-industry town.

圣徒-克劳德是当地一个主要的工业城市同时也是世界"造烟斗之都"。

I don't think bowing out is the answer--there are too many mushrooms who couldn't cut it, infesting the ranks of the soi-disant "classical" camp as it is.

不同等级的集训营自名"古典"，它们泛滥成灾，如雨后蘑菇，你都来不及采。

However, the implantation of silicon for SIMOX SOI materials increased the density of initial fixed oxide charge in the BOX, which would bring some negative effect on performance of SOI devices.

但是，注硅工艺在BOX层中引入了一定量的初始固定正电荷，对器件的特性带来了负面影响。

High voltage SOI devices investigated in this thesis are key devices for high voltage SOI SPIC.

本课题所研究的局域电荷槽结构和复合结构高压SOI器件是高压SOI SPIC中的关键器件，是国防科技重点实验室基金试点项目。

High voltage SOI lateral MOS devices studied in this paper are early application work for SOI SPIC.

本课题分析具有局域电荷槽结构的SOI LDMOS的纵向耐压机理，提出界面电荷耐压模型，这是迄今为止所见报道的高压SOI器件理想的新模型。

Lateral high-voltage SOI SOI high voltage integrated circuit device as the cornerstone, because of its lower vertical pressure limits its application.

SOI横向高压器件作为SOI高压集成电路的基石，由于其具有较低的纵向耐压限制了其应用。

But this is impossible, as long as it is engaging in a market economy, there are risks in any operation.

但是，这是不可能的，只要是搞市场经济，是有风险的任何行动。

We're on the same wavelength.

我们是同道中人。