查询词典 silicon

Silicon oil fit-into anterior chamber: two crystal eyes, intraocular tension has been controlled by releasing silicon oil , silicon oil fit-into one eye again, silicon oil filling exceed one month, useless of expectant treatment, after checking the reattachment of retina, doing the silicon oil dislodge from anterior chamber and vitreous cavity; there aphakia eyes by prone position and draping hypotensive drug: two iris ambitus excision aperture membrane occlusor eyes by lasering at 6 clock or perforating again., iris ambitus excision at 6 clock by lasing .one by iris ambitus excision affiliation anterior chamber plasty, acuity of vision has been elevated different degree after intraocular tension controlled.

硅油进入前房者：有晶体眼中2眼经前房放油眼压控制，其中1眼硅油再次进入前房，硅油填充亦超过1个月，经保守治疗无效，检查眼底视网膜复位后，同时行前房和玻璃体腔硅油取出术；无晶体眼中3眼经俯卧位加点降眼压药物，眼压控制，2眼虹膜周切孔膜闭者经过激光6点位打孔或重复打孔处理眼压控制，1眼作6点位周切孔重建，1眼行虹膜周切联合前房成形术，眼压控制。96眼眼压控制后，视力均有不同程度提高。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

Five novel torsion-mirror optical actuators including double-beam thickness differential structure with single torsional axis, double flexible folded-beam structure with single torsional axis, double-beam vertical torsion comb structure with single torsion axis, four-beam differential compound-micromirror structure with double torsional axis and the combined structure of the four basis forms above, are brought forward. All of these devices could be fabricated by the same silicon micromachining process we have developed. The deformation compensation design with local enhancement for the thin torsional beam which is the key structure of these devices is also put forward to improve the reliability. The three-dimension solid model and two-dimension reduced order model of the torsion-mirror optical actuator are established and then the numerical simulations for evaluating the device characteristics of the statics, dynamics, electrostatic field, mechanical and electrostatic coupling, fluid and solid coupling are carried out to optimize the structure design. Furthermore, three optical fibre clamping structures which could be integrated monolithicly are designed and analyzed to improve the optical coupling capability. 4. Three flexible process flows combined with bulk silicon micromachining and surface silicon micromachining are brought forward to fabricate these novel single-crystal silicon or polysilicon torsion-mirror optical actuators by using the same lithography masks for both SOI wafer and regular silicon wafer. A series of important process experiments are carried out to optimize the process parameters and the process flows. Some novel and typical process phenomena which occurred during the microfabrication are analyzed and then the corresponding solutions are put forward. 5. A MEMS dynamic testing system which exploit blur image synthetic technique, stroboscopic image matching technique, stroboscopic mirau microscopic interferometry technique and microscopic laser dopper vibrometer technique is set up to measure three-dimension and six-freedom micro motions of any MEMS devices with nanometer resolution.

在对硅微机械扭转镜光致动器的光机电特性系统地理论研究的基础上提出了硅微机械扭转镜光致动器的结构设计准则。3、提出了单轴双梁厚度差分结构、单轴双柔性折叠梁结构、单轴双梁垂直扭转梳齿结构、双轴四梁差动复合微镜结构以及以上四种基本结构组合后的衍生结构等五种工艺加工技术兼容的新型的硅微机械扭转镜光致动器，对器件关键结构薄厚度、高耐疲劳扭转梁进行了局部加强的变形补偿设计，建立了器件的三维实体模型以及两维降阶模型，对提出的新结构硅微机械扭转镜光致动器进行了系统的静力学、动力学、静电场、力电耦合和流体固体耦合的建模仿真与优化设计，同时设计并分析了三种可实现单芯片集成的弹性光纤定位夹紧结构。4、提出了组合体硅微加工技术与表面硅微加工技术、兼容同一套光刻版图、可分别基于SOI 晶片和普通Si 晶片、适应于制造提出的各种新结构单晶硅和多晶硅硅微机械扭转镜光致动器的三套柔性加工工艺流程，开展了一系列重要工艺步骤的单项工艺试验，对工艺流程与工艺参数进行了优化，针对加工过程中出现的具有普遍意义的典型工艺问题进行了讨论和分析，并提出了解决方法。5、创新性地将模糊图像合成技术、频闪图像匹配技术、频闪Mirau 显微干涉技术与显微激光多普勒测振技术有机结合，建立起了一套周期运动测量与瞬态运动测量相结合、单点运动测量与全视场运动测量相结合、满足不同MEMS 器件各种动态测试要求的集成的MEMS 三维六自由度微运动精密测量系统。

The invention discloses a method to integrate single CMOS with bulk silicon microelectromechanical system, its technical project: 1 forming isolating groove: adopting deep-groove etching, and SiO2 and polycrystal silicon filling to realize the insulation of MEMS structure and CMOS circuit; 2 making standard CMOS circuit; 3 using SiO2 and Si3N4 as mask, etching silicon on the back until exposing SiO2 at the bottom of the isolating groove, to complete the thickness control for MEMS silicon structure layer; 4 completing metalizing the CMOS circuit and masking the MEMS structure: MEMS structure region uses Al as mask and CMOS circuit region uses thick photoetching glue as mask, using DRIE to release silicon structure.

本发明公开了一种将单片CMOS与体硅微机械系统集成的方法，其技术方案为：1形成隔离槽：采用深槽刻蚀，SiO 2 和多晶硅填充，实现MEMS结构和CMOS电路的绝缘；2完成隔离槽后进行标准CMOS电路的加工；3用SiO 2 和Si 3 N 4 作掩膜，从背面腐蚀硅，直至暴露出隔离槽底部的SiO 2 ，完成MEMS硅结构层的厚度控制；4完成CMOS电路金属化和MEMS结构掩膜：MEMS结构区用铝作掩膜，CMOS电路区用厚光刻胶作掩膜，用DRIE释放硅结构。用本发明方法不仅获得了较大的质量块，而且用本发明较高的深宽比制作出的结构电容，同时实现了体硅微机械与CMOS电路的集成，显著提高MEMS传感器的精度和稳定性，具有前沿性和重要实用价值。

The chemistry behavior research of wollastonite indicated that the silicon-potassium fertilizer has a chemical active in organic acid.The factors affecting manurial effect of silicon-potassium fertilizer are not only soil pH and desilicification,but also content and type of organ in the soil.Wollastonite chemistry behavior indicates that silicic acid can be dissolved out from silicon-potassium fertilizer in chlorhydric acid solution if pH of solution is not smaller than 2. The drop of apparent density,increase of DBP sorptive rate and specific surface for leavings indicate that hydrated silicon oxide is polyporous,and those mineralogic feature presignify that silicon-potassium fertilizer has a role of conservation of both Moisture and Fertility and improving soil structure.After active ingredient releasing,silicon-potassium fertilizer leaves half the substance (non-active ingredient)in soil.

熟料单矿物在酸溶液中的化学行为研究表明，硅钾肥矿物在有机弱酸中的化学活性较好，影响硅钾肥肥效发挥的因素是土壤pH值和土壤的去硅化程度，还有土壤有机质的含量与种类；硅灰石在盐酸溶液中化学行为表明，在反应体系pH不小于2的情况下，硅钾肥矿物大量溶出硅酸根组分；溶解残余物表观密度降低、DBP吸着率和比表面积增加表明水合二氧化硅是以多孔形式存在，为硅钾肥具有保水保肥、改良土壤结构的提供了矿物学依据。

The growth mechanism of silver seed on silicon has been presented: at first, the silver monolayer and multilayer firstly grows onto silicon without fully covering the surface at the expense of silicon etching due to the silver seed attracting the electron from silicon, after that, the monolayer coalesces together, forming continuous grain film with some silver atoms diffusing into the silicon and the multilayer still grows thick simultaneously.

提出了银晶籽在硅表面的生长机理是：首先是在硅表面没有被完全覆盖的情况下，单层银晶籽生长的同时伴随有多层的生长，此后单层逐渐形成连续的薄膜，在单层晶籽层上多层薄膜逐渐增厚，并伴随有部分银原子向硅中的扩散。

In this dissertation,preparation and thermoelectric characterization of conventional silicon-based materials and devices have been studied, including amorphous silicon films, polycrystalline silicon germanium films and amorphous silicon thin-film-transistors. A novel MEMS-IC integration method based on porous silicon micromachining has been developed, which is used to fabricate resistive bolometers with a-Si and polySiGe films, and a-Si TFT-based room-temperature infrared detector pixels and 8×8 arrays with primary capability of thermal imaging have been reported for the first time.

本文深入系统地研究了a-Si薄膜、polySiGe薄膜和a-Si TFT等三种常规硅基材料和器件的制备方法和热电特性，开发了一套新型的基于多孔硅牺牲层技术的MEMS-IC集成工艺，利用该工艺成功地制作了a-Si和polySiGe薄膜电阻式测辐射热计，在国际上首次提出并实现了基于a-Si TFT的室温红外探测器单元与8×8阵列原型，器件初步具备了室温红外热成像的能力。

Organic silicon products can be divided into three kinds: organic silicon singles, organic silicon mid-body and organic silicon products. The key to organic silicon industry is to get goodquality organic silicon singles.

有机硅产品分有机硅单体、有机硅中间体、有机硅产品及制品三大类，进入有机硅行业的关键是取得质优的单体产品。

Silicon wafer with low silicon steel sheet of 2.8% below the high-silicon-silicon content was 2.8%-4.8%, both in actual use there is no strict boundaries, commonly used to create large-scale high-silicon electrical.

矽钢片低硅片含硅2.8％以下，高硅片含硅量为2.8％-4.8％，两者在实际使用中并无严格界限，常用高硅片制造大型电机。

After the project completion, it has 100,000 tons / year organic single silicon productive capability( accounted by the methyl chloride silicon hydride), 45,000 tons/ year organic silicon including 20,000 tons/year silicon oil, 10,000 tons/ year silicon rubber, 6,000 tons /year silicone, 6,000 tons/year silicon hydride resin acceptor, and 3,000 tons/year others.

项目建成后生产有机硅单体10万吨/年，生产有机硅产品4.5万吨/年，其中硅油20000吨/年，硅橡胶10000吨/年，硅树脂6000吨/年，硅烷偶联剂6000吨/年，其它3000吨/年。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。